Patents by Inventor Hideyuki Amada
Hideyuki Amada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11626524Abstract: A photoexcitable material includes: a solid solution of MN (where M is at least one of gallium, aluminum and indium) and ZnO, wherein the photoexcitable material includes 30 to 70 mol % ZnO and has a band gap energy of 2.20 eV or less.Type: GrantFiled: June 11, 2019Date of Patent: April 11, 2023Assignee: FUJITSU LIMITEDInventors: Hideyuki Amada, Fumiaki Kumasaka, Toshio Manabe, Toshihisa Anazawa, Yoshihiko Imanaka
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Patent number: 11322310Abstract: A photochemical electrode includes: an electrically conductive layer; and a photoexcitation material layer provided over the electrically conductive layer and including a photoexcitation material, wherein the photoexcitation material layer is one of a first photoexcitation material layer in which a potential of the conduction band minimum decreases from a second surface opposite to a first surface on the side of the electrically conductive layer toward the first surface and a second photoexcitation material layer in which a potential of the valence band maximum decreases from the second surface toward the first surface.Type: GrantFiled: June 16, 2020Date of Patent: May 3, 2022Assignee: FUJITSU LIMITEDInventors: Yoshihiko Imanaka, Hideyuki Amada, Toshio Manabe, Toshihisa Anazawa, Sachio Ido, Naoki Awaji
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Patent number: 11313046Abstract: A photochemical electrode includes: an electrically-conductive layer; and a photo-excited material layer including a photo-excited material provided over the electrically-conductive layer, wherein in a surface of the photo-excited material layer, a lattice plane having highest atomic density in a crystal structure of the photo-excited material is oriented in a surface direction of the surface of the photo-excited material layer.Type: GrantFiled: October 9, 2019Date of Patent: April 26, 2022Assignee: FUJITSU LIMITEDInventors: Yoshihiko Imanaka, Hideyuki Amada, Toshio Manabe, Toshihisa Anazawa, Sachio Ido, Naoki Awaji
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Publication number: 20200312575Abstract: A photochemical electrode includes: an electrically conductive layer; and a photoexcitation material layer provided over the electrically conductive layer and including a photoexcitation material, wherein the photoexcitation material layer is one of a first photoexcitation material layer in which a potential of the conduction band minimum decreases from a second surface opposite to a first surface on the side of the electrically conductive layer toward the first surface and a second photoexcitation material layer in which a potential of the valence band maximum decreases from the second surface toward the first surface.Type: ApplicationFiled: June 16, 2020Publication date: October 1, 2020Applicant: FUJITSU LIMITEDInventors: Yoshihiko IMANAKA, Hideyuki AMADA, Toshio MANABE, Toshihisa ANAZAWA, Sachio IDO, Naoki AWAJI
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Publication number: 20200040472Abstract: A photochemical electrode includes: an electrically-conductive layer; and a photo-excited material layer including a photo-excited material provided over the electrically-conductive layer, wherein in a surface of the photo-excited material layer, a lattice plane having highest atomic density in a crystal structure of the photo-excited material is oriented in a surface direction of the surface of the photo-excited material layer.Type: ApplicationFiled: October 9, 2019Publication date: February 6, 2020Applicant: FUJITSU LIMITEDInventors: Yoshihiko Imanaka, Hideyuki AMADA, Toshio MANABE, Toshihisa Anazawa, Sachio IDO, Naoki AWAJI
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Publication number: 20190296165Abstract: A photoexcitable material includes: a solid solution of MN (where M is at least one of gallium, aluminum and indium) and ZnO, wherein the photoexcitable material includes 30 to 70 mol % ZnO and has a band gap energy of 2.20 eV or less.Type: ApplicationFiled: June 11, 2019Publication date: September 26, 2019Applicant: FUJITSU LIMITEDInventors: Hideyuki AMADA, Fumiaki KUMASAKA, Toshio MANABE, Toshihisa Anazawa, Yoshihiko Imanaka
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Patent number: 10328419Abstract: A photoexcitation material includes: a wurtzite type solid solution crystal containing t gallium, zinc, nitrogen and oxygen, wherein a peak (A) of an existence ratio of nitrogen or oxygen which is a first adjacent atom of the gallium or zinc and a peak (B) of an existence ratio of gallium or zinc which is a second adjacent atom of the gallium or zinc satisfy a relational expression of A>B in a relationship between a distance and the existence ratio of the adjacent atom of the gallium or zinc, the relationship being obtained from an extended X-ray absorption fine structure analysis.Type: GrantFiled: June 13, 2018Date of Patent: June 25, 2019Assignee: FUJITSU LIMITEDInventors: Toshihisa Anazawa, Yoshihiko Imanaka, Toshio Manabe, Hideyuki Amada, Sachio Ido, Fumiaki Kumasaka, Naoki Awaji
