Abstract: A terminal board having a plurality of terminals on which ball electrodes are formed can be prepared efficiently and economically without having any short-circuiting between terminals when its terminals formed in very close proximity to one another, as on an interposer (1), have their heads made uniform in height by causing the terminals (4) to project from a surface of a board (2) coated with a resist film, and applying a cutting tool (19) to the surface of the board (2) having the terminals project therefrom to carry out lathe turning for the heads of the terminals (4), while having the terminal board held by a rotatable chuck table (17) and rotating the chuck table (17).

Abstract: A terminal board having a plurality of terminals on which ball electrodes are formed can be prepared efficiently and economically without having any short-circuiting between terminals when its terminals formed in very close proximity to one another, as on an interposer (1), are made their heads uniform in height by causing the terminals (4) to project from surface of a board (2) coated with a resist film, and applying a cutting tool (19) to the surface of the board (2) having the terminals project therefrom to carry out lathe turning for heads of the terminals (4), while having the terminal board held by a rotatable chuck table (17) and rotating the chuck table (17).

Abstract: A semiconductor wafer dividing method for dividing a semiconductor wafer, in which a plurality of rectangular regions are demarcated by streets arranged in a lattice pattern on the face of the semiconductor wafer, and a semiconductor circuit is disposed in each of the rectangular regions, into the individual rectangular regions. This method includes a groove cutting step of cutting the face of the semiconductor wafer along the streets to form grooves along the streets on the face of the semiconductor wafer, and a back grinding step of grinding the back of the semiconductor wafer to reduce the thickness of the semiconductor wafer to not more than the depth of the grooves, thereby dividing the semiconductor wafer along the streets. This method further includes, before the back grinding step, a groove depth measuring step of measuring the depth of the grooves.

Abstract: A semiconductor wafer dividing method for dividing a semiconductor wafer, in which a plurality of rectangular regions are demarcated by streets arranged in a lattice pattern on the face of the semiconductor wafer, and a semiconductor circuit is disposed in each of the rectangular regions, into the individual rectangular regions. This method includes a groove cutting step of cutting the face of the semiconductor wafer along the streets to form grooves along the streets on the face of the semiconductor wafer, and a back grinding step of grinding the back of the semiconductor wafer to reduce the thickness of the semiconductor wafer to not more than the depth of the grooves, thereby dividing the semiconductor wafer along the streets. This method further includes, before the back grinding step, a groove depth measuring step of measuring the depth of the grooves.

Abstract: A cutting machine comprises a chucking means for holding the semiconductor wafer that is to be cut, a cutting means for cutting the semiconductor wafer held on the chucking means, a first moving means for moving the chucking means relative to the cutting means in a moving direction perpendicular to the center axis of the chucking means, and a second moving means for moving the cutting means relative to the chucking means in a direction of depth of cutting which is the direction of center axis of the chucking means. The cutting machine further comprises a thickness detecting means for detecting the thickness of the workpiece held on the chucking means, and a control means for controlling the motion of the second moving means depending upon the thickness of the workpiece detected by the thickness detecting means and for setting the position of the cutting means in the direction of depth of cutting relative to the chucking means thereby to set the depth of cutting the workpiece by the cutting means.

Abstract: A cutting machine comprises a chucking means for holding the semiconductor wafer that is to be cut, a cutting means for cutting the semiconductor wafer held on the chucking means, a first moving means for moving the chucking means relative to the cutting means in a moving direction perpendicular to the center axis of the chucking means, and a second moving means for moving the cutting means relative to the chucking means in a direction of depth of cutting which is the direction of center axis of the chucking means. The cutting machine further comprises a thickness detecting means for detecting the thickness of the workpiece held on the chucking means, and a control means for controlling the motion of the second moving means depending upon the thickness of the workpiece detected by the thickness detecting means and for setting the position of the cutting means in the direction of depth of cutting relative to the chucking means thereby to set the depth of cutting the workpiece by the cutting means.