Abstract: A gas sensor includes: a channel layer in which a F-terminated GNR, a H-terminated GNR, and a F-terminated GNR whose edge portions are terminated with different modifying groups are bonded to each other; a source electrode formed on one end of the channel layer; and a drain electrode formed on the other end of the channel layer, in which a surface of the H-terminated GNR is exposed, and this exposed portion is a gas sensing part.

Abstract: A transistor includes a channel layer in which a plurality of graphene whose edge portions are terminated with modifying groups different from each other are bonded to each other; a gate electrode formed on the channel layer via a gate insulating film; and a source electrode and a drain electrode formed on the channel layer.

Abstract: An electronic device, includes: a graphene nanoribbon having a first graphene and a second graphene; a first electrode coupled to the first graphene; and a second electrode coupled to the second graphene, wherein the first graphene is terminated on an edge by a first terminal group and has a first polarity and the second graphene is terminated on an edge by a second terminal group different to the first terminal group and has a second polarity different from the first polarity.

Abstract: A simulation method is disclosed. A target structure is divided by a pattern of a unit structure for a stabilization calculation of an atomic arrangement. The stabilization calculation is conducted to calculate arrangement positions of atoms where a force between the atoms becomes stable, with respect to a structure in which one or more portions corresponding to the pattern of the unit structure are removed from the target structure. An added structure is created by adding one or more unit structures to the structure being stabilized by the stabilization calculation. The arrangement positions of the atoms in the target structure are stabilized by repeating the stabilization calculation with respect to the added structure.

Abstract: A gas sensor includes: a channel layer in which a F-terminated GNR, a H-terminated GNR, and a F-terminated GNR whose edge portions are terminated with different modifying groups are bonded to each other; a source electrode formed on one end of the channel layer; and a drain electrode formed on the other end of the channel layer, in which a surface of the H-terminated GNR is exposed, and this exposed portion is a gas sensing part.

Abstract: A transistor includes a channel layer in which a plurality of graphene whose edge portions are terminated with modifying groups different from each other are bonded to each other; a gate electrode formed on the channel layer via a gate insulating film; and a source electrode and a drain electrode formed on the channel layer.