Abstract: The present invention may provide an inkjet head including a pressure chamber in which an aspect ratio of a partition wall is higher, the inkjet head less likely to be broken at the time of fabrication. An inkjet head of the present invention may include a diaphragm that vibrates by actuation of a piezoelectric body, and a pressure chamber a volume of which fluctuates by vibration of the diaphragm. In the pressure chamber, a region in contact with the diaphragm is divided from an adjacent pressure chamber or flow path by a partition wall formed of metal, and the partition wall has an aspect ratio of 1.3 or higher.

Abstract: This inkjet head comprises: a nozzle plate including a plurality of nozzles; a vibration plate including a pressure chamber to store ink to be ejected from the nozzle; a spacer plate containing a piezoelectric layer to apply pressure to the pressure chamber; a vibration board provided between the pressure chamber and the piezoelectric layer to transmit deformation of the piezoelectric layer to the pressure chamber; and an intermediate substrate between the pressure chamber plate and the nozzle plate, the intermediate substrate including a communication flow path that communicates with the nozzle and the pressure chamber. The nozzle plate includes: an individual circulation flow path provided for each of the plurality of nozzles to discharge ink; and a common circulation flow path into which a plurality of individual circulation flow paths merge.

Abstract: A method for manufacturing a piezoelectric actuator (21 a) as a piezoelectric element includes: an electrode forming step of forming a lower electrode (24) on a base body (27) including at least a support substrate (22); a film forming step of forming a piezoelectric thin film (25) on the lower electrode (24); a patterning step of patterning the piezoelectric thin film (25) by removing a part of the piezoelectric thin film (25); and a polishing step of polishing the support substrate (22). The polishing step is performed before the patterning step. In the film forming step, the piezoelectric thin film (25) is formed such that a ratio of the peak intensity of a pyrochlore phase to the sum of the peak intensities of (100) orientation, (110) orientation, and (111) orientation of a perovskite phase, obtained by 2?/? measurement of X-ray diffraction, is 100 ppm or less.

Abstract: A method for manufacturing a piezoelectric actuator (21a) as a piezoelectric element includes: an electrode forming step of forming a lower electrode (24) on a base body (27) including at least a support substrate (22); a film forming step of forming a piezoelectric thin film (25) on the lower electrode (24); a patterning step of patterning the piezoelectric thin film (25) by removing a part of the piezoelectric thin film (25); and a polishing step of polishing the support substrate (22). The polishing step is performed before the patterning step. In the film forming step, the piezoelectric thin film (25) is formed such that a ratio of the peak intensity of a pyrochlore phase to the sum of the peak intensities of (100) orientation, (110) orientation, and (iii) orientation of a perovskite phase, obtained by 2?/? measurement of X-ray diffraction, is 100 ppm or less.

Abstract: This inkjet head comprises: a nozzle plate including a plurality of nozzles; a vibration plate including a pressure chamber to store ink to be ejected from the nozzle; a spacer plate containing a piezoelectric layer to apply pressure to the pressure chamber; a vibration board provided between the pressure chamber and the piezoelectric layer to transmit deformation of the piezoelectric layer to the pressure chamber; and an intermediate substrate between the pressure chamber plate and the nozzle plate, the intermediate substrate including a communication flow path that communicates with the nozzle and the pressure chamber. The nozzle plate includes: an individual circulation flow path provided for each of the plurality of nozzles to discharge ink; and a common circulation flow path into which a plurality of individual circulation flow paths merge.

Abstract: Disclosed is a piezoelectric element wherein a lower electrode made of Pt, a buffer layer made of PLT, and a piezoelectric thin film to be a perovskite ferroelectric thin film are formed in this order on a substrate. The average crystal grain size of Pt forming the lower electrode is not smaller than 50 nm and not larger than 150 nm.

Abstract: In order to obtain a ferroelectric thin film having good crystallinity and realizing high piezoelectric properties, and a production method therefor, provided is a ferroelectric thin film constituting a dielectric material having a perovskite structure that comprises Zr and Ti formed on a substrate, wherein a layer having a Zr ratio that is smaller than a predetermined ratio and having good crystallinity and a layer that realizes good piezoelectric properties and has a Zr ratio that is about as great as the predetermined ratio are combined. A production method is also provided.

Abstract: Disclosed is a piezoelectric element wherein a lower electrode made of Pt, a buffer layer made of PLT, and a piezoelectric thin film to be a perovskite ferroelectric thin film are formed in this order on a substrate. The average crystal grain size of Pt forming the lower electrode is not smaller than 50 nm and not larger than 150 nm.

Abstract: In order to obtain a ferroelectric thin film having good crystallinity and realizing high piezoelectric properties, and a production method therefor, provided is a ferroelectric thin film constituting a dielectric material having a perovskite structure that comprises Zr and Ti formed on a substrate, wherein a layer having a Zr ratio that is smaller than a predetermined ratio and having good crystallinity and a layer that realizes good piezoelectric properties and has a Zr ratio that is about as great as the predetermined ratio are combined. A production method is also provided.

Abstract: A method of dividing a circuit pattern for creating complementary stencil masks corresponding to complementary patterns, the method comprising a step of dividing a circuit pattern into a plurality of complementary patterns including a first complementary pattern comprising a pattern of a cantilevered beam member having a support portion width W1 and a length L1, and a second complementary pattern comprising a pattern of a both end-supported beam member having a support portion width W2 and a length L2. The dividing of the circuit pattern is performed in a manner that a aspect ratio A1 (L1/W1) of the pattern of the cantilevered beam member is confined to not more than 100, and that a aspect ratio A2 (L2/W2) of the pattern of the both end-supported beam member is confined to not more than 150.

Abstract: A method of dividing a circuit pattern for creating complementary stencil masks corresponding to complementary patterns, the method comprising a step of dividing a circuit pattern into a plurality of complementary patterns including a first complementary pattern comprising a pattern of a cantilevered beam member having a support portion width W1 and a length L1, and a second complementary pattern comprising a pattern of a both end-supported beam member having a support portion width W2 and a length L2. The dividing of the circuit pattern is performed in a manner that a aspect ratio A1 (L1/W1) of the pattern of the cantilevered beam member is confined to not more than 100, and that a aspect ratio A2 (L2/W2) of the pattern of the both end-supported beam member is confined to not more than 150.

Abstract: A substrate for a transfer mask, which comprises a first silicon layer formed of monocrystalline silicon, a silicon oxide film formed on the first silicon layer and having a thickness ranging from 0.2 to 0.8 &mgr;m, and a second silicon layer formed on the silicon oxide film. A transfer mask which is manufactured by making use of this substrate is featured in that it is possible to prevent a transfer pattern from being cracked or destroyed due to stress from the silicon oxide film on the occasion of manufacturing the transfer mask, thereby providing a defect-free transfer mask.

Abstract: A substrate for a transfer mask, which comprises a first silicon layer formed of monocrystalline silicon, a silicon oxide film formed on the first silicon layer and having a thickness ranging from 0.2 to 0.8 &mgr;m, and a second silicon layer formed on the silicon oxide film. A transfer mask which is manufactured by making use of this substrate is featured in that it is possible to prevent a transfer pattern from being cracked or destroyed due to stress from the silicon oxide film on the occasion of manufacturing the transfer mask, thereby providing a defect-free transfer mask.