Patents by Inventor Hikaru AOYAMA

Hikaru AOYAMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200187501
    Abstract: The present invention provides a compound represented by formula (I) or salt thereof (in the formula, A1 and A2 each independently represents a nitrogen atom or the like, B1, B2, B3 and B4 each independently represents a carbon atom or nitrogen atom, X1 represents an unsubstituted or substituted C1-6 alkyl group or the like, n represents a number of X1 and represents an integer of 0-4, R1 represents a halogeno group or the like, R2 represents an unsubstituted or substituted C1-6 alkyl group or the like, m represents a number of the oxide group bonding with the nitrogen atom which does not bond with R2 on the imidazole ring, and represents 0 or 1, R3 represents a hydrogen atom or the like, Ar represents an unsubstituted or substituted C6-10 aryl group.
    Type: Application
    Filed: February 21, 2020
    Publication date: June 18, 2020
    Applicant: Nippon Soda Co., Ltd.
    Inventors: Hikaru Aoyama, Maki MATSUI, Takao IWASA, Kazushige FUJII, Tomomi KOBAYASHI, Keita SAKANISHI
  • Publication number: 20200140414
    Abstract: A compound represented by a formula (I) or a salt thereof: wherein A1 represents CR1 or a nitrogen atom; A2 represents CR2 or a nitrogen atom; A3 represents CR3 or a nitrogen atom, provided that two or more of A1 to A3 do not represent nitrogen atoms at the same time; R1, R2 and R3 each independently represent a hydrogen atom or the like; B1 represents CH or a nitrogen atom; R4 represents a substituted or unsubstituted C1-6 alkyl group or the like; R5 represents a substituted or unsubstituted C1-6 alkylthio group or the like; and R6 represents a substituted or unsubstