Patents by Inventor Hieronymus Johannus Christiaan Meessen
Hieronymus Johannus Christiaan Meessen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10240250Abstract: A graphoepitaxy template to align a self-assembled block polymer adapted to self-assemble into a 2-D array having parallel rows of discontinuous first domains extending parallel to a first axis, mutually spaced along an orthogonal second axis, and separated by a continuous second domain. The graphoepitaxy template has first and second substantially parallel side walls extending parallel to and defining the first axis and mutually spaced along the second axis to provide a compartment to hold at least one row of discontinuous first domains of the self-assembled block copolymer on the substrate between and parallel to the side walls, and separated therefrom by a continuous second domain. The compartment has a graphoepitaxial nucleation feature arranged to locate at least one of the discontinuous first domains at a specific position within the compartment. Methods for forming the graphoepitaxy template and its use for device lithography are also disclosed.Type: GrantFiled: October 2, 2012Date of Patent: March 26, 2019Assignee: ASML Netherlands B.V.Inventors: Thanh Trung Nguyen, Jozef Maria Finders, Wilhelmus Sebastianus Marcus Maria Ketelaars, Sander Frederik Wuister, Eddy Cornelis Antonius Van der Heijden, Hieronymus Johannus Christiaan Meessen, Roelof Koole, Emiel Peeters, Christianus Martinus Van Heesch, Aurelie Marie Andree Brizard, Henri Marie Joseph Boots, Tamara Druzhinina, Jessica Margaretha De Ruiter
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Patent number: 9367910Abstract: A method and system to analyze various dimensional parameters of a structure, such as a self-assembled block copolymer structure whether formed by graphoepitaxy or chemical epitaxy. The method involves image processing including median filtering and feature detection to determine critical dimension information, and optionally the use of a Hough transform to find periodicity values and to determine placement errors.Type: GrantFiled: January 15, 2013Date of Patent: June 14, 2016Assignee: ASML NETHERLANDS B.V.Inventors: Christianus Martinus Van Heesch, Hieronymus Johannus Christiaan Meessen
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Publication number: 20140363072Abstract: A method and system to analyze various dimensional parameters of a structure, such as a self-assembled block copolymer structure whether formed by graphoepitaxy or chemical epitaxy. The method involves image processing including median filtering and feature detection to determine critical dimension information, and optionally the use of a Hough transform to find periodicity values and to determine placement errors.Type: ApplicationFiled: January 15, 2013Publication date: December 11, 2014Inventors: Christianus Martinus Van Heesch, Hieronymus Johannus Christiaan Meessen
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Publication number: 20140245948Abstract: A graphoepitaxy template to align a self-assembled block polymer adapted to self-assemble into a 2-D array having parallel rows of discontinuous first domains extending parallel to a first axis, mutually spaced along an orthogonal second axis, and separated by a continuous second domain. The graphoepitaxy template has first and second substantially parallel side walls extending parallel to and defining the first axis and mutually spaced along the second axis to provide a compartment to hold at least one row of discontinuous first domains of the self-assembled block copolymer on the substrate between and parallel to the side walls, and separated therefrom by a continuous second domain. The compartment has a graphoepitaxial nucleation feature arranged to locate at least one of the discontinuous first domains at a specific position within the compartment. Methods for forming the graphoepitaxy template and its use for device lithography are also disclosed.Type: ApplicationFiled: October 2, 2012Publication date: September 4, 2014Applicant: ASML Netherlands B.V.Inventors: Thanh Trung Nguyen, Jozef Maria Finders, Wilhelmus Sebastianus Marcus Maria Ketelaars, Sander Frederik Wuister, Eddy Cornelis Antonius Van Der Heijden, Hieronymus Johannus Christiaan Meessen, Roelof Koole, Emiel Peeters, Christianus Martinus Van Heesch, Aurelie Marie Andree Brizard, Henri Marie Joseph Boots, Tamara Druzhinina, Jessica Marggaretha De Ruiter
