Abstract: Disclosed herein is an electrochemical energy storage device including a plurality of electrochemical cells in a containing space in a housing. The electrochemical energy storage device includes a first duct that runs parallel to the top or the bottom of the housing and one or more heat transfer members that are arranged in spaces between the electrochemical cells, where at least one of the heat transfer members protrudes into the first duct.

Abstract: Stub conductors are disposed so as to surround an outer periphery of a patch conductor and be spaced from the patch conductor with a gap positioned between the stub conductors and the patch conductor.

Abstract: This secondary battery includes a tubular battery body and a cover member containing the battery body. The cover member includes a tubular body at least covering a side surface of the battery body and a bottom which at least part of a bottom surface of the battery body contacts. The bottom includes an expansion expanded in a direction away from the bottom surface of the battery body, and an end surface of the expansion contacts the insulating plate. The area of the end surface of the expansion is smaller than the area of the bottom surface of the battery body.

Abstract: This secondary battery includes a tubular battery body and a cover member containing the battery body. The cover member includes a tubular body at least covering a side surface of the battery body and a bottom which at least part of a bottom surface of the battery body contacts. The bottom includes an expansion expanded in a direction away from the bottom surface of the battery body, and an end surface of the expansion contacts the insulating plate. The area of the end surface of the expansion is smaller than the area of the bottom surface of the battery body.

Abstract: In a semiconductor device provided with a plurality of standard cells each comprising an input terminal and MOS transistors, a diffused region having a substantially negligibly small resistance is formed in a semiconductor substrate, and the input terminal of the standard cell and gates of the MOS transistors are connected through the diffused region. Also, a diffused region is formed under the input terminal in the substrate, and the input terminal is connected to the diffused region. In a modification, another standard cell is formed by forming a diffused region and a metal layer connected to the diffused region on the substrate, and the another standard cell is connected to the input terminal.

Abstract: In a semiconductor device provided with a plurality of standard cells each comprising an input terminal and MOS transistors, a diffused region having a substantially negligibly small resistance is formed in a semiconductor substrate, and the input terminal of the standard cell and gates of the MOS transistors are connected through the diffused region. Also, a diffused region is formed under the input terminal in the substrate, and the input terminal is connected to the diffused region. In a modification, another standard cell is formed by forming a diffused region and a metal layer connected to the diffused region on the substrate, and the another standard cell is connected to the input terminal.