Patents by Inventor Hideyuki Uehigashi
Hideyuki Uehigashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240136409Abstract: A silicon carbide wafer includes a substrate made of silicon carbide and an epitaxial layer made of silicon carbide and disposed on the substrate. A concentration of carbon vacancies in the substrate and the epitaxial layer continuously decreases from the substrate toward the epitaxial layer. The concentration of the carbon vacancies in the substrate is 3.0×1015 cm?3 or more.Type: ApplicationFiled: September 20, 2023Publication date: April 25, 2024Inventor: Hideyuki UEHIGASHI
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Patent number: 11846040Abstract: A silicon carbide single crystal contains a heavy metal element having a specific gravity higher than a specific gravity of iron. An addition density of the heavy metal element at least in an outer peripheral portion of the silicon carbide single crystal is set to 1×1015 cm?3 or more.Type: GrantFiled: December 16, 2020Date of Patent: December 19, 2023Assignees: DENSO CORPORATION, CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRYInventors: Yuichiro Tokuda, Hideyuki Uehigashi, Norihiro Hoshino, Hidekazu Tsuchida, Isaho Kamata
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Patent number: 11618969Abstract: A SiC single crystal composite includes: a central portion positioned at a center in plan view; and an outer circumferential portion surrounding an outer circumference of the central portion, in which crystal planes of the central portion and the outer circumferential portion are inclined to each other or different from each other, a boundary is present between the central portion and the outer circumferential portion, and a direction of a crystal constituting the central portion and a direction of a crystal constituting the outer circumferential portion are different from each other via the boundary.Type: GrantFiled: November 14, 2017Date of Patent: April 4, 2023Assignees: SHOWA DENKO K.K., DENSO CORPORATIONInventors: Yohei Fujikawa, Hideyuki Uehigashi
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Publication number: 20230040316Abstract: A semiconductor device includes a semiconductor element, a first wiring member, a second wiring member, and a terminal. The semiconductor element includes a first main electrode and a second main electrode on a side opposite from the first main electrode. The first wiring member is connected to the first main electrode. The terminal has a first terminal surface connected to the second main electrode and a second terminal surface. The second terminal has four sides. Two of the four sides are parallel to a first direction intersecting the thickness direction, and other two sides of the four sides are parallel to a second direction perpendicular to the thickness direction and the first direction. The second wiring member is connected to the second terminal surface of the terminal through solder, and has a groove. The groove overlaps one or two of the four sides of the second terminal surface.Type: ApplicationFiled: October 28, 2022Publication date: February 9, 2023Inventors: DAISUKE FUKUOKA, HIDEYUKI UEHIGASHI, MASAYOSHI UMEZAWA, MASANORI OOSHIMA, RYOJI UWATAKI, TAKAHIRO HIRANO
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Patent number: 11152472Abstract: A crystalline oxide semiconductor with excellent crystalline qualities that is useful for semiconductors requiring heat dissipation is provided. A crystalline oxide semiconductor including a first crystal axis, a second crystal axis, a first side, and a second side that is shorter than the first side, a linear thermal expansion coefficient of the first crystal axis is smaller than a linear thermal expansion coefficient of the second crystal axis, a direction of the first side is parallel and/or substantially parallel to a direction of the first crystal axis, and a direction of the second side is parallel and/or substantially parallel to a direction of the second crystal axis.Type: GrantFiled: December 23, 2019Date of Patent: October 19, 2021Assignees: FLOSFIA INC., DENSO CORPORATIONInventors: Isao Takahashi, Tatsuya Toriyama, Masahiro Sugimoto, Takashi Shinohe, Hideyuki Uehigashi, Junji Ohara, Fusao Hirose, Hideo Matsuki
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Patent number: 11107892Abstract: A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 ?m/h or more from an initial growth stage.Type: GrantFiled: April 19, 2018Date of Patent: August 31, 2021Assignees: SHOWA DENKO K.K., Central Research Institute Of Electric Power Industry, DENSO CORPORATIONInventors: Keisuke Fukada, Naoto Ishibashi, Akira Bando, Masahiko Ito, Isaho Kamata, Hidekazu Tsuchida, Kazukuni Hara, Masami Naito, Hideyuki Uehigashi, Hiroaki Fujibayashi, Hirofumi Aoki, Toshikazu Sugiura, Katsumi Suzuki