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Publication number: 20190001258Abstract: A carbon-dioxide-reducing film includes, an electrically conductive material, a carbon-dioxide adsorbent, and a proton-permeable high-molecular-weight material. The electrically conductive material includes at least one selected from a group consisting of carbon nanotubes, nanographenes, and carbon paper.Type: ApplicationFiled: June 27, 2018Publication date: January 3, 2019Applicant: FUJITSU LIMITEDInventors: Toshio MANABE, Yoshihiko Imanaka, Toshihisa Anazawa, Hideyuki AMADA
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Publication number: 20180290130Abstract: A photoexcitation material includes: a wurtzite type solid solution crystal containing t gallium, zinc, nitrogen and oxygen, wherein a peak (A) of an existence ratio of nitrogen or oxygen which is a first adjacent atom of the gallium or zinc and a peak (B) of an existence ratio of gallium or zinc which is a second adjacent atom of the gallium or zinc satisfy a relational expression of A>B in a relationship between a distance and the existence ratio of the adjacent atom of the gallium or zinc, the relationship being obtained from an extended X-ray absorption fine structure analysis.Type: ApplicationFiled: June 13, 2018Publication date: October 11, 2018Applicant: FUJITSU LIMITEDInventors: Toshihisa Anazawa, Yoshihiko Imanaka, Toshio MANABE, Hideyuki AMADA, Sachio IDO, Fumiaki KUMASAKA, Naoki AWAJI
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Patent number: 10016746Abstract: A photoexcitation material includes: a wurtzite type solid solution crystal containing gallium, zinc, nitrogen and oxygen, wherein a peak (A) of an existence ratio of nitrogen or oxygen which is a first adjacent atom of the gallium or zinc and a peak (B) of an existence ratio of gallium or zinc which is a second adjacent atom of the gallium or zinc satisfy a relational expression of A>B in a relationship between a distance and the existence ratio of the adjacent atom of the gallium or zinc, the relationship being obtained from an extended X-ray absorption fine structure analysis.Type: GrantFiled: April 28, 2017Date of Patent: July 10, 2018Assignee: FUJITSU LIMITEDInventors: Toshihisa Anazawa, Yoshihiko Imanaka, Toshio Manabe, Hideyuki Amada, Sachio Ido, Fumiaki Kumasaka, Naoki Awaji
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Publication number: 20170341062Abstract: A photoexcitation material includes: a wurtzite type solid solution crystal containing gallium, zinc, nitrogen and oxygen, wherein a peak (A) of an existence ratio of nitrogen or oxygen which is a first adjacent atom of the gallium or zinc and a peak (B) of an existence ratio of gallium or zinc which is a second adjacent atom of the gallium or zinc satisfy a relational expression of A>B in a relationship between a distance and the existence ratio of the adjacent atom of the gallium or zinc, the relationship being obtained from an extended X-ray absorption fine structure analysis.Type: ApplicationFiled: April 28, 2017Publication date: November 30, 2017Applicant: FUJITSU LIMITEDInventors: Toshihisa Anazawa, Yoshihiko Imanaka, Toshio MANABE, Hideyuki AMADA, Sachio IDO, Fumiaki KUMASAKA, Naoki AWAJI
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Publication number: 20170345956Abstract: A photoexcitable material includes: a solid solution of MN (where M is at least one of gallium, aluminum and indium) and ZnO, wherein the photoexcitable material includes 30 to 70 mol % ZnO and has a band gap energy of 2.20 eV or less.Type: ApplicationFiled: April 28, 2017Publication date: November 30, 2017Applicant: FUJITSU LIMITEDInventors: Hideyuki AMADA, Fumiaki KUMASAKA, Toshio MANABE, Toshihisa Anazawa, Yoshihiko Imanaka
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Publication number: 20170314147Abstract: A photochemical electrode includes: an electrically-conductive layer; and a photo-excited material layer including a photo-excited material provided over the electrically-conductive layer, wherein in a surface of the photo-excited material layer, a lattice plane having highest atomic density in a crystal structure of the photo-excited material is oriented in a surface direction of the surface of the photo-excited material layer.Type: ApplicationFiled: March 23, 2017Publication date: November 2, 2017Applicant: FUJITSU LIMITEDInventors: Yoshihiko Imanaka, Hideyuki AMADA, Toshio MANABE, Toshihisa Anazawa, Sachio IDO, Naoki AWAJI
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Publication number: 20170316886Abstract: A photochemical electrode includes: an electrically conductive layer; and a photoexcitation material layer provided over the electrically conductive layer and including a photoexcitation material, wherein the photoexcitation material layer is one of a first photoexcitation material layer in which a potential of the conduction band minimum decreases from a second surface opposite to a first surface on the side of the electrically conductive layer toward the first surface and a second photoexcitation material layer in which a potential of the valence band maximum decreases from the second surface toward the first surface.Type: ApplicationFiled: April 14, 2017Publication date: November 2, 2017Applicant: FUJITSU LIMITEDInventors: Yoshihiko Imanaka, Hideyuki AMADA, Toshio MANABE, Toshihisa Anazawa, Sachio IDO, Naoki AWAJI
