Patents by Inventor Hideyuki Ijiri
Hideyuki Ijiri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10333270Abstract: An optical module 1 according to an embodiment includes a plurality of laser diodes (LDs) 21 to 23, a multiplexing optical system 30 combining a plurality of laser beams from the respective plurality of LDs, and a package 10 accommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more than 550 nm. The package has an internal moisture content of not more than 3000 ppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.Type: GrantFiled: September 26, 2017Date of Patent: June 25, 2019Assignee: Sumitomo Electric Industries, Ltd.Inventors: Takashi Kyono, Hideyuki Ijiri, Takao Nakamura, Hiromi Nakanishi, Takatoshi Ikegami, Kuniaki Ishihara, Yohei Enya, Tetsuya Kumano
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Patent number: 10199795Abstract: An optical module 1 according to an embodiment includes a plurality of laser diodes (LDs) 21 to 23, a multiplexing optical system 30 combining a plurality of laser beams from the respective plurality of LDs, and a package 10 accommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more than 550 nm. The package has an internal moisture content of not more than 3000 ppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.Type: GrantFiled: September 26, 2017Date of Patent: February 5, 2019Assignee: Sumitomo Electric Industries, Ltd.Inventors: Takashi Kyono, Hideyuki Ijiri, Takao Nakamura, Hiromi Nakanishi, Takatoshi Ikegami, Kuniaki Ishihara, Yohei Enya, Tetsuya Kumano
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Patent number: 10024516Abstract: An optical module includes a transmitting member. The transmitting member is fixed to a cap member so as to cover a through-hole. On the assumption that the height of one point on a first surface in a state in which the transmitting member is detached from the cap member is zero and the direction toward the outside of the optical module is a positive direction, the amount of warp that is a difference between the displacement at the central point and the displacement at a standard point, on the first surface, corresponding to a reference point, on the projection image, away from a center of gravity by a particular distance is different between a first geodesic line and a second geodesic line, the displacement being a height of the one point in a direction of the optical axis in a state in which the transmitting member is fixed to the cap member. The transmitting member is joined to the cap member at the first surface or the second surface.Type: GrantFiled: July 7, 2017Date of Patent: July 17, 2018Assignee: Sumitomo Electric Industries, Ltd.Inventors: Takashi Kyono, Hiromi Nakanishi, Hideyuki Ijiri, Kaoru Shibata
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Publication number: 20180019568Abstract: An optical module 1 according to an embodiment includes a plurality of laser diodes (LDs) 21 to 23, a multiplexing optical system 30 combining a plurality of laser beams from the respective plurality of LDs, and a package 10 accommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more than 550 nm. The package has an internal moisture content of not more than 3000 ppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.Type: ApplicationFiled: September 26, 2017Publication date: January 18, 2018Inventors: Takashi Kyono, Hideyuki Ijiri, Takao Nakamura, Hiromi Nakanishi, Takatoshi Ikegami, Kuniaki Ishihara, Yohei Enya, Tetsuya Kumano
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Publication number: 20180010763Abstract: An optical module includes a transmitting member. The transmitting member is fixed to a cap member so as to cover a through-hole. On the assumption that the height of one point on a first surface in a state in which the transmitting member is detached from the cap member is zero and the direction toward the outside of the optical module is a positive direction, the amount of warp that is a difference between the displacement at the central point and the displacement at a standard point, on the first surface, corresponding to a reference point, on the projection image, away from a center of gravity by a particular distance is different between a first geodesic line and a second geodesic line, the displacement being a height of the one point in a direction of the optical axis in a state in which the transmitting member is fixed to the cap member. The transmitting member is joined to the cap member at the first surface or the second surface.Type: ApplicationFiled: July 7, 2017Publication date: January 11, 2018Inventors: Takashi Kyono, Hiromi Nakanishi, Hideyuki Ijiri, Kaoru Shibata
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Patent number: 9806494Abstract: An optical module 1 according to an embodiment includes a plurality of laser diodes (LDs) 21 to 23, a multiplexing optical system 30 combining a plurality of laser beams from the respective plurality of LDs, and a package 10 accommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the plurality of LDs and the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more than 550 nm. The package has an internal moisture content of not more than 3000 ppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.Type: GrantFiled: November 17, 2016Date of Patent: October 31, 2017Inventors: Takashi Kyono, Hideyuki Ijiri, Takao Nakamura, Hiromi Nakanishi, Takatoshi Ikegami, Kuniaki Ishihara, Yohei Enya, Tetsuya Kumano
