Abstract: A gas sensor system includes a first pipe through which a specimen atmosphere is conveyed; a second pipe through which humidified air is conveyed, the humidified air being hotter and more humid than the specimen atmosphere, the humidified air having a lower water vapor pressure than a saturation water vapor pressure; a mixing device mixing the specimen atmosphere and the humidified air so that a water vapor pressure of mixed air of the specimen atmosphere and the humidified air is less than a saturation water vapor pressure; a third pipe connected with the mixing device; a cooling device cooling the mixed air conveyed through the third pipe so that the water vapor pressure of the mixed air becomes the saturation water vapor pressure; and a chemical sensor device including a sensor surface to which the mixed air cooled by the cooling device is supplied.

Abstract: A method for inspecting probe molecule includes evaluating the formation of the probe molecule at the surface of the graphene by comparing an intensity ratio a1/b1, and an intensity ratio a2/b2. The intensity al is of a peak of the first Raman spectrum having a peak top positioned in a first band of not less than 1200 cm?1 and not more than 1500 cm?1. The intensity b1 is of a peak of the first Raman spectrum having a peak top positioned in a second band of not less than 1510 cm?1 and not more than 1800 cm?1. The intensity a2 is of a peak of the second Raman spectrum having a peak top positioned in the first band. The intensity b2 is of a peak of the second Raman spectrum having a peak top positioned in the second band.

Abstract: According to one embodiment, the storing method includes (S1) preparing the chemical sensor in which a probe molecule for capturing the target substance is immobilized on at least a part of a surface of the sensitive film, and (S2) forming a protective film that is formed of a water-soluble material on the surface so as to cover the surface on which the probe molecule is immobilized.

Abstract: A graphene transistor includes an insulating film extending in a first direction and a second direction, the second direction crossing the first direction; graphene located on the insulating film, the graphene including a first opening and a second opening separated from each other in the first direction; a first electrode, the first electrode contacting an upper surface of the graphene, contacting an edge of the graphene positioned in the first opening, and contacting the insulating film in the first opening; and a second electrode, the second electrode contacting the upper surface of the graphene, contacting an edge of the graphene positioned in the second opening, and contacting the insulating film in the second opening.

Abstract: According to one embodiment, a method for immobilizing a nucleic acid compound on a surface of a sensor element including graphene, graphene oxide, a carbon nanotube, or graphite, the method includes preparing an aqueous solution containing a nucleic acid compound and sodium chloride, wherein the nucleic acid compound includes a polycyclic aromatic moiety including a polycyclic aromatic skeleton and a linker structure bonded to the polycyclic aromatic skeleton, and a nucleic acid moiety bonded to the linker structure, and dropping the aqueous solution onto the surface of the sensor element.

Abstract: According to one embodiment, a sensor includes a base body, a first movable structure body, and a first fixed structure body. The first movable structure body includes first movable electrodes. A direction from the base body toward the first movable electrodes is aligned with a first direction. A distance between the base body and the plurality of first movable electrodes is changeable. A direction from one of the first movable electrodes toward an other one of the first movable electrodes is aligned with a second direction crossing the first direction. The first fixed structure body includes first fixed electrodes. One of the first fixed electrodes is between the one of the first movable electrodes and the other one of the first movable electrodes. A first movable electrode length along the first direction is shorter than a first fixed electrode length along the first direction.

Abstract: According to one embodiment, a sensor includes a base body, a first structure body, and a second structure body. The first structure body includes a first fixed portion, a first conductive portion, and first electrodes. The first fixed portion is fixed to the base body. The first conductive portion is held by the first fixed portion. The first conductive portion is separated from the base body in a first direction. The first electrodes are held by the first conductive portion. A distance between the base body and the first electrodes is changeable. The second structure body includes a second conductive portion and second electrodes. The second conductive portion is fixed to the base body. The second electrodes are held by the second conductive portion. One of the second electrodes is between the one of the first electrodes and the other one of the first electrodes.

Abstract: There is provided an antiviral vinyl-chloride-based resin composition including: 100 parts by weight of a poly(vinyl chloride)-based resin obtained by mixing 10-90 parts by weight of a vinyl-chloride-based resin for paste with 90-10 parts by weight of a suspension vinyl-chloride-based resin; and 0.5-10.0 parts by weight of a sulfonic-acid-based surfactant.

Abstract: According to one embodiment, a sensor includes a base body, a first structure body, and a second structure body. The first structure body includes a first fixed portion, a first conductive portion, and first electrodes. The first fixed portion is fixed to the base body. The first conductive portion is held by the first fixed portion. The first conductive portion is separated from the base body in a first direction. The first electrodes are held by the first conductive portion. A distance between the base body and the first electrodes is changeable. The second structure body includes a second conductive portion and second electrodes. The second conductive portion is fixed to the base body. The second electrodes are held by the second conductive portion. One of the second electrodes is between the one of the first electrodes and the other one of the first electrodes.

