Abstract: An anodic bonding method in which a semiconductor wafer and an inorganic insulating material are bonded together includes the steps of forming a first metallic thin film having a strong contact with the inorganic insulating material on one surface of the inorganic insulating material. Then, a second metallic thin film which is stable in air is formed on the first metallic thin film. The inorganic insulating material is placed on the semiconductor wafer so that a surface of the inorganic insulating material opposite the first metallic film is brought into contact with the semiconductor wafer. Then, a DC voltage is applied across the first and second metallic thin films as a cathode and the semiconductor wafer as an anode while the inorganic insulating material and semiconductor wafer are heated. Since the first metallic thin film contacts with the inorganic insulating material strongly and fills all fine gaps, voids can be prevented from occurring in bonded layers.