Abstract: A method for forming bumps is disclosed. First, a substrate having an adhesive, a barrier, and a wetting layer thereon is provided. Next, a patterned photoresist is formed on the wetting layer, in which the patterned photoresist includes at least one opening for exposing a portion of the wetting layer. Next, a solder is deposited in the opening, and a stripping process is performed to remove the patterned photoresist. Next, a first etchant is utilized to perform a first etching process for etching a portion of the wetting and barrier layers by utilizing the solder as a mask, in which the first etchant is selected from the group consisting of: sulfuric acid, phosphoric acid, ferric chloride, ammonium persulfate, and potassium monopersulfate. Next, a second etchant is utilized to perform a second etching process removing a portion of the adhesive layer, and a reflow process is performed to form a bump.

Abstract: A method for forming bumps is disclosed. First, a substrate having an adhesive, a barrier, and a wetting layer thereon is provided. Next, a patterned photoresist is formed on the wetting layer, in which the patterned photoresist includes at least one opening for exposing a portion of the wetting layer. Next, a solder is deposited in the opening, and a stripping process is performed to remove the patterned photoresist. Next, a first etchant is utilized to perform a first etching process for etching a portion of the wetting and barrier layers by utilizing the solder as a mask, in which the first etchant is selected from the group consisting of: sulfuric acid, phosphoric acid, ferric chloride, ammonium persulfate, and potassium monopersulfate. Next, a second etchant is utilized to perform a second etching process removing a portion of the adhesive layer, and a reflow process is performed to form a bump.