Abstract: A circuit device includes a first switching circuit that has one end connected to an output node, and turns on and off according to a drive signal, a second switching circuit that is connected in series with an impedance element between another end of the first switching circuit and a node having a predetermined potential, and turns off and on complementarily with the first switching circuit, a comparator circuit that outputs an output signal indicating whether or not a potential of the other end of the first switching circuit is higher than a determination level, and a control circuit that controls a level of the drive signal based on the output signal of the comparator such that the switching element enters a non-conduction state.

Abstract: A circuit device includes a first switching circuit that has one end connected to an output node, and turns on and off according to a drive signal, a second switching circuit that is connected in series with an impedance element between another end of the first switching circuit and a node having a predetermined potential, and turns off and on complementarily with the first switching circuit, a comparator circuit that outputs an output signal indicating whether or not a potential of the other end of the first switching circuit is higher than a determination level, and a control circuit that controls a level of the drive signal based on the output signal of the comparator such that the switching element enters a non-conduction state.

Abstract: An output transistor of an output circuit that outputs a large current may have a partial fault, but such a partial fault may not be detected because the transistor is very large. To address this, the invention provides an output circuit in which one output transistor is divided into a plurality of transistors, and a plurality of pads that are connected correspondingly to the transistors are provided. Fault detection can be performed on the plurality of transistors by using each pad. At least some of the pads are connected to one same output terminal of the substrate or the like.

Abstract: A semiconductor device includes a P-channel DMOS transistor provided with an N-type gate electrode, a P-channel MOS transistor provided with a P-type gate electrode, and an N-channel MOS transistor provided with an N-type gate electrode. The N-type gate electrode of the P-channel DMOS transistor desirably has a first end portion that is located on a source side of the P-channel DMOS transistor, a second end portion that is located on a drain side of the P-channel DMOS transistor, and a P-type diffusion layer at the first end portion.

Abstract: An output transistor of an output circuit that outputs a large current may have a partial fault, but such a partial fault may not be detected because the transistor is very large. To address this, the invention provides an output circuit in which one output transistor is divided into a plurality of transistors, and a plurality of pads that are connected correspondingly to the transistors are provided. Fault detection can be performed on the plurality of transistors by using each pad. At least some of the pads are connected to one same output terminal of the substrate or the like.

Abstract: A semiconductor device includes a P-channel DMOS transistor provided with an N-type gate electrode, a P-channel MOS transistor provided with a P-type gate electrode, and an N-channel MOS transistor provided with an N-type gate electrode. The N-type gate electrode of the P-channel DMOS transistor desirably has a first end portion that is located on a source side of the P-channel DMOS transistor, a second end portion that is located on a drain side of the P-channel DMOS transistor, and a P-type diffusion layer at the first end portion.

Abstract: A semiconductor device includes: a semiconductor substrate having a first conductivity type; a well having a second conductivity type and provided inside the semiconductor substrate; a first impurity region having the first conductivity type and provided within the well; a second impurity region having the second conductivity type, provided inside the well and away from the first impurity region; and a third impurity region having a first conductivity type, provided surrounding the well and away from the second impurity region. In this semiconductor device, the well is formed to be deeper than the first impurity region, the second impurity region, and the third impurity region, in a thickness direction of the semiconductor substrate; and a minimum distance between the first impurity region and the second impurity region is smaller than a minimum distance between the second impurity region and the third impurity region.

Abstract: A method for manufacturing a semiconductor device is disclosed. The method includes: forming a LDMOS region, an offset drain MOS region, and a CMOS region; simultaneously forming a first well in the LDMOS region and the offset drain MOS region; simultaneously forming a second well in the first well of the LDMOS region and the CMOS region; and forming a second well in the CMOS region, wherein a depth of the first well is larger than a depth of the second well and the second well is a retrograde well formed by a high energy ion implantation method.

Abstract: A semiconductor device includes: a semiconductor substrate having a first conductivity type; a well having a second conductivity type and provided inside the semiconductor substrate; a first impurity region having the first conductivity type and provided within the well; a second impurity region having the second conductivity type, provided inside the well and away from the first impurity region; and a third impurity region having a first conductivity type, provided surrounding the well and away from the second impurity region. In this semiconductor device, the well is formed to be deeper than the first impurity region, the second impurity region, and the third impurity region, in a thickness direction of the semiconductor substrate; and a minimum distance between the first impurity region and the second impurity region is smaller than a minimum distance between the second impurity region and the third impurity region.

Abstract: A method for manufacturing a semiconductor device is disclosed. The method includes: forming a LDMOS region, an offset drain MOS region, and a CMOS region; simultaneously forming a first well in the LDMOS region and the offset drain MOS region; simultaneously forming a second well in the first well of the LDMOS region and the CMOS region; and forming a second well in the CMOS region, wherein a depth of the first well is larger than a depth of the second well and the second well is a retrograde well formed by a high energy ion implantation method.