Abstract: A filter includes first and second signal terminals, a filter circuit connected between the first and second signal terminals, a substrate having first and second surfaces, the first and second signal terminals being located on the first surface, a part of the filter circuit being located at a side of the second surface, a line located closer to the first surface than the filter circuit in the substrate, a first end of the line being connected to one of the first and second signal terminals, and a ground terminal that is located on the first surface and to which a second end of the line is connected, an area of a region where the line overlaps with the ground terminal being greater than an area of a region where the line overlaps with the one of the first and second signal terminals when the substrate is viewed in plan view.

Abstract: A filter includes an input terminal, an output terminal, a ground terminal, a first capacitor and a second capacitor that are connected in series between the input terminal and the output terminal, a capacitive element that is connected in parallel to the first capacitor and the second capacitor between the input terminal and the output terminal, and has a Q factor that is smaller than a Q factor of the first capacitor and is smaller than a Q factor of the second capacitor, and an inductor that has a first end and a second end, the first end being coupled to a node that is provided between the first capacitor and the second capacitor and that is coupled to the capacitive element through the first capacitor and the second capacitor, the second end being coupled to the ground terminal.

Abstract: A filter includes an input terminal, an output terminal, a first ground terminal, a second ground terminal, a first inductor having a first end coupled to a first node in a path between the input terminal and the output terminal and a second end coupled to a second node, a second inductor having a first end coupled to the second node and a second end coupled to the first ground terminal, and a third inductor having a first end coupled to the second node and a second end coupled to the second ground terminal.

Abstract: A filter includes an input terminal, an output terminal, a ground terminal, a first capacitor and a second capacitor that are connected in series between the input terminal and the output terminal, a capacitive element that is connected in parallel to the first capacitor and the second capacitor between the input terminal and the output terminal, and has a Q factor that is smaller than a Q factor of the first capacitor and is smaller than a Q factor of the second capacitor, and an inductor that has a first end and a second end, the first end being coupled to a node that is provided between the first capacitor and the second capacitor and that is coupled to the capacitive element through the first capacitor and the second capacitor, the second end being coupled to the ground terminal.

Abstract: A filter includes an input terminal, an output terminal, a first ground terminal, a second ground terminal, a first inductor having a first end coupled to a first node in a path between the input terminal and the output terminal and a second end coupled to a second node, a second inductor having a first end coupled to the second node and a second end coupled to the first ground terminal, and a third inductor having a first end coupled to the second node and a second end coupled to the second ground terminal.

Abstract: A high-frequency device includes: a circuit substrate including dielectric layers that are stacked, wiring patterns located on at least one of the dielectric layers, and a passive element formed of at least one of the wiring patterns, the circuit substrate having a first surface that is a surface of an outermost dielectric layer in a stacking direction of the dielectric layers; a terminal for connecting the high-frequency device to an external circuit, the terminal being located on the first surface and electrically connected to the passive element through a first path in the circuit substrate; and an acoustic wave element located on the first surface and electrically connected to the passive element through a second path in the circuit substrate.

Abstract: A filter includes first and second signal terminals, a filter circuit connected between the first and second signal terminals, a substrate having first and second surfaces, the first and second signal terminals being located on the first surface, a part of the filter circuit being located at a side of the second surface, a line located closer to the first surface than the filter circuit in the substrate, a first end of the line being connected to one of the first and second signal terminals, and a ground terminal that is located on the first surface and to which a second end of the line is connected, an area of a region where the line overlaps with the ground terminal being greater than an area of a region where the line overlaps with the one of the first and second signal terminals when the substrate is viewed in plan view.

Abstract: A high-pass filter includes: at least one capacitor located in a first pathway between input and output terminals and connected between the input and output terminals; at least one inductor, a first end of the at least one inductor being coupled to the first pathway, a second end of the at least one inductor being coupled to a ground; at least one first acoustic wave resonator located in a second pathway connected in parallel to the first pathway between the input and output terminals, the at least one first acoustic wave resonator being connected in parallel to the at least one capacitor; and at least one second acoustic wave resonator, a first end of the at least one second acoustic wave resonator being coupled to the second pathway, a second end of the at least one second acoustic wave resonator being coupled to a ground.

Abstract: A high-frequency device includes: a circuit substrate including dielectric layers that are stacked, wiring patterns located on at least one of the dielectric layers, and a passive element formed of at least one of the wiring patterns, the circuit substrate having a first surface that is a surface of an outermost dielectric layer in a stacking direction of the dielectric layers; a terminal for connecting the high-frequency device to an external circuit, the terminal being located on the first surface and electrically connected to the passive element through a first path in the circuit substrate; and an acoustic wave element located on the first surface and electrically connected to the passive element through a second path in the circuit substrate.