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Patent number: 11008670Abstract: A manufacturing method of a SiC ingot includes a crystal growth step of growing a crystal on a principal plane having an offset angle with respect to a {0001} plane, in which, at least in a latter half growth step of the crystal growth step, after the crystal in the crystal growth step grows 7 mm or more from the principal plane, and in which, the crystal is grown by setting an acute angle, between the {0001} plane and an inclined plane which is perpendicular to a cut section cut along an offset direction and passes through both a center of a crystal growth surface and an offset downstream end portion of the crystal growth surface, to be equal to or more than an angle smaller than an offset angle by 2° and equal to or less than 8.6°.Type: GrantFiled: December 22, 2017Date of Patent: May 18, 2021Assignee: SHOWA DENKO K.K.Inventors: Yohei Fujikawa, Hideyuki Uehigashi
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Publication number: 20210102311Abstract: A silicon carbide single crystal contains a heavy metal element having a specific gravity higher than a specific gravity of iron. An addition density of the heavy metal element at least in an outer peripheral portion of the silicon carbide single crystal is set to 1×1015 cm?3 or more.Type: ApplicationFiled: December 16, 2020Publication date: April 8, 2021Inventors: Yuichiro TOKUDA, Hideyuki UEHIGASHI, Norihiro HOSHINO, Hidekazu TSUCHIDA, Isaho KAMATA
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Patent number: 10896831Abstract: A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.Type: GrantFiled: August 31, 2018Date of Patent: January 19, 2021Assignees: NuFlare Technology, Inc., Showa Denko K.K., Central Research Institute of Electric Power IndustryInventors: Kunihiko Suzuki, Naohisa Ikeya, Keisuke Fukada, Masahiko Ito, Isaho Kamata, Hidekazu Tsuchida, Hiroaki Fujibayashi, Hideyuki Uehigashi, Masami Naito, Kazukuni Hara, Hirofumi Aoki, Takahiro Kozawa
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Patent number: 10840339Abstract: A silicon carbide semiconductor substrate includes a first conductivity type substrate doped with a first conductivity type impurity to have a first conductivity type and having a specific resistance of 30 m?cm or less. A lifetime of minority carriers in the first conductivity type substrate is set to 100 nsec or less.Type: GrantFiled: January 23, 2019Date of Patent: November 17, 2020Assignee: DENSO CORPORATIONInventor: Hideyuki Uehigashi
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Publication number: 20200212184Abstract: A crystalline oxide semiconductor with excellent crystalline qualities that is useful for semiconductors requiring heat dissipation is provided. A crystalline oxide semiconductor including a first crystal axis, a second crystal axis, a first side, and a second side that is shorter than the first side, a linear thermal expansion coefficient of the first crystal axis is smaller than a linear thermal expansion coefficient of the second crystal axis, a direction of the first side is parallel and/or substantially parallel to a direction of the first crystal axis, and a direction of the second side is parallel and/or substantially parallel to a direction of the second crystal axis.Type: ApplicationFiled: December 23, 2019Publication date: July 2, 2020Inventors: Isao TAKAHASHI, Tatsuya TORIYAMA, Masahiro SUGIMOTO, Takashi SHINOHE, Hideyuki UEHIGASHI, Junji OHARA, Fusao HIROSE, Hideo MATSUKI
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Publication number: 20200087815Abstract: A manufacturing method of a SiC ingot includes a crystal growth step of growing a crystal on a principal plane having an offset angle with respect to a {0001} plane, in which, at least in a latter half growth step of the crystal growth step, after the crystal in the crystal growth step grows 7 mm or more from the principal plane, and in which, the crystal is grown by setting an acute angle, between the {0001} plane and an inclined plane which is perpendicular to a cut section cut along an offset direction and passes through both a center of a crystal growth surface and an offset downstream end portion of the crystal growth surface, to be equal to or more than an angle smaller than an offset angle by 2° and equal to or less than 8.6°.Type: ApplicationFiled: December 22, 2017Publication date: March 19, 2020Applicant: SHOWA DENKO K.K.Inventors: Yohei FUJIKAWA, Hideyuki UEHIGASHI
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Publication number: 20200083330Abstract: A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 ?m/h or more from an initial growth stage.Type: ApplicationFiled: April 19, 2018Publication date: March 12, 2020Applicants: SHOWA DENKO K.K., Central Research Institute of Electric Power Industry, DENSO CORPORATIONInventors: Keisuke FUKADA, Naoto ISHIBASHI, Akira BANDO, Masahiko ITO, Isaho KAMATA, Hidekazu TSUCHIDA, Kazukuni HARA, Masami NAITO, Hideyuki UEHIGASHI, Hiroaki FUJIBAYASHI, Hirofumi AOKI, Toshikazu SUGIURA, Katsumi SUZUKI
