Abstract: A display apparatus according to an embodiment of the present disclosure includes a thin plate-shaped display cell that displays image and a plurality of exciters disposed on a back surface of the display cell and causing the display cell to vibrate. The plurality of exciters is such configured that the plurality of exciters is regarded as one exciter when the plurality of exciters generates vibration in the display cell.

Abstract: A display apparatus according to an embodiment of the present disclosure includes a thin plate-shaped display cell that displays image and a plurality of exciters disposed on a back surface of the display cell and causing the display cell to vibrate. The plurality of exciters is such configured that the plurality of exciters is regarded as one exciter when the plurality of exciters generates vibration in the display cell.

Abstract: A flat panel speaker according to an embodiment of the disclosure includes a flat panel and a plurality of vibrators that are disposed on a back surface of the flat panel. The plurality of vibrators are disposed to avoid a location that most easily vibrates in an entire range of audio frequencies when vibration is generated in the flat panel by the plurality of vibrators. A large stationary wave with respect to the flat panel therefore does not easily occur.

Abstract: A first board includes a first insulating substrate including a first main surface, a first electrode pad, and a first resist film. The first electrode pad is a conductor pattern provided on the first main surface. The first resist film is provided on the first main surface and is located closer to the first electrode pad than any conductor provided on the first main surface. The first resist film is spaced away from the first electrode pad with a gap provided between the first resist film and the first electrode pad. The first resist film is thicker than the first electrode pad.

Abstract: A plate-shaped multilayer wiring substrate includes at least two resin layers stacked on top of each other and each including an insulating base and a conductive pattern provided on the insulating base, and a front surface layer joined onto the resin layers stacked. The front surface layer has a higher elastic modulus than an elastic modulus of the insulating bases. A joint interface between the resin layers and the front surface layer includes projections and depressions. Also, a method for manufacturing the plate-shaped multilayer wiring substrate includes a step of stacking, on top of resin layers, a front surface layer having a higher elastic modulus than an elastic modulus of the resin layers, and a step of performing pressing under pressure from above the front surface layer by using a flat surface in a heated state to join the resin layers and the front surface layer.

Abstract: A first board includes a first insulating substrate including a first main surface, a first electrode pad, and a first resist film. The first electrode pad is a conductor pattern provided on the first main surface. The first resist film is provided on the first main surface and is located closer to the first electrode pad than any conductor provided on the first main surface. The first resist film is spaced away from the first electrode pad with a gap provided between the first resist film and the first electrode pad. The first resist film is thicker than the first electrode pad.

Abstract: A display apparatus according to an embodiment of the present disclosure includes a thin plate-shaped display cell that displays image and a plurality of exciters disposed on a back surface of the display cell and causing the display cell to vibrate. The plurality of exciters is such configured that the plurality of exciters is regarded as one exciter when the plurality of exciters generates vibration in the display cell.

Abstract: A plate-shaped multilayer wiring substrate includes at least two resin layers stacked on top of each other and each including an insulating base and a conductive pattern provided on the insulating base, and a front surface layer joined onto the resin layers stacked. The front surface layer has a higher elastic modulus than an elastic modulus of the insulating bases. A joint interface between the resin layers and the front surface layer includes projections and depressions. Also, a method for manufacturing the plate-shaped multilayer wiring substrate includes a step of stacking, on top of resin layers, a front surface layer having a higher elastic modulus than an elastic modulus of the resin layers, and a step of performing pressing under pressure from above the front surface layer by using a flat surface in a heated state to join the resin layers and the front surface layer.

Abstract: A display apparatus according to an embodiment of the present disclosure includes a thin plate-shaped display cell that displays image and a plurality of exciters disposed on a back surface of the display cell and causing the display cell to vibrate. The plurality of exciters is such configured that the plurality of exciters is regarded as one exciter when the plurality of exciters generates vibration in the display cell.

