Patents by Inventor Hideyuki Hosoe

Hideyuki Hosoe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having particular impurity density characteristics
    Patent number: 8044488
    Abstract: The invention is based upon a semiconductor device where a high voltage bipolar transistor is manufactured on the same wafer with a high-speed bipolar transistor, and has a characteristic that the high-speed bipolar transistor and the high voltage bipolar transistor are formed on each epitaxial collector layer having the same thickness and are provided with a buried collector region formed in the same process and having the same impurity profile, the buried collector region exists immediately under a base of the high-speed bipolar transistor, no buried collector region and no SIC region exist immediately under a base of the high voltage bipolar transistor and distance between a base region and a collector plug region of the high voltage bipolar transistor is equal to or is longer than the similar distance of the high-speed bipolar transistor.
    Type: Grant
    Filed: June 23, 2008
    Date of Patent: October 25, 2011
    Assignees: Hitachi, Ltd., Hitachi Ulsi Systems Co., Ltd.
    Inventors: Mitsuru Arai, Shinichiro Wada, Hideyuki Hosoe
  • SEMICONDUCTOR DEVICE
    Publication number: 20090014838
    Abstract: The invention is based upon a semiconductor device where a high voltage bipolar transistor is manufactured on the same wafer with a high-speed bipolar transistor, and has a characteristic that the high-speed bipolar transistor and the high voltage bipolar transistor are formed on each epitaxial collector layer having the same thickness and are provided with a buried collector region formed in the same process and having the same impurity profile, the buried collector region exists immediately under a base of the high-speed bipolar transistor, no buried collector region and no SIC region exist immediately under a base of the high voltage bipolar transistor and distance between a base region and a collector plug region of the high voltage bipolar transistor is equal to or is longer than the similar distance of the high-speed bipolar transistor.
    Type: Application
    Filed: June 23, 2008
    Publication date: January 15, 2009
    Inventors: Mitsuru ARAI, Shinichiro Wada, Hideyuki Hosoe