Abstract: A method and apparatus is presented for using a pressure control system to monitor a plasma processing system. By monitoring variations in the state of the pressure control system, a fault condition, an erroneous fault condition, or a service condition can be detected. For example, the service condition can include monitoring the accumulation of residue between successive preventative maintenance events.

Abstract: Methods and structures for the fabrication of wrap around and trailing shield structures are disclosed. Seed layers having anti-reflective properties are utilized, eliminating the need to deposit, then remove, traditional inorganic anti-reflection coatings prior to shield plating.

Abstract: Methods and structures for the fabrication of wrap around and trailing shield structures are disclosed. Capped seed layers having a dual layer structure are utilized, improving photo resist adhesion and plated shield adhesion, without the need to deposit, then remove, traditional inorganic anti-reflection coatings prior to shield plating.

Abstract: A method and apparatus for integrating a stair notch and a gap bump at a pole tip in a write head is disclosed. A protective plated layer is formed over the bump to prevent the bump form being damaged during formation of the notch at the pole tip. The flux from the second pole outside of the track will be effectively channeled to the first pole piece under the alumina bump.

Abstract: Embodiments of the present invention pertain to controlling thickness of wafers during electroplating process. Information pertaining to an old current used during an electroplating process of a previous wafer is received. Information pertaining to the thickness of the previous wafer is received. A new current is automatically determined. The new current is to be used during an electroplating process for a new wafer. The new current is determined based on the information pertaining to the old current and the information pertaining to the thickness of the previous wafer.

Abstract: A method of automatically configuring an Advanced Process Control (APC) system for a semiconductor manufacturing environment in which an auto-configuration script is generated for executing an auto-configuration program. The auto-configuration script activates default values for input to the auto-configuration program. The auto-configuration script is executed to generate an enabled parameter file output from the auto-configuration program. The enabled parameter file identifies parameters for statistical process control (SPC) chart generation.

Abstract: A method and system for determining a substrate type during a seasoning process is presented. An optical signal is acquired from a process in a plasma processing system, and the optical signal is compared to a pre-determined threshold value. Depending upon the comparison, the substrate type is determined to be of a correct type, or an incorrect type.

Abstract: A magnetic write head and method of manufacture thereof that has a first pole structure having a notched structure configured with a steep shoulder portion and a narrow vertical notch portion extending from the top of the steep shoulder portion. The write head also includes a second pole structure (P2) that has a very narrow width (track width) and that is self aligned with the narrow vertical notch structure of the first pole structure. The write head provides excellent magnetic properties including a very narrow track width and minimal side writing, while avoiding magnetic saturation of the poles.

Abstract: The present invention discloses a method for the production of sub-micron structures on magnetic materials using electron beam lithography. A subtractive process is disclosed wherein a portion of a magnetic material layer is removed from the substrate using conventional lithography, and the remaining portion of the magnetic material layer is patterned by e-beam lithography. A additive process is also disclosed wherein a thin magnetic seed layer is deposited on the substrate, a portion of which is removed by conventional lithography and replaced with a non-magnetic conducting layer. The remaining portion of magnetic seed layer is patterned by e-beam lithography and the final magnetic structure produced by electroplating.

Abstract: According to an embodiment of the present invention, a material processing systeme (1) including a process tool (10) and a process performance control system (100). The process performance control system (100) includes a process performance controller (55) coupled to the process tool (10), where the process performance controller (55) includes a process performance prediction model (110), a process recipe correction filter (120), a process controller (130), and process performance model correction algorithm (150). The process performance prediction model (110) is configured to receive tool data from a plurality of sensors coupled to process tool (10) and to predict process performance data. The process recipe correction filter (120) is coupled to the process performance prediction model (110) and configured to receive predicted process performance data and generate a process recipe correction for run-to-run process control.

Abstract: A magnetic disk drive head is disclosed including a write head, which includes a P1 layer having a pedestal portion, a gap layer formed on the P1 layer, and a P2 layer formed on the gap layer. The P1 layer includes a shoulder formation having a neck portion and a beveled portion. Also disclosed is a disk drive having a write head with a P1 layer with shoulder formation, and a method for fabricating a write pole for a magnetic recording head having a P1 layer with shoulder formation.

