Patents by Inventor Hideyuki SAWAI
Hideyuki SAWAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11662761Abstract: A reference voltage circuit includes: a first and a second NPN transistor having a collector and a base shorted and diode-connected, the second NPN transistor having an emitter connected to a first potential node and operating at a higher current density; a first resistor connected in series with the first NPN transistor; a second resistor having one end connected to a circuit with the first NPN transistor and the first resistor connected in series; a third resistor having one end connected to the collector of the second NPN transistor; a connection point to which the other ends of the second and the third resistor are connected; an arithmetic amplifier circuit having an inverting input terminal, a non-inverting input terminal, and an output terminal respectively connected to the second resistor, the third resistor, and the connection point; and a current supply circuit connected to the collector of the first NPN transistor.Type: GrantFiled: September 29, 2021Date of Patent: May 30, 2023Assignee: ABLIC Inc.Inventors: Hideyuki Sawai, Tsutomu Tomioka
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Publication number: 20220308614Abstract: Provided is a shunt regulator including: multiple resistors, connected in series between an output terminal and a ground terminal and constituting a voltage divider circuit; an output transistor, connected between the output terminal and the ground terminal; a first drive circuit, including a first reference voltage circuit which outputs a first reference voltage and an error amplifier, and controlling the output transistor based on a voltage of a first output terminal of the voltage divider circuit; a second drive circuit, controlling the output transistor based on a voltage of a second output terminal of the voltage divider circuit; and an activation control circuit, switching operation of the first drive circuit and the second drive circuit based on the first reference voltage. The second drive circuit has a shorter activation time than the first drive circuit.Type: ApplicationFiled: March 17, 2022Publication date: September 29, 2022Applicant: ABLIC Inc.Inventors: Tsutomu TOMIOKA, Hideyuki SAWAI
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Publication number: 20220137660Abstract: A reference voltage circuit includes: a first and a second NPN transistor having a collector and a base shorted and diode-connected, the second NPN transistor having an emitter connected to a first potential node and operating at a higher current density; a first resistor connected in series with the first NPN transistor; a second resistor having one end connected to a circuit with the first NPN transistor and the first resistor connected in series; a third resistor having one end connected to the collector of the second NPN transistor; a connection point to which the other ends of the second and the third resistor are connected; an arithmetic amplifier circuit having an inverting input terminal, a non-inverting input terminal, and an output terminal respectively connected to the second resistor, the third resistor, and the connection point; and a current supply circuit connected to the collector of the first NPN transistor.Type: ApplicationFiled: September 29, 2021Publication date: May 5, 2022Applicant: ABLIC Inc.Inventors: Hideyuki SAWAI, Tsutomu TOMIOKA
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Patent number: 11012041Abstract: A differential amplifier circuit includes a first input transistor that receives a signal supplied from the first input terminal via a gate thereof, a second input transistor that receives a signal supplied from the second input terminal via a gate thereof, and an offset voltage adjustment circuit that is connected to at least one between the first input terminal and the gate of the first input transistor and between the second input terminal and the gate of the second input transistor.Type: GrantFiled: June 18, 2019Date of Patent: May 18, 2021Assignee: ABLIC INC.Inventors: Hideyuki Sawai, Tsutomu Tomioka, Tadakatsu Kuroda
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Patent number: 10914783Abstract: A test circuit includes a test pad supplied with a test signal causing the test circuit to be transitioned to a test mode, and further includes a first p channel MOS transistor having a source connected to the test pad, and a gate applied with a prescribed reference voltage, a first n channel MOS transistor having a drain connected to a drain of the first p channel MOS transistor, and a source grounded via a first current limiting element, and a control circuit which has an input terminal connected to the drain of the first n channel MOS transistor, and an output terminal connected to a gate of the first n Tr, and controls the first n channel MOS transistor from an on state to an off state when the test signal becomes a prescribed voltage or more.Type: GrantFiled: January 25, 2019Date of Patent: February 9, 2021Assignee: ABLIC INC.Inventors: Tadakatsu Kuroda, Tsutomu Tomioka, Hideyuki Sawai
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Patent number: 10591942Abstract: A voltage regulator which includes a differential amplifier circuit containing a first and second input transistors, controlling a gate-source voltage in each of the first and second input transistors including: a current source configured to drive the differential amplifier circuit; the first input transistor containing a gate; the second input transistor containing a gate; and a voltage controller including at least one of a first voltage control circuit to control a voltage at a tail connection point, a second voltage control circuit to control the voltage at the gate of the first input transistor, a third voltage control circuit to control the voltage at the tail connection point, and a fourth voltage control circuit to control the voltage at the gate of the second input transistor.Type: GrantFiled: July 9, 2019Date of Patent: March 17, 2020Assignee: ABLIC INC.Inventors: Tadakatsu Kuroda, Tsutomu Tomioka, Hideyuki Sawai, Michiyasu Deguchi
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Publication number: 20200019200Abstract: A voltage regulator which includes a differential amplifier circuit containing a first and second input transistors, controlling a gate-source voltage in each of the first and second input transistors including: a current source configured to drive the differential amplifier circuit; the first input transistor containing a gate; the second input transistor containing a gate; and a voltage controller including at least one of a first voltage control circuit to control a voltage at a tail connection point, a second voltage control circuit to control the voltage at the gate of the first input transistor, a third voltage control circuit to control the voltage at the tail connection point, and a fourth voltage control circuit to control the voltage at the gate of the second input transistor.Type: ApplicationFiled: July 9, 2019Publication date: January 16, 2020Inventors: Tadakatsu KURODA, Tsutomu TOMIOKA, Hideyuki SAWAI, Michiyasu DEGUCHI
