Abstract: A first magnetic member is provided in a region farther inward than an outer peripheral edge of a first magnetoresistance element. A second magnetoresistance element is provided in a region farther inward than an inner peripheral edge of the first magnetoresistance element and is covered by the first magnetic member or is provided in a region farther outward than the outer peripheral edge of the first magnetoresistance element and is covered by a second magnetic member. A first conductor includes a first base section and a first narrow section. The area of the exterior surface of the first narrow section as viewed from a direction perpendicular to an insulating layer is smaller than that of the first base section. In the first conductor, the first base section and the first narrow section are arranged side by side in the direction perpendicular to the insulating layer.

Abstract: A first conductor includes a first base section and a first narrow section. The area of the exterior surface of the first narrow section as viewed from a direction perpendicular or substantially perpendicular to an insulating layer is smaller than that of the first base section. The first base section and the first narrow section are provided side by side in the direction perpendicular or substantially perpendicular to the insulating layer. A stress relaxer including a material different from that of the first conductor is provided in a region which is surrounded by the exterior surface of the first narrow section and also by the exterior surface of the first base section, as viewed from the direction perpendicular or substantially perpendicular to the insulating layer.

Abstract: A first magnetic member is provided in a region farther inward than an outer peripheral edge of a first magnetoresistance element. A second magnetoresistance element is provided in a region farther inward than an inner peripheral edge of the first magnetoresistance element and is covered by the first magnetic member or is provided in a region farther outward than the outer peripheral edge of the first magnetoresistance element and is covered by a second magnetic member. A first conductor includes a first base section and a first narrow section. The area of the exterior surface of the first narrow section as viewed from a direction perpendicular to an insulating layer is smaller than that of the first base section. In the first conductor, the first base section and the first narrow section are arranged side by side in the direction perpendicular to the insulating layer.

Abstract: A first conductor includes a first base section and a first narrow section. The area of the exterior surface of the first narrow section as viewed from a direction perpendicular or substantially perpendicular to an insulating layer is smaller than that of the first base section. The first base section and the first narrow section are provided side by side in the direction perpendicular or substantially perpendicular to the insulating layer. A stress relaxer including a material different from that of the first conductor is provided in a region which is surrounded by the exterior surface of the first narrow section and also by the exterior surface of the first base section, as viewed from the direction perpendicular or substantially perpendicular to the insulating layer.

Abstract: An elastic wave device includes an elastic wave element which includes a piezoelectric substrate, an IDT electrode, and a pad electrode including a joining layer, a package substrate provided with an electrode land, and a bump electrode which joins the pad electrode and the electrode land. The joining layer includes a first principal surface and a second principal surface, the first principal surface side of the joining layer and the bump electrode are joined together to define a joining portion, and an alloy layer is formed at the joining portion. The thickness of the joining layer is about 2,000 nm or less, the thickness of the alloy layer is about 2,100 nm or less, and the distance from a surface of the alloy layer on the piezoelectric substrate side to the second principal surface of the joining layer is about 1,950 nm or less.

Abstract: An elastic wave device includes an elastic wave element which includes a piezoelectric substrate, an IDT electrode, and a pad electrode including a joining layer, a package substrate provided with an electrode land, and a bump electrode which joins the pad electrode and the electrode land. The joining layer includes a first principal surface and a second principal surface, the first principal surface side of the joining layer and the bump electrode are joined together to define a joining portion, and an alloy layer is formed at the joining portion. The thickness of the joining layer is about 2,000 nm or less, the thickness of the alloy layer is about 2,100 nm or less, and the distance from a surface of the alloy layer on the piezoelectric substrate side to the second principal surface of the joining layer is about 1,950 nm or less.

Abstract: A variable capacitance element includes a piezoelectric substrate, a buffer layer located on the piezoelectric substrate with an orientation, a dielectric layer located on the buffer layer and having a relative dielectric constant that varies in accordance with an applied voltage, and a first electrode and a second electrode arranged to apply an electric field to the dielectric layer.

Abstract: A variable capacitance element includes a piezoelectric substrate, a buffer layer located on the piezoelectric substrate with an orientation, a dielectric layer located on the buffer layer and having a relative dielectric constant that varies in accordance with an applied voltage, and a first electrode and a second electrode arranged to apply an electric field to the dielectric layer.