Abstract: A semiconductor light emitting device (A) includes an elongated substrate (1) formed with a through-hole (11), a first, a second and a third semiconductor light emitting elements (3R, 3G, 3B) mounted on the main surface of the substrate (1), and an electrode (2R) electrically connected to the first semiconductor light emitting element (3R) and extending to the reverse surface of the substrate (1) via the through-hole (11). The first semiconductor light emitting element (3R) and the through-hole (11) are positioned between the second semiconductor light emitting element (3G) and the third semiconductor light emitting element (3B) in the longitudinal direction of the substrate (1). The second semiconductor light emitting element (3G) is arranged closer to one end of the substrate (1), whereas the third semiconductor light emitting element (3B) is arranged closer to the other end of the substrate (1).

Abstract: A flat panel speaker according to an embodiment of the disclosure includes a flat panel and a plurality of vibrators that are disposed on a back surface of the flat panel. The plurality of vibrators are disposed to avoid a location that most easily vibrates in an entire range of audio frequencies when vibration is generated in the flat panel by the plurality of vibrators. A large stationary wave with respect to the flat panel therefore does not easily occur.

Abstract: A semiconductor light emitting device (A) includes an elongated substrate (1) formed with a through-hole (11), a first, a second and a third semiconductor light emitting elements (3R, 3G, 3B) mounted on the main surface of the substrate (1), and an electrode (2R) electrically connected to the first semiconductor light emitting element (3R) and extending to the reverse surface of the substrate (1) via the through-hole (11). The first semiconductor light emitting element (3R) and the through-hole (11) are positioned between the second semiconductor light emitting element (3G) and the third semiconductor light emitting element (3B) in the longitudinal direction of the substrate (1). The second semiconductor light emitting element (3G) is arranged closer to one end of the substrate (1), whereas the third semiconductor light emitting element (3B) is arranged closer to the other end of the substrate (1).

Abstract: A semiconductor light emitting device (A) includes an elongated substrate (1) formed with a through-hole (11), a first, a second and a third semiconductor light emitting elements (3R, 3G, 3B) mounted on the main surface of the substrate (1), and an electrode (2R) electrically connected to the first semiconductor light emitting element (3R) and extending to the reverse surface of the substrate (1) via the through-hole (11). The first semiconductor light emitting element (3R) and the through-hole (11) are positioned between the second semiconductor light emitting element (3G) and the third semiconductor light emitting element (3B) in the longitudinal direction of the substrate (1). The second semiconductor light emitting element (3G) is arranged closer to one end of the substrate (1), whereas the third semiconductor light emitting element (3B) is arranged closer to the other end of the substrate (1).

Abstract: A semiconductor light emitting device (A) includes an elongated substrate (1) formed with a through-hole (11), a first, a second and a third semiconductor light emitting elements (3R, 3G, 3B) mounted on the main surface of the substrate (1), and an electrode (2R) electrically connected to the first semiconductor light emitting element (3R) and extending to the reverse surface of the substrate (1) via the through-hole (11). The first semiconductor light emitting element (3R) and the through-hole (11) are positioned between the second semiconductor light emitting element (3G) and the third semiconductor light emitting element (3B) in the longitudinal direction of the substrate (1). The second semiconductor light emitting element (3G) is arranged closer to one end of the substrate (1), whereas the third semiconductor light emitting element (3B) is arranged closer to the other end of the substrate (1).

Abstract: A semiconductor light emitting device (A) includes an elongated substrate (1) formed with a through-hole (11), a first, a second and a third semiconductor light emitting elements (3R, 3G, 3B) mounted on the main surface of the substrate (1), and an electrode (2R) electrically connected to the first semiconductor light emitting element (3R) and extending to the reverse surface of the substrate (1) via the through-hole (11). The first semiconductor light emitting element (3R) and the through-hole (11) are positioned between the second semiconductor light emitting element (3G) and the third semiconductor light emitting element (3B) in the longitudinal direction of the substrate (1). The second semiconductor light emitting element (3G) is arranged closer to one end of the substrate (1), whereas the third semiconductor light emitting element (3B) is arranged closer to the other end of the substrate (1).