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Publication number: 20200014348Abstract: A differential amplifier circuit includes a first input transistor that receives a signal supplied from the first input terminal via a gate thereof, a second input transistor that receives a signal supplied from the second input terminal via a gate thereof, and an offset voltage adjustment circuit that is connected to at least one between the first input terminal and the gate of the first input transistor and between the second input terminal and the gate of the second input transistor.Type: ApplicationFiled: June 18, 2019Publication date: January 9, 2020Inventors: Hideyuki SAWAI, Tsutomu TOMIOKA, Tadakatsu KURODA
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Publication number: 20190277908Abstract: A test circuit includes a test pad supplied with a test signal causing the test circuit to be transitioned to a test mode, and further includes a first p channel MOS transistor having a source connected to the test pad, and a gate applied with a prescribed reference voltage, a first n channel MOS transistor having a drain connected to a drain of the first p channel MOS transistor, and a source grounded via a first current limiting element, and a control circuit which has an input terminal connected to the drain of the first n channel MOS transistor, and an output terminal connected to a gate of the first n Tr, and controls the first n channel MOS transistor from an on state to an off state when the test signal becomes a prescribed voltage or more.Type: ApplicationFiled: January 25, 2019Publication date: September 12, 2019Inventors: Tadakatsu KURODA, Tsutomu Tomioka, Hideyuki Sawai
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Patent number: 10348305Abstract: Provided is a level shift circuit capable of converting a negative voltage level as well as a positive voltage level. The level shift circuit includes a switching transistor between an input transistor and a load, the switching transistor including a gate connected to a voltage source, and an input negative voltage level is converted into a second negative voltage level based on a voltage of the voltage source and a threshold voltage of the switching transistor.Type: GrantFiled: November 29, 2017Date of Patent: July 9, 2019Assignee: ABLIC INC.Inventors: Hideyuki Sawai, Masakazu Sugiura
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Publication number: 20180234087Abstract: Provided is a signal selection circuit including a control circuit capable of generating a drive signal having a fast rise/fall time. A positive feedback circuit is provided to the control circuit, which generates the drive signal for controlling a plurality of switches configured to switch an input signal to provide the signal to an output terminal.Type: ApplicationFiled: November 29, 2017Publication date: August 16, 2018Inventors: Masakazu SUGIURA, Hideyuki SAWAI
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Publication number: 20180205378Abstract: Provided is a level shift circuit capable of converting a negative voltage level as well as a positive voltage level. The level shift circuit includes a switching transistor between an input transistor and a load, the switching transistor including a gate connected to a voltage source, and an input negative voltage level is converted into a second negative voltage level based on a voltage of the voltage source and a threshold voltage of the switching transistor.Type: ApplicationFiled: November 29, 2017Publication date: July 19, 2018Inventors: Hideyuki SAWAI, Masakazu SUGIURA
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Patent number: 9983067Abstract: Provided is an overheat detection circuit configured to accurately detect a temperature of a semiconductor device even at high temperature and thus avoid outputting an erroneous detection result. The overheat detection circuit includes: a PN junction element, being a temperature sensitive element; a constant current circuit configured to supply the PN junction element with a bias current; a comparator configured to compare a voltage generated at the PN junction element and a reference voltage; a second PN junction element configured to cause a leakage current to flow through a reference voltage circuit at high temperature; and a third PN junction element configured to bypass a leakage current of the constant current circuit at the high temperature.Type: GrantFiled: April 22, 2015Date of Patent: May 29, 2018Assignee: ABLIC INC.Inventors: Masakazu Sugiura, Tsutomu Tomioka, Hideyuki Sawai, Atsushi Igarashi, Nao Otsuka, Daisuke Okano
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Patent number: 9983068Abstract: Provided is an overheat detection circuit that is capable of quickly outputting an overheated state detection signal in an overheated state without outputting an unintended erroneous output caused by disturbance noise, such as momentary voltage fluctuations in the power supply. The overheat detection circuit includes: a temperature sensor; a comparison section; and a disturbance noise removal section configured to output an overheated state detection signal to an output section after a predetermined delay time has elapsed. The delay time is reduced in proportion to temperature.Type: GrantFiled: December 15, 2015Date of Patent: May 29, 2018Assignee: ABLIC INC.Inventors: Masakazu Sugiura, Hideyuki Sawai
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Publication number: 20160187203Abstract: Provided is an overheat detection circuit that is capable of quickly outputting an overheated state detection signal in an overheated state without outputting an unintended erroneous output caused by disturbance noise, such as momentary voltage fluctuations in the power supply. The overheat detection circuit includes: a temperature sensor; a comparison section; and a disturbance noise removal section configured to output an overheated state detection signal to an output section after a predetermined delay time has elapsed. The delay time is reduced in proportion to temperature.Type: ApplicationFiled: December 15, 2015Publication date: June 30, 2016Inventors: Masakazu SUGIURA, Hideyuki SAWAI
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Publication number: 20150308902Abstract: Provided is an overheat detection circuit configured to accurately detect a temperature of a semiconductor device even at high temperature and thus avoid outputting an erroneous detection result. The overheat detection circuit includes: a PN junction element, being a temperature sensitive element; a constant current circuit configured to supply the PN junction element with a bias current; a comparator configured to compare a voltage generated at the PN junction element and a reference voltage; a second PN junction element configured to cause a leakage current to flow through a reference voltage circuit at high temperature; and a third PN junction element configured to bypass a leakage current of the constant current circuit at the high temperature.Type: ApplicationFiled: April 22, 2015Publication date: October 29, 2015Inventors: Masakazu SUGIURA, Tsutomu TOMIOKA, Hideyuki SAWAI, Atsushi IGARASHI, Nao OTSUKA, Daisuke OKANO