Abstract: A single crystal silicon is prepared by constructing a silicon melt reservoir of an induction coil coated on its internal surface with a layer of a high melting point insulating material and placing silicon raw material in the reservoir, heating the silicon raw material by application of an external heating means and by current applied to the induction coil which electromagnetically heats the silicon thereby forming a pool of molten silicon in the reservoir, actively cooling said induction coil, and drawing up a single crystal silicon rod from the molten silicon in the melt reservoir.

Abstract: A single crystal silicon is prepared by providing a silicon melt reservoir formed of an induction coil coated on its internal surfaces with a high melting insulating material which is subjected to an electromagnetic field which heats silicon placed in said melt reservoir, melting silicon in the melt reservoir by the application of the electromagnetic field and simultaneously depositing a scull layer of silicon on the inner surface of said reservoir, and pulling up a single crystal silicon rod from the silicon melt in the melt reservoir.

Abstract: A method of producing single-crystal silicon is disclosed. Polycrystalline silicon rod is formed from polycrystalline silicon granules, lumps or a mixture thereof by continuous casting through electromagnetic induction. Then, silicon single cyrstal is grown from the polycrystalline silicon rod by the FZ method.