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Publication number: 20190376206Abstract: This SiC epitaxial wafer includes: a SiC single crystal substrate of which a main surface has an off-angle of 0.4° to 5° with respect to (0001) plane; and an epitaxial layer provided on the SiC single crystal substrate, wherein the epitaxial layer has a basal plane dislocation density of 0.1 pieces/cm2 or less that is a density of basal plane dislocations extending from the SiC single crystal substrate to an outer surface and an intrinsic 3C triangular defect density of 0.1 pieces/cm2 or less.Type: ApplicationFiled: December 25, 2017Publication date: December 12, 2019Applicants: SHOWA DENKO K.K, Central Research Institute of Electric Power Industry, DENSO CORPORATIONInventors: Keisuke FUKADA, Naoto ISHIBASHI, Akira BANDO, Masahiko ITO, Isaho KAMATA, Hidekazu TSUCHIDA, Kazukuni HARA, Masami NAITO, Hideyuki UEHIGASHI, Hiroaki FUJIBAYASHI, Hirofumi AOKI, Toshikazu SUGIURA, Katsumi SUZUKI
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Publication number: 20190360118Abstract: A SiC single crystal composite includes: a central portion positioned at a center in plan view; and an outer circumferential portion surrounding an outer circumference of the central portion, in which crystal planes of the central portion and the outer circumferential portion are inclined to each other or different from each other, a boundary is present between the central portion and the outer circumferential portion, and a direction of a crystal constituting the central portion and a direction of a crystal constituting the outer circumferential portion are different from each other via the boundary.Type: ApplicationFiled: November 14, 2017Publication date: November 28, 2019Applicants: SHOWA DENKO K.K., DENSO CORPORATIONInventors: Yohei FUJIKAWA, Hideyuki UEHIGASHI
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Publication number: 20190252503Abstract: A silicon carbide semiconductor substrate includes a first conductivity type substrate doped with a first conductivity type impurity to have a first conductivity type and having a specific resistance of 30 m?cm or less. A lifetime of minority carriers in the first conductivity type substrate is set to 100 nsec or less.Type: ApplicationFiled: January 23, 2019Publication date: August 15, 2019Inventor: Hideyuki UEHIGASHI
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Patent number: 10262863Abstract: A method for manufacturing a SiC epitaxial wafer according to one aspect of the present invention includes separately introducing, into a reaction space for SiC epitaxial growth, a basic N-based gas composed of molecules containing an N atom within the molecular structure but having neither a double bond nor a triple bond between nitrogen atoms, and a Cl-based gas composed of molecules containing a Cl atom within the molecular structure, and mixing the N-based gas and the Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and the Cl-based gas.Type: GrantFiled: December 8, 2015Date of Patent: April 16, 2019Assignees: SHOWA DENKO K.K., Central Research Institute Of Electric Power IndustryInventors: Keisuke Fukada, Masahiko Ito, Isaho Kamata, Hidekazu Tsuchida, Hideyuki Uehigashi, Hiroaki Fujibayashi, Masami Naito, Kazukuni Hara, Takahiro Kozawa, Hirofumi Aoki
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Publication number: 20180374721Abstract: A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.Type: ApplicationFiled: August 31, 2018Publication date: December 27, 2018Inventors: Kunihiko Suzuki, Naohisa Ikeya, Keisuke Fukada, Masahiko Ito, Isaho Kamata, Hidekazu Tsuchida, Hiroaki Fujibayashi, Hideyuki Uehigashi, Masami Naito, Kazukuni Hara, Hirofumi Aoki, Takahiro Kozawa
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Publication number: 20170345658Abstract: A method for manufacturing a SiC epitaxial wafer according to one aspect of the present invention includes separately introducing, into a reaction space for SiC epitaxial growth, a basic N-based gas composed of molecules containing an N atom within the molecular structure but having neither a double bond nor a triple bond between nitrogen atoms, and a Cl-based gas composed of molecules containing a Cl atom within the molecular structure, and mixing the N-based gas and the Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and the Cl-based gas.Type: ApplicationFiled: December 8, 2015Publication date: November 30, 2017Applicants: SHOWA DENKO K.K., Central Research Institute of Electric Power IndustryInventors: Keisuke FUKADA, Masahiko ITO, Isaho KAMATA, Hidekazu TSUCHIDA, Hideyuki UEHIGASHI, Hiroaki FUJIBAYASHI, Masami NAITO, Kazukuni HARA, Takahiro KOZAWA, Hirofumi AOKI
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Patent number: 9337276Abstract: A silicon carbide semiconductor device includes a junction barrier Schottky diode including a substrate, a drift layer, an insulating film, a Schottky barrier diode, and a plurality of second conductivity type layers. The Schottky barrier diode includes a Schottky electrode and an ohmic electrode. A PN diode is configured by the plurality of second conductivity type layers and the drift layer, and the plurality of second conductivity type layers is formed in stripes only in a direction parallel to a rod-shaped stacking fault.Type: GrantFiled: September 12, 2013Date of Patent: May 10, 2016Assignee: DENSO CORPORATIONInventors: Hideyuki Uehigashi, Masami Naito, Tomoo Morino