Abstract: A method of performing anisotropic etching more than once with respect to a semiconductor substrate (1) is provided with the steps of performing first-time anisotropic etching by using a first etching mask (2) so as to form a first anisotropically etched region (4) which is hollow, forming a second etching mask (7) over the first etching mask (2), performing second-time anisotropic etching by using the second etching mask (7), and previously forming the first etching mask (2) from a material which is resistant to an etchant used for patterning the second etching mask (7) before the first-time anisotropic etching is performed. Thus, the edge portion (6) of the first etched region (4) is protected so that its configuration is excellently maintained.

Abstract: Radiating light from a semiconductor laser element is radiated in a direction normal to the surface of a photodetector substrate. The semiconductor laser element and photodetector are disposed on the same plane. Specifically, a reflecting mirror surface formed of a slanting surface of (111) lattice plane having a ridge line of <110> direction is disposed on a silicon substrate of (100) lattice plane having an off-angle of 4.degree. to 14.degree. about an axis of <110> direction or on a silicon substrate of (511) lattice plane having an off-angle of 1.degree. to 11.degree. about an axis of <110> direction. The semiconductor laser chip is disposed at a position opposing to the reflecting mirror surface.

Abstract: A deflection plate for deflecting laser beams includes a transparent plate on which two grating areas are formed on the same surface. The first grating area has a plurality of parallel grooves. The second grating area has a plurality of grooves in a predetermined pattern. The depth and/or the duty ratio of the grooves in the first grating area differs from that in the second grating area.