Patents by Inventor Hideyuki Kurihara

Hideyuki Kurihara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220250908
    Abstract: Provided is a sulfur dioxide mixture that hardly corrodes metals. A sulfur dioxide mixture contains sulfur dioxide and water. The sulfur dioxide mixture is filled in a filling container in such a manner that a gas phase and a liquid phase exist, and the moisture concentration of the gas phase is from 0.005 mole ppm to less than 5,000 mole ppm.
    Type: Application
    Filed: February 17, 2021
    Publication date: August 11, 2022
    Applicant: SHOWA DENKO K.K.
    Inventors: Yosuke TANIMOTO, Hideyuki KURIHARA
  • Publication number: 20210309520
    Abstract: A nitrous oxide purification method includes a step of performing gas separation by introducing a mixed gas containing nitrous oxide into a gas separation membrane including a polymer material to cause nitrous oxide to selectively permeate the gas separation membrane.
    Type: Application
    Filed: September 12, 2019
    Publication date: October 7, 2021
    Applicant: SHOWA DENKO K.K.
    Inventor: Hideyuki KURIHARA
  • Publication number: 20210246040
    Abstract: There is provided a method of producing boron trichloride, in which boron trichloride with high purity can be produced in simple production steps, and blockage of a production line is inhibited.
    Type: Application
    Filed: June 4, 2019
    Publication date: August 12, 2021
    Applicant: SHOWA DENKO K.K.
    Inventors: Saki MOURI, Hideyuki KURIHARA
  • Publication number: 20210230010
    Abstract: There is provided a method of producing boron trichloride, in which damage to a reaction container is inhibited. The method of producing boron trichloride includes performing reaction between chlorine gas in a gas containing the chlorine gas and particulate boron carbide (4) in a state in which the boron carbide (4) flows in the gas containing the chlorine gas.
    Type: Application
    Filed: June 4, 2019
    Publication date: July 29, 2021
    Applicant: SHOWA DENKO K.K.
    Inventors: Jun DOU, Saki MOURI, Hideyuki KURIHARA
  • Patent number: 11028474
    Abstract: A method of cleaning a SiC monocrystal growth furnace provided with an in-furnace substrate composed of a 3C-SiC polycrystal having at least a surface in which an intensity ratio of a (111) plane with respect to other crystal planes is at least 85% but not more than 100% according to powder XRD analysis, the method including flowing a mixed gas of fluorine gas and at least one of an inert gas and air in a non-plasma state through the inside of the SiC monocrystal growth furnace, thereby selectively removing a SiC deposit deposited inside the SiC monocrystal growth furnace, wherein the mixed gas comprises at least 1 vol % but not more than 20 vol % of fluorine gas, and at least 80 vol % but not more than 99 vol % of an inert gas, and a temperature inside the SiC monocrystal growth furnace is from 200° C. to 500° C.
    Type: Grant
    Filed: December 26, 2016
    Date of Patent: June 8, 2021
    Assignee: SHOWA DENKO K.K.
    Inventors: Yosuke Tanimoto, Hideyuki Kurihara
  • Publication number: 20190330069
    Abstract: Provided is a method for producing boron trichloride capable of efficiently producing boron trichloride by suppressing the generation of byproducts resulting from water by sufficiently removing water from a reaction system. The method for producing boron trichloride includes: a dehydration step of bringing a chlorine-containing gas which contains chlorine gas and has a water content of 1 ppm by volume or less into contact with boron carbide at a temperature lower than a generation starting temperature at which the generation of the boron trichloride starts by the reaction between the boron carbide and the chlorine gas, and allowing water in the boron carbide to react with the chlorine gas in the chlorine-containing gas to remove the water contained in the boron carbide; and a generation step of allowing the boron carbide dehydrated in the dehydration step to react with the chlorine gas to generate boron trichloride.
    Type: Application
    Filed: May 30, 2017
    Publication date: October 31, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Saki MOURI, Hideyuki KURIHARA
  • Publication number: 20190003046
    Abstract: A method of cleaning a SiC monocrystal growth furnace provided with an in-furnace substrate composed of a 3C-SiC polycrystal having at least a surface in which an intensity ratio of a (111) plane with respect to other crystal planes is at least 85% but not more than 100% according to powder XRD analysis, the method including flowing a mixed gas of fluorine gas and at least one of an inert gas and air in a non-plasma state through the inside of the SiC monocrystal growth furnace, thereby selectively removing a SiC deposit deposited inside the SiC monocrystal growth furnace, wherein the mixed gas comprises at least 1 vol % but not more than 20 vol % of fluorine gas, and at least 80 vol % but not more than 99 vol % of an inert gas, and a temperature inside the SiC monocrystal growth furnace is from 200° C. to 500° C.
    Type: Application
    Filed: December 26, 2016
    Publication date: January 3, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Yosuke TANIMOTO, Hideyuki KURIHARA
  • Patent number: 7242004
    Abstract: The image correction method according to an embodiment of the present invention includes the steps of: (a) generating an absorption correction map by replacing a CT value of each pixel of a CT image with a corresponding linear absorption coefficient and replacing the linear absorption coefficient in a bone region with the linear absorption coefficient of water or a soft biological tissue; and (b) generating a corrected image by multiplying a value of each pixel of a nuclear medical image obtained with respect to substantially the same tomographic plane as a plane in which the CT image has been obtained by a corresponding pixel of the absorption correction map.
    Type: Grant
    Filed: August 2, 2005
    Date of Patent: July 10, 2007
    Assignee: Nihon Medi-Physics Co., Ltd.
    Inventors: Hideyuki Kurihara, Tomohiro Kaneta
  • Publication number: 20060027749
    Abstract: The image correction method according to an embodiment of the present invention includes the steps of: (a) generating an absorption correction map by replacing a CT value of each pixel of a CT image with a corresponding linear absorption coefficient and replacing the linear absorption coefficient in a bone region with the linear absorption coefficient of water or a soft biological tissue; and (b) generating a corrected image by multiplying a value of each pixel of a nuclear medical image obtained with respect to substantially the same tomographic plane as a plane in which the CT image has been obtained by a corresponding pixel of the absorption correction map.
    Type: Application
    Filed: August 2, 2005
    Publication date: February 9, 2006
    Inventors: Hideyuki Kurihara, Tomohiro Kaneta
  • Patent number: D965783
    Type: Grant
    Filed: December 21, 2020
    Date of Patent: October 4, 2022
    Inventors: Hideyuki Kurihara, Takafumi Doi, Masayuki Watanabe