Patents by Inventor Hideyuki Yoneda

Hideyuki Yoneda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7834402
    Abstract: To strengthen tolerance to radiation. Source and back gate of P-channel transistor P1 are connected to power supply. Gate of the P-channel transistor P1 is connected to input terminal IN. Gate of N1 is connected to IN. Drain of N1 is connected to OUT. Cathode of diode D1 is connected to power supply, anode of D1 being connected to OUT. Cathode of diode D2 is connected to OUT, anode of D2 being grounded. When seen from a direction perpendicular to a substrate on which an inverter circuit is formed, a projection plane of a region of a p+ diffusion layer of D1 includes a projection plane of a region of an n+ diffusion layer of N, and a projection plane of a region of an n+ diffusion layer of the diode D2 includes a projection plane of a region of a p+ diffusion layer of P1.
    Type: Grant
    Filed: May 14, 2007
    Date of Patent: November 16, 2010
    Assignee: NEC Electronics Corporation
    Inventor: Hideyuki Yoneda
  • Publication number: 20070285118
    Abstract: To strengthen tolerance to radiation. Source and back gate of P-channel transistor P1 are connected to power supply. Gate of the P-channel transistor P1 is connected to input terminal IN. Drain of P1 is connected to output terminal OUT. Source and back gate of N-channel transistor N1 are grounded. Gate of N1 is connected to IN. Drain of N1 is connected to OUT. Cathode of diode D1 is connected to power supply, anode of D1 being connected to OUT. Cathode of diode D2 is connected to OUT, anode of D2 being grounded. When seen from a direction perpendicular to a substrate on which an inverter circuit is formed, a projection plane of a region of a p+ diffusion layer 32 of D1 includes a projection plane of a region of an n+ diffusion layer 24 of N1, and a projection plane of a region of an n+ diffusion layer 41 of the diode D2 includes a projection plane of a region of a p+ diffusion layer 14 of P1.
    Type: Application
    Filed: May 14, 2007
    Publication date: December 13, 2007
    Applicant: NEC ELECTRONICS CORPORATION
    Inventor: Hideyuki Yoneda
  • Publication number: 20050264334
    Abstract: A latch circuit includes a first circuit configured to generate a first output signal from a first input signal and to generate a second output signal from a second input signal; and a first logic circuit connected with the first circuit, and configured to generate a first logic output signal in response to the first output signal and to generate a second logic output signal in response to the second output signal. A first threshold of the first circuit when the first output signal is generated from the first input signal and a second threshold of the first circuit when the second output signal is generated from the second input signal are different from each other.
    Type: Application
    Filed: May 26, 2005
    Publication date: December 1, 2005
    Inventor: Hideyuki Yoneda