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Publication number: 20170077378Abstract: A thermoelectric generator includes: a substrate; a thermoelectric conversion film on the substrate; a thermally insulating film that covers the thermoelectric conversion film; a first heat transfer material that transfers a first heat above the thermally insulating film to a first portion of the thermoelectric conversion film; and a second heat transfer material that transfers a second heat below the substrate to a second portion of the thermoelectric conversion film, the second portion being separated from the first portion.Type: ApplicationFiled: September 8, 2016Publication date: March 16, 2017Applicant: FUJITSU LIMITEDInventors: John David Baniecki, Hideyuki AMADA, Yoshihiko Imanaka
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Patent number: 9082552Abstract: A method of manufacturing a capacitor includes forming, above a first metal foil, a first dielectric film of a ceramic material containing barium oxide by blowing dry ceramic particles to the first metal foil from a nozzle, forming, in the first dielectric film, a first via conductor connected to the first metal foil and a second via conductor connected to the first metal foil, forming, above the first dielectric film, a first electrode pattern connected to the first via conductor, and patterning the first metal foil to form a second electrode pattern connected to the second via conductor.Type: GrantFiled: October 16, 2012Date of Patent: July 14, 2015Assignee: FUJITSU LIMITEDInventors: Yoshihiko Imanaka, Hideyuki Amada, Fumiaki Kumasaka
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Patent number: 8957499Abstract: A method of manufacturing a capacitor includes forming a first ceramic film on a first base made of a metal, forming a second ceramic film on a second base made of a metal, forming a first copper electrode pattern and a first copper via-plug on a surface of one of the first and second ceramic films, the electrode pattern and the via-plug being separate from each other, bonding the first and second ceramic films together with the first electrode pattern and the via-plug therebetween, by applying a pulsed voltage between the first base and the second base while the first base and the second base are pressed so that the first ceramic film and the second ceramic film are pressed on each other, and removing the second base.Type: GrantFiled: September 8, 2011Date of Patent: February 17, 2015Assignee: Fujitsu LimitedInventors: Yoshihiko Imanaka, Hideyuki Amada, Fumiaki Kumasaka
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Patent number: 8467461Abstract: 2n data transfer signal lines are provided between transmitting and receiving sides of data on n signal lines in order to reduce power consumption required for a data transfer even if the number of bits of data to be transferred increases. The transmitting side has an encoder for outputting a signal of a low potential to one signal line and a signal of a high potential to the other signal lines among the 2n data transfer signal lines in response to an input of transfer data from the n signal lines. The receiving side has a decoder for outputting the similar data as the transfer data to n signal lines in response to inputs from the 2n data transfer signal lines.Type: GrantFiled: September 11, 2009Date of Patent: June 18, 2013Assignee: Fujitsu Semiconductor LimitedInventors: Hideyuki Amada, Tetsuo Ashizawa, Hideo Akiyoshi
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Patent number: 8404134Abstract: A method of manufacturing a electrode foil composed of a valve metal layer of a first valve metal and a metal foil of a second valve metal supporting the valve metal layer, the method includes coating fine particles of the first valve metal with a resin to form composite fine particles, forming the composite fine particles into an aerosol, jetting the aerosol to the metal foil in an atmosphere under a reduced pressure, depositing the composite fine particles onto the metal foil to form a aerosol deposition layer, and removing selectively the resin from the aerosol deposition layer to form the valve metal layer.Type: GrantFiled: February 6, 2009Date of Patent: March 26, 2013Assignee: Fujitsu LimitedInventors: Yoshihiko Imanaka, Hitoshi Yamada, Hideyuki Amada
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Publication number: 20120074521Abstract: A method of manufacturing a capacitor includes forming a first ceramic film on a first base made of a metal, forming a second ceramic film on a second base made of a metal, forming a first copper electrode pattern and a first copper via-plug on a surface of one of the first and second ceramic films, the electrode pattern and the via-plug being separate from each other, bonding the first and second ceramic films together with the first electrode pattern and the via-plug therebetween, by applying a pulsed voltage between the first base and the second base while the first base and the second base are pressed so that the first ceramic film and the second ceramic film are pressed on each other, and removing the second base.Type: ApplicationFiled: September 8, 2011Publication date: March 29, 2012Applicant: FUJITSU LIMITEDInventors: Yoshihiko Imanaka, Hideyuki Amada, Fumiaki Kumasaka