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Publication number: 20170141531Abstract: An optical module 1 according to an embodiment includes a plurality of laser diodes (LDs) 21 to 23, a multiplexing optical system 30 combining a plurality of laser beams from the respective plurality of LDs, and a package 10 accommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the plurality of LDs and the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more than 550 nm. The package has an internal moisture content of not more than 3000 ppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.Type: ApplicationFiled: November 17, 2016Publication date: May 18, 2017Inventors: Takashi Kyono, Hideyuki Ijiri, Takao Nakamura, Hiromi Nakanishi, Takatoshi Ikegami, Kuniaki Ishihara, Yohei Enya, Tetsuya Kumano
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Patent number: 8772787Abstract: A GaN substrate is stored within an atmosphere in which the oxygen concentration is not greater than 15 vol. % and the water-vapor concentration is not greater than 20 g/m3. The GaN substrate (1) has a planar first principal face (1m), and in an arbitrary point (P) along the first principal face (1m) and separated 3 mm or more from the outer edge thereof, the GaN substrate's plane orientation has an off-inclination angle ?? of ?10° or more, 10° or less with respect to the plane orientation of an arbitrarily designated crystalline plane (1a) that is inclined 50° or more, 90° or less with respect to a plane (1c), being either the (0001) plane or the (000 1) plane, through the arbitrary point. This enables storing GaN substrates whose principal-face plane orientation is other than (0001) or (000 1), making available GaN substrates with which semiconductor devices of favorable properties can be manufactured.Type: GrantFiled: June 3, 2013Date of Patent: July 8, 2014Assignee: Sumitomo Electric Industries, Ltd.Inventors: Hideyuki Ijiri, Seiji Nakahata
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Publication number: 20130256696Abstract: A GaN substrate is stored within an atmosphere in which the oxygen concentration is not greater than 15 vol. % and the water-vapor concentration is not greater than 20 g/m3. The GaN substrate (1) has a planar first principal face (1m), and in an arbitrary point (P) along the first principal face (1m) and separated 3 mm or more from the outer edge thereof, the GaN substrate's plane orientation has an off-inclination angle ?? of ?10° or more, 10° or less with respect to the plane orientation of an arbitrarily designated crystalline plane (1a) that is inclined 50° or more, 90° or less with respect to a plane (1c), being either the (0001) plane or the (000 1) plane, through the arbitrary point. This enables storing GaN substrates whose principal-face plane orientation is other than (0001) or (000 1), making available GaN substrates with which semiconductor devices of favorable properties can be manufactured.Type: ApplicationFiled: June 3, 2013Publication date: October 3, 2013Inventors: Hideyuki Ijiri, Seiji Nakahata
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Publication number: 20130244406Abstract: A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.Type: ApplicationFiled: February 26, 2013Publication date: September 19, 2013Applicant: Sumitomo Electric Industries, Ltd.Inventors: Hitoshi KASAI, Takuji Okahisa, Shunsuke Fujita, Naoki Matsumoto, Hideyuki Ijiri, Fumitaka Sato, Kensaku Motoki, Seiji Nakahata, Koji Uematsu, Ryu Hirota
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Patent number: 8476158Abstract: A GaN substrate storage method of storing, within an atmosphere in which the oxygen concentration is not greater than 15 vol. % and the water-vapor concentration is not greater than 20 g/m3, a GaN substrate (1) having a planar first principal face (1m), and whose plane orientation in an arbitrary point (P) along the first principal face (1m) and separated 3 mm or more from the outer edge thereof has an off-inclination angle ?? of ?10° or more, 10° or less with respect to the plane orientation of an arbitrarily designated crystalline plane (1a) that is inclined 50° or more, 90° or less with respect to a plane (1c), being either the (0001) plane or the (000 1) plane, through the arbitrary point. In this way a method of storing GaN substrates whose principal-face plane orientation is other than (0001) or (000 1), with which semiconductor devices of favorable properties can be manufactured is made available.Type: GrantFiled: July 22, 2011Date of Patent: July 2, 2013Assignee: Sumitomo Electric Industries, Ltd.Inventors: Hideyuki Ijiri, Seiji Nakahata
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Patent number: 8404569Abstract: A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.Type: GrantFiled: November 18, 2010Date of Patent: March 26, 2013Assignee: Sumitomo Electric Industries, Ltd.Inventors: Hitoshi Kasai, Takuji Okahisa, Shunsuke Fujita, Naoki Matsumoto, Hideyuki Ijiri, Fumitaka Sato, Kensaku Motoki, Seiji Nakahata, Koji Uematsu, Ryu Hirota
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Patent number: 8227826Abstract: Affords a method of storing GaN substrates from which semiconductor devices of favorable properties can be manufactured, the stored substrates, and semiconductor devices and methods of manufacturing the semiconductor devices. In the GaN substrate storing method, a GaN substrate (1) is stored in an atmosphere having an oxygen concentration of 18 vol. % or less, and/or a water-vapor concentration of 12 g/m3 or less. Surface roughness Ra of a first principal face on, and roughness Ra of a second principal face on, the GaN substrate stored by the storing method are brought to no more than 20 nm and to no more than 20 ?m, respectively. In addition, the GaN substrates are rendered such that the principal faces form an off-axis angle with the (0001) plane of from 0.05° to 2° in the <1 100> direction, and from 0° to 1° in the <11 20> direction.Type: GrantFiled: September 7, 2010Date of Patent: July 24, 2012Assignee: Sumitomo Electric Industries, Ltd.Inventors: Hideyuki Ijiri, Seiji Nakahata
