Abstract: A prosthetic heart valve includes an annular frame that is radially collapsible and expandable between a radially collapsed configuration and a radially expanded configuration. The frame has a plurality of circumferentially extending rows of angled struts, each row of angled struts comprising angled struts arranged in a zig-zag pattern. The prosthetic heart valve further includes a leaflet structure positioned within the frame and secured thereto, and an outer sealing member mounted outside of the frame. The sealing member has an undulating outflow edge portion forming a plurality of triangular projections that are connected to and shaped to correspond to the zig-zag pattern of one of the rows of angled struts. The outer sealing member is sized to fit snugly against the outer surface of the frame when the frame is in the expanded configuration.

Abstract: An integrated circuit device is disclosed that includes a semiconductor substrate and a die attached to the semiconductor substrate. A conductive pillar is connected to at least one of the semiconductor substrate or the die. An overmold is molded onto the semiconductor substrate over the die, and the conductive pillar extends through the overmold.

Abstract: Semiconductor package device, such as wafer-level package semiconductor devices, are described that have pillars for providing electrical interconnectivity. In an implementation, the wafer-level package devices include an integrated circuit chip having at least one pillar formed over the integrated circuit chip. The pillar is configured to provide electrical interconnectivity with the integrated circuit chip. The wafer-level package device also includes an encapsulation structure configured to support the pillar.

Abstract: An integrated circuit device is disclosed that includes a semiconductor substrate and a die attached to the semiconductor substrate. A conductive pillar is connected to at least one of the semiconductor substrate or the die. An overmold is molded onto the semiconductor substrate over the die, and the conductive pillar extends through the overmold.

Abstract: A wafer-level package device and techniques for fabricating the device are described that include a second integrated circuit chip electrically coupled to a base integrated circuit chip, where the second integrated circuit chip is placed on and connected to the base integrated circuit chip between multiple high-standoff peripheral pillars with solder bumps. In implementations, the wafer-level package device that employs example techniques in accordance with the present disclosure includes a base integrated circuit chip, multiple high-standoff peripheral pillars with solder bumps, and a second integrated circuit chip electrically coupled to the base integrated circuit chip and placed on the base integrated circuit chip in the center of an array of high-standoff peripheral pillars with solder bumps.

Abstract: An integrated circuit device is disclosed that includes a semiconductor substrate and a die attached to the semiconductor substrate. A conductive pillar is connected to at least one of the semiconductor substrate or the die. An overmold is molded onto the semiconductor substrate over the die, and the conductive pillar extends through the overmold.

Abstract: Semiconductor package device, such as wafer-level package semiconductor devices, are described that have pillars for providing electrical interconnectivity. In an implementation, the wafer-level package devices include an integrated circuit chip having at least one pillar formed over the integrated circuit chip. The pillar is configured to provide electrical interconnectivity with the integrated circuit chip. The wafer-level package device also includes an encapsulation structure configured to support the pillar.

Abstract: Semiconductor package device, such as wafer-level package semiconductor devices, are described that have pillars for providing electrical interconnectivity. In an implementation, the wafer-level package devices include an integrated circuit chip having at least one pillar formed over the integrated circuit chip. The pillar is configured to provide electrical interconnectivity with the integrated circuit chip. The wafer-level package device also includes an encapsulation structure configured to support the pillar.

Abstract: A wafer-level package device and techniques for fabricating the device are described that include a second integrated circuit chip electrically coupled to a base integrated circuit chip, where the second integrated circuit chip is placed on and connected to the base integrated circuit chip between multiple high-standoff peripheral pillars with solder bumps. In implementations, the wafer-level package device that employs example techniques in accordance with the present disclosure includes a base integrated circuit chip, multiple high-standoff peripheral pillars with solder bumps, and a second integrated circuit chip electrically coupled to the base integrated circuit chip and placed on the base integrated circuit chip in the center of an array of high-standoff peripheral pillars with solder bumps.

Abstract: An integrated circuit device is disclosed that includes a semiconductor substrate and a die attached to the semiconductor substrate. A conductive pillar is connected to at least one of the semiconductor substrate or the die. An overmold is molded onto the semiconductor substrate over the die, and the conductive pillar extends through the overmold.