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Patent number: 8119333Abstract: A method for providing a pattern on a substrate is disclosed. The method includes providing a first pattern in a first layer of photoresist and a first layer of bottom anti-reflective coating material on the substrate, etching the first pattern into the substrate, providing a second layer of photoresist and a second layer of bottom anti-reflective coating material on the substrate, providing a second pattern in the second layers of photoresist and bottom anti-reflective coating material, and etching the second pattern into the substrate, the first and second patterns on the substrate together defining the pattern.Type: GrantFiled: August 6, 2008Date of Patent: February 21, 2012Assignee: ASML Netherlands B.V.Inventors: Eddy Cornelis Antonius Van Der Heijden, Johannes Anna Quaedackers, Dorothea Maria Christina Oorschot, Hieronymus Johannus Christiaan Meessen, Yin Fong Choi
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Publication number: 20110295555Abstract: The present invention relates to a method for determining parameter value related to a lithographic process by which a marker structure has been applied on a product substrate based on obtaining calibration measurement data, with an optical detection apparatus, from a calibration marker structure set on a calibration substrate, including at least one calibration marker structure created using different known values of the parameter. The method further determines a mathematical model by using said known values of said at least one parameter and by employing a regression technique on said calibration measurement data, obtains product measurement data, with said optical detection apparatus, from a product marker structure on the product substrate, with at least one product marker structure being exposed with an unknown value of said at least one parameter.Type: ApplicationFiled: September 15, 2009Publication date: December 1, 2011Applicant: ASML Netherlands B.V.Inventors: Hieronymus Johannus Christiaan Meessen, Christine Corinne Mattheus, Christian Marinus Leewis
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Patent number: 7992115Abstract: A method of measuring overlay between a first structure and a second structure on a substrate is provided. The structures include equidistant elements, such as parallel lines, wherein the equidistant elements of the first and second structure alternate. A design width CD1 of the elements of the first structure is different from a design width CD2 of the elements of the second structure. The difference in design width can be used to identify measurement points having incorrectly measured overlay errors.Type: GrantFiled: October 9, 2008Date of Patent: August 2, 2011Assignee: ASML Netherlands B.V.Inventors: Eddy Cornelis Antonius Van Der Heijden, Johannes Anna Quaedackers, Dorothea Maria Christina Oorschot, Hieronymus Johannus Christiaan Meessen, Yin Fong Choi
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Publication number: 20090148796Abstract: A method for providing a pattern on a substrate is disclosed. The method includes providing a first pattern in a first layer of photoresist and a first layer of bottom anti-reflective coating material on the substrate, etching the first pattern into the substrate, providing a second layer of photoresist and a second layer of bottom anti-reflective coating material on the substrate, providing a second pattern in the second layers of photoresist and bottom anti-reflective coating material, and etching the second pattern into the substrate, the first and second patterns on the substrate together defining the pattern.Type: ApplicationFiled: August 6, 2008Publication date: June 11, 2009Applicant: ASML Netherlands B.V.Inventors: Eddy Cornelis Antonius VAN DER HEIJDEN, Johannes Anna Quaedackers, Dorothea Maria Christina Oorschot, Hieronymus Johannus Christiaan Meessen, Yin Fong Choi
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Publication number: 20090100391Abstract: A method of measuring overlay between a first structure and a second structure on a substrate is provided. The structures include equidistant elements, such as parallel lines, wherein the equidistant elements of the first and second structure alternate. A design width CD1 of the elements of the first structure is different from a design width CD2 of the elements of the second structure. The difference in design width can be used to identify measurement points having incorrectly measured overlay errors.Type: ApplicationFiled: October 9, 2008Publication date: April 16, 2009Applicant: ASML Netherlands B.V.Inventors: Eddy Cornelis Antonius VAN DER HEIJDEN, Johannes Anna Quaedackers, Dorothea Maria Christina Oorschot, Hieronymus Johannus Christiaan Meessen, Yin Fong Choi