Abstract: A semiconductor light emitting device (A) includes an elongated substrate (1) formed with a through-hole (11), a first, a second and a third semiconductor light emitting elements (3R, 3G, 3B) mounted on the main surface of the substrate (1), and an electrode (2R) electrically connected to the first semiconductor light emitting element (3R) and extending to the reverse surface of the substrate (1) via the through-hole (11). The first semiconductor light emitting element (3R) and the through-hole (11) are positioned between the second semiconductor light emitting element (3G) and the third semiconductor light emitting element (3B) in the longitudinal direction of the substrate (1). The second semiconductor light emitting element (3G) is arranged closer to one end of the substrate (1), whereas the third semiconductor light emitting element (3B) is arranged closer to the other end of the substrate (1).

Abstract: A semiconductor light emitting device (A) includes an elongated substrate (1) formed with a through-hole (11), a first, a second and a third semiconductor light emitting elements (3R, 3G, 3B) mounted on the main surface of the substrate (1), and an electrode (2R) electrically connected to the first semiconductor light emitting element (3R) and extending to the reverse surface of the substrate (1) via the through-hole (11). The first semiconductor light emitting element (3R) and the through-hole (11) are positioned between the second semiconductor light emitting element (3G) and the third semiconductor light emitting element (3B) in the longitudinal direction of the substrate (1). The second semiconductor light emitting element (3G) is arranged closer to one end of the substrate (1), whereas the third semiconductor light emitting element (3B) is arranged closer to the other end of the substrate (1).

Abstract: A semiconductor light emitting device (A) includes an elongated substrate (1) formed with a through-hole (11), a first, a second and a third semiconductor light emitting elements (3R, 3G, 3B) mounted on the main surface of the substrate (1), and an electrode (2R) electrically connected to the first semiconductor light emitting element (3R) and extending to the reverse surface of the substrate (1) via the through-hole (11). The first semiconductor light emitting element (3R) and the through-hole (11) are positioned between the second semiconductor light emitting element (3G) and the third semiconductor light emitting element (3B) in the longitudinal direction of the substrate (1). The second semiconductor light emitting element (3G) is arranged closer to one end of the substrate (1), whereas the third semiconductor light emitting element (3B) is arranged closer to the other end of the substrate (1).

Abstract: A semiconductor light emitting device (A) includes an elongated substrate (1) formed with a through-hole (11), a first, a second and a third semiconductor light emitting elements (3R, 3G, 3B) mounted on the main surface of the substrate (1), and an electrode (2R) electrically connected to the first semiconductor light emitting element (3R) and extending to the reverse surface of the substrate (1) via the through-hole (11). The first semiconductor light emitting element (3R) and the through-hole (11) are positioned between the second semiconductor light emitting element (3G) and the third semiconductor light emitting element (3B) in the longitudinal direction of the substrate (1). The second semiconductor light emitting element (3G) is arranged closer to one end of the substrate (1), whereas the third semiconductor light emitting element (3B) is arranged closer to the other end of the substrate (1).

Abstract: In a schlieren optical system, a laser beam is passed through the jet flow and the ambient around the jet flow, and a high speed sampling is performed using a high speed photo sensor while displacing measurement points. The value obtained by sampling represents a result of the optical path caused curved by a density gradient generated in an arc-shape from the center of the jet flow. The value is subjected to a high speed discrete Fourier transform and decomposed into frequency components which constitute the noise. Thereafter, Abel inversion is performed on data belonging to a particular frequency to obtain a density gradient in the radial direction from the center of the jet flow. The obtained density gradient is visualized in a graph display, so that the position of the sound source and the state of the jet flow can be accurately grasped.