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Publication number: 20110278588Abstract: A GaN substrate storage method of storing, within an atmosphere in which the oxygen concentration is not greater than 15 vol. % and the water-vapor concentration is not greater than 20 g/m3, a GaN substrate (1) having a planar first principal face (1m), and whose plane orientation in an arbitrary point (P) along the first principal face (1m) and separated 3 mm or more from the outer edge thereof has an off-inclination angle ?? of ?10° or more, 10° or less with respect to the plane orientation of an arbitrarily designated crystalline plane (1a) that is inclined 50° or more, 90° or less with respect to a plane (1c), being either the (0001) plane or the (000 1) plane, through the arbitrary point. In this way a method of storing GaN substrates whose principal-face plane orientation is other than (0001) or (000 1), with which semiconductor devices of favorable properties can be manufactured is made available.Type: ApplicationFiled: July 22, 2011Publication date: November 17, 2011Applicant: Sumitomo Electric Industries, Ltd.Inventors: Hideyuki Ijiri, Seiji Nakahata
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Publication number: 20100326876Abstract: Affords a method of storing GaN substrates from which semiconductor devices of favorable properties can be manufactured, the stored substrates, and semiconductor devices and methods of manufacturing the semiconductor devices. In the GaN substrate storing method, a GaN substrate (1) is stored in an atmosphere having an oxygen concentration of 18 vol. % or less, and/or a water-vapor concentration of 12 g/m3 or less. Surface roughness Ra of a first principal face on, and roughness Ra of a second principal face on, the GaN substrate stored by the storing method are brought to no more than 20 nm and to no more than 20 ?m, respectively. In addition, the GaN substrates are rendered such that the principal faces form an off-axis angle with the (0001) plane of from 0.05° to 2° in the <1 100> direction, and from 0° to 1° in the <11 20> direction.Type: ApplicationFiled: September 7, 2010Publication date: December 30, 2010Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Hideyuki Ijiri, Seiji Nakahata
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Patent number: 7858502Abstract: A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.Type: GrantFiled: August 13, 2009Date of Patent: December 28, 2010Assignee: Sumitomo Electric Industries, Ltd.Inventors: Hitoshi Kasai, Takuji Okahisa, Shunsuke Fujita, Naoki Matsumoto, Hideyuki Ijiri, Fumitaka Sato, Kensaku Motoki, Seiji Nakahata, Koji Uematsu, Ryu Hirota
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Patent number: 7811908Abstract: Affords a method of storing GaN substrates from which semiconductor devices of favorable properties can be manufactured, the stored substrates, and semiconductor devices and methods of manufacturing the semiconductor devices. In the GaN substrate storing method, a GaN substrate (1) is stored in an atmosphere having an oxygen concentration of 18 vol. % or less, and/or a water-vapor concentration of 12 g/m3 or less. Surface roughness Ra of a first principal face on, and roughness Ra of a second principal face on, the GaN substrate stored by the storing method are brought to no more than 20 nm and to no more than 20 ?m, respectively. In addition, the GaN substrates are rendered such that the principal faces form an off-axis angle with the (0001) plane of from 0.05° to 2° in the <1 100> direction, and from 0° to 1° in the <11 20> direction.Type: GrantFiled: June 14, 2007Date of Patent: October 12, 2010Assignee: Sumitomo Electric Industries, Ltd.Inventors: Hideyuki Ijiri, Seiji Nakahata
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Publication number: 20100009526Abstract: A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.Type: ApplicationFiled: August 13, 2009Publication date: January 14, 2010Applicant: Sumitomo Electric Industries, Ltd.Inventors: Hitoshi KASAI, Takuji OKAHISA, Shunsuke FUJITA, Naoki MATSUMOTO, Hideyuki IJIRI, Fumitaka SATO, Kensaku MOTOKI, Seiji NAKAHATA, Koji UEMATSU, Ryu HIROTA
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Patent number: 7589000Abstract: A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.Type: GrantFiled: December 22, 2006Date of Patent: September 15, 2009Assignee: Sumitomo Electric Industries, Ltd.Inventors: Hitoshi Kasai, Takuji Okahisa, Shunsuke Fujita, Naoki Matsumoto, Hideyuki Ijiri, Fumitaka Sato, Kensaku Motoki, Seiji Nakahata, Koji Uematsu, Ryu Hirota
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Publication number: 20080003440Abstract: Affords a method of storing GaN substrates from which semiconductor devices of favorable properties can be manufactured, the stored substrates, and semiconductor devices and methods of manufacturing the semiconductor devices. In the GaN substrate storing method, a GaN substrate (1) is stored in an atmosphere having an oxygen concentration of 18 vol. % or less, and/or a water-vapor concentration of 12 g/m3 or less. Surface roughness Ra of a first principal face on, and roughness Ra of a second principal face on, the GaN substrate stored by the storing method are brought to no more than 20 nm and to no more than 20 ?m, respectively. In addition, the GaN substrates are rendered such that the principal faces form an off-axis angle with the (0001) plane of from 0.05° to 2° in the <1 100> direction, and from 0° to 1° in the <11 20> direction.Type: ApplicationFiled: June 14, 2007Publication date: January 3, 2008Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Hideyuki Ijiri, Seiji Nakahata