Abstract: One preferred method for use in making a magnetic write head with use of the resist channel shrinking solution includes the steps of forming a first pole piece layer of a first pole piece; forming a gap layer over the first pole piece layer; forming a patterned resist over the first pole piece layer and the gap layer; electroplating a first pedestal portion of a second pole piece over the gap layer within a channel of the patterned resist; forming an oxide layer over the first pedestal portion; applying the resist channel shrinking solution comprising the resist channel shrinking film and the corrosion inhibitors over the patterned resist; baking the resist channel shrinking solution over the patterned resist to thereby reduce a width of the channel; removing the resist channel shrinking solution; electroplating a second pedestal portion of the second pole piece within the reduced-width channel of the patterned resist; removing the patterned resist; and milling the structure.

Abstract: The present invention presents a plasma processing system for etching a layer on a substrate comprising a process chamber, a diagnostic system coupled to the process chamber and configured to measure at least one endpoint signal, and a controller coupled to the diagnostic system and configured to determine in-situ at least one of an etch rate and an etch rate uniformity of the etching from the endpoint signal. Furthermore, an in-situ method of determining an etch property for etching a layer on a substrate in a plasma processing system is presented comprising the steps: providing a thickness of the layer; etching the layer on the substrate; measuring at least one endpoint signal using a diagnostic system coupled to the plasma processing system, wherein the endpoint signal comprises an endpoint transition; and determining the etch rate from a ratio of the thickness to a difference between a time during the endpoint transition and a starting time of the etching.

Abstract: A method and apparatus is presented for using a pressure control system to monitor a plasma processing system. By monitoring variations in the state of the pressure control system, a fault condition, an erroneous fault condition, or a service condition can be detected. For example, the service condition can include monitoring the accumulation of residue between successive preventative maintenance events.

Abstract: A material processing system including a process tool and a process performance prediction system. The performance prediction system includes sensors coupled to the tool to measure tool data and a controller coupled to the sensors to receive tool data, where the controller is configured to predict the process performance for the tool using the tool data. A method for detecting a fault in a material processing system using a process performance prediction model is also provided. The method includes preparing the tool, initiating a process in the tool, and recording tool data to form to a tool data matrix. The method also includes performing a matrix multiplication of the tool data matrix and a correlation matrix to form predicted process performance data, where the correlation matrix includes the performance prediction model, comparing the predicted data with target data, and determining a fault condition of the processing system from the comparing step.

Abstract: The present invention discloses a method for the production of sub-micron structures on magnetic materials using electron beam lithography. A subtractive process is disclosed wherein a portion of a magnetic material layer is removed from the substrate using conventional lithography, and the remaining portion of the magnetic material layer is patterned by e-beam lithography. A additive process is also disclosed wherein a thin magnetic seed layer is deposited on the substrate, a portion of which is removed by conventional lithography and replaced with a non-magnetic conducting layer. The remaining portion of magnetic seed layer is patterned by e-beam lithography and the final magnetic structure produced by electroplating.

Abstract: According to an embodiment of the present invention, a material processing systeme (1) including a process tool (10) and a process performance control system (100). The process performance control system (100) includes a process performance controller (55) coupled to the process tool (10), where the process performance controller (55) includes a process performance prediction model (110), a process recipe correction filter (120), a process controller (130), and process performance model correction algorithm (150). The process performance prediction model (110) is configured to receive tool data from a plurality of sensors coupled to process tool (10) and to predict process performance data. The process recipe correction filter (120) is coupled to the process performance prediction model (110) and configured to receive predicted process performance data and generate a process recipe correction for run-to-run process control.

Abstract: A method and system for determining a substrate type during a seasoning process is presented. An optical signal is acquired from a process in a plasma processing system, and the optical signal is compared to a pre-determined threshold value. Depending upon the comparison, the substrate type is determined to be of a correct type, or an incorrect type.

Abstract: A method of automatically configuring an Advanced Process Control (APC) system for a semiconductor manufacturing environment in which an auto-configuration script is generated for executing an auto-configuration program. The auto-configuration script activates default values for input to the auto-configuration program. The auto-configuration script is executed to generate an enabled parameter file output from the auto-configuration program. The enabled parameter file identifies parameters for statistical process control (SPC) chart generation.

Abstract: A method of monitoring a processing system for processing a substrate during the course of semiconductor manufacturing is described. The method comprises acquiring data from the processing system for a plurality of observations. It further comprises constructing a principal components analysis (PCA) model from the data, wherein a weighting factor is applied to at least one of the data variables in the acquired data. The PCA mode is utilized in conjunction with the acquisition of additional data, and at least one statistical quantity is determined for each additional observation. Upon setting a control limit for the processing system, the at least one statistical quantity is compared with the control limit for each additional observation. When, for example, the at least one statistical quantity exceeds the control limit, a fault for the processing system is detected.