Abstract: A new method of forming a molybdenum nitride barrier layer by chemical vapor deposition from the precursor bisdiethylamido-bistertbutylimido-molybdenum (BDBTM) as a diffusion barrier for copper metallization is described. Semiconductor device structures are provided in and on a semiconductor substrate. An insulating layer is deposited overlying the sermiconductor device structures. A via opening is etched through the insulating layer to contact one of the semiconductor device structures. A barrier layer of molybdenum nitride is conformally deposited by chemical vapor deposition within the via. A layer of copper is deposited overlying the molybdenum nitride barrier layer wherein the molybdenum nitride barrier layer prevents copper diffusion to complete the copper metallization in the fabrication of an integrated circuit device.

Abstract: A new method of forming a molybdenum nitride barrier layer by chemical vapor deposition from the precursor bisdiethylamido-bistertbutylimido-molybdenum (BDBTM) as a diffusion barrier for copper metallization is described. Semiconductor device structures are provided in and on a semiconductor substrate. An insulating layer is deposited overlying the semiconductor devise structures. A via opening is etched through the insulating layer to contact one of the semiconductor device structures. A barrier layer of molybdenum nitride is conformally deposited by chemical vapor deposition within the via. A layer of copper is deposited overlying the molybdenum nitride barrier layer wherein the molybdenum nitride barrier layer prevents copper diffusion to complete the copper metallization in the fabrication of an integrated circuit device.

Abstract: A process for fabricating a tantalum nitride diffusion barrier for the advanced copper metallization of semiconductor devices is disclosed. The process comprises the steps of first preparing a semiconductor device fabricated over the surface of a silicon substrate having a component with a fabricated contact opening. Before the formation of the copper contact by deposition, the process performs a tantalum nitride low-pressure chemical-vapor-deposition procedure that deposits a layer of tantalum nitride thin film over the surface of the device substrate. After the copper deposition, a photoresist layer is subsequently fabricated for patterning the deposited copper contact and tantalum nitride layers, whereby the deposited thin film of tantalum nitride is patterned to form the thin film as the metallization diffusion barrier for the semiconductor device.