Abstract: According to one embodiment, a sensor includes a base body, a first movable structure body, and a first fixed structure body. The first movable structure body includes first movable electrodes. A direction from the base body toward the first movable electrodes is aligned with a first direction. A distance between the base body and the plurality of first movable electrodes is changeable. A direction from one of the first movable electrodes toward an other one of the first movable electrodes is aligned with a second direction crossing the first direction. The first fixed structure body includes first fixed electrodes. One of the first fixed electrodes is between the one of the first movable electrodes and the other one of the first movable electrodes. A first movable electrode length along the first direction is shorter than a first fixed electrode length along the first direction.

Abstract: According to one embodiment, the p-side electrode is provided on the second semiconductor layer. The insulating film is provided on the p-side electrode. The n-side electrode includes a first portion, a second portion, and a third portion. The first portion is provided on a side face of the first semiconductor layer. The second portion is provided in the first n-side region. The third portion overlaps the p-side electrode via the insulating film and connects the first portion and the second portion to each other.

Abstract: According to one embodiment, a MEMS device is disclosed. The MEMS device includes a substrate, and a MEMS vibrator provided on the substrate. The MEMS vibrator includes a first vibration portion disposed above the substrate, and a control electrode to control a vibration property of the first vibration portion. The control electrode is disposed without contacting the first vibration portion.

Abstract: The semiconductor layer has a first surface, a second surface provided on opposite side from the first surface, and a third surface provided on the opposite side from the first surface with a step difference with respect to the second surface. The semiconductor layer includes a light emitting layer between the first surface and the third surface. The first electrode is in contact with the second surface. The second electrode is provided in a plane of the third surface. The second electrode includes a contact part in contact with the third surface and an end part not in contact with the third surface. The second electrode contains silver. The insulating film is provided between the end part of the second electrode and the third surface. A semiconductor light emitting device having a high light extraction efficiency is provided.

Abstract: The semiconductor layer has a first surface, a second surface provided on opposite side from the first surface, and a third surface provided on the opposite side from the first surface with a step difference with respect to the second surface. The semiconductor layer includes a light emitting layer between the first surface and the third surface. The first electrode is in contact with the second surface. The second electrode is provided in a plane of the third surface. The second electrode includes a contact part in contact with the third surface and an end part not in contact with the third surface. The second electrode contains silver. The insulating film is provided between the end part of the second electrode and the third surface. A semiconductor light emitting device having a high light extraction efficiency is provided.

Abstract: According to one embodiment, a connection structure is disclosed. The connection structure includes a plug having conductivity, a first insulating film, and an electrode. The first insulating film covers a side surface of the plug. The electrode is provided on an upper surface of the plug, and includes a polycrystalline silicon germanium layer and an amorphous silicon germanium layer. The polycrystalline silicon germanium layer is in contact with at least part of the upper surface of the plug without an intervention the amorphous silicon germanium layer.

Abstract: There is provided an antiviral vinyl-chloride-based resin composition including: 100 parts by weight of a poly(vinyl chloride)-based resin obtained by mixing 10-90 parts by weight of a vinyl-chloride-based resin for paste with 90-10 parts by weight of a suspension vinyl-chloride-based resin; and 0.5-10.0 parts by weight of a sulfonic-acid-based surfactant.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a sealing member configured to cover a lower surface of the semiconductor layer and a side surface of the semiconductor layer to protrude to be higher than an upper surface of the semiconductor layer at a side of the semiconductor layer, a fluorescer layer provided above the semiconductor layer and the sealing member, and an insulating film provided between the sealing member and the semiconductor layer and between the sealing member and the fluorescer layer. A corner of a protruding portion of the sealing member is rounded.

Abstract: According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a light emitting layer; and a phosphor layer provided on the semiconductor layer. The phosphor layer includes a plurality of phosphors, ?0.05<A×(AR)+B×(Np)+C<0.05 being satisfied for ?0.149055?(3×0.011797)?constant A??0.149055+(3×0.011797), ?0.000192?(3×0.00002461)?constant B??0.000192+(3×0.00002461), and 0.0818492?(3×0.005708)?constant C?0.0818492+(3×0.005708). AR is a ratio of a thickness of the phosphor layer to a width of the phosphor layer, and Np is a number of the plurality of phosphors.

Abstract: According to one embodiment, the n-side electrode has a corner and a plurality of straight portions. The plurality of straight portions extends in different directions. The corner connects the plurality of straight portions. A first insulating film is provided between the semiconductor layer and the corner of the n-side electrode. The corner is not in contact with the semiconductor layer. The straight portions of the n-side electrode are in contact with the semiconductor layer.

Abstract: According to one embodiment, the p-side electrode is provided on the second semiconductor layer. The insulating film is provided on the p-side electrode. The n-side electrode includes a first portion, a second portion, and a third portion. The first portion is provided on a side face of the first semiconductor layer. The second portion is provided in the first n-side region. The third portion overlaps the p-side electrode via the insulating film and connects the first portion and the second portion to each other.