Abstract: A high-pass filter includes: at least one capacitor located in a first pathway between input and output terminals and connected between the input and output terminals; at least one inductor, a first end of the at least one inductor being coupled to the first pathway, a second end of the at least one inductor being coupled to a ground; at least one first acoustic wave resonator located in a second pathway connected in parallel to the first pathway between the input and output terminals, the at least one first acoustic wave resonator being connected in parallel to the at least one capacitor; and at least one second acoustic wave resonator, a first end of the at least one second acoustic wave resonator being coupled to the second pathway, a second end of the at least one second acoustic wave resonator being coupled to a ground.

Abstract: An acoustic wave device includes: a substrate; a first piezoelectric thin film resonator including a first resonance region in which a first lower electrode and a first upper electrode sandwich a first piezoelectric film; a second piezoelectric thin film resonator including a second resonance region in which a second lower electrode and a second upper electrode sandwich a second piezoelectric film; and a wiring layer that is located from an upper surface of the first lower electrode in a first extraction region, in which the first lower electrode is extracted from the first resonance region, to an upper surface of the second upper electrode located in a second extraction region, in which the second upper electrode is extracted from the second resonance region, and has a film thickness on the first lower electrode greater than a film thickness of the second piezoelectric film.

Abstract: A method of fabricating an acoustic wave device includes: forming a piezoelectric thin film resonator and a second lower electrode on a substrate, the piezoelectric thin film resonator having a resonance region in which a first lower electrode and a first upper electrode face each other across a piezoelectric film, the piezoelectric film and the first upper electrode are not formed on the second lower electrode outside the resonance region; forming a first dielectric film in the resonance region and a second dielectric film on the second lower electrode outside the resonance region at a same time, the first dielectric film and the second dielectric film being made of a material different from a material of the piezoelectric film; and forming a second upper electrode on the second dielectric film, the second upper electrode facing the second lower electrode.

Abstract: An acoustic wave device includes: a substrate; a first piezoelectric thin film resonator including a first resonance region in which a first lower electrode and a first upper electrode sandwich a first piezoelectric film; a second piezoelectric thin film resonator including a second resonance region in which a second lower electrode and a second upper electrode sandwich a second piezoelectric film; and a wiring layer that is located from an upper surface of the first lower electrode in a first extraction region, in which the first lower electrode is extracted from the first resonance region, to an upper surface of the second upper electrode located in a second extraction region, in which the second upper electrode is extracted from the second resonance region, and has a film thickness on the first lower electrode greater than a film thickness of the second piezoelectric film.

Abstract: A method of fabricating an acoustic wave device includes: forming a piezoelectric thin film resonator and a second lower electrode on a substrate, the piezoelectric thin film resonator having a resonance region in which a first lower electrode and a first upper electrode face each other across a piezoelectric film, the piezoelectric film and the first upper electrode are not formed on the second lower electrode outside the resonance region; forming a first dielectric film in the resonance region and a second dielectric film on the second lower electrode outside the resonance region at a same time, the first dielectric film and the second dielectric film being made of a material different from a material of the piezoelectric film; and forming a second upper electrode on the second dielectric film, the second upper electrode facing the second lower electrode.

Abstract: A stacked dielectric band-pass filter is disclosed, which enables widening of a passband to a side of a high band of 8 GHz or more. Within a stacked dielectric block, a pair of first ?/4 resonator electrodes that are formed on approximately the same plane, and connected to input terminals or output terminals via lead conductors respectively, two capacitance electrodes that are opposed to the first ?/4 resonator electrodes via a dielectric respectively, and formed on approximately the same plane, a ?/2 resonator electrode for connecting the capacitance electrodes to each other, and a pair of second ?/4 resonator electrodes that are opposed to the capacitance electrodes via a dielectric respectively, and formed on approximately the same plane, are buried.

Abstract: A stacked dielectric band-pass filter is disclosed, which enables widening of a passband to a side of a high band of 8 GHz or more. Within a stacked dielectric block, a pair of first ?/4 resonator electrodes that are formed on approximately the same plane, and connected to input terminals or output terminals via lead conductors respectively, two capacitance electrodes that are opposed to the first ?/4 resonator electrodes via a dielectric respectively, and formed on approximately the same plane, a ?/2 resonator electrode for connecting the capacitance electrodes to each other, and a pair of second ?/4 resonator electrodes that are opposed to the capacitance electrodes via a dielectric respectively, and formed on approximately the same plane, are buried.

Abstract: Surface-decorated utensil includes a ceramic ware and a plurality of decorative laminar elements of noble metal on its surface. As an alternative, the spacing between neighboring laminar elements is not less than 0.2 mm and the maximum length of each laminar element is not more than 8.5 mm. As another alternative, the spacing between neighboring laminar elements is not less than 10 mm and the maximum length of each laminar element is not more than 12 mm. In addition, the laminar elements are coated with a frit layer. The surface-decorated utensil is not damaged when used in an electronic range, while it is superior in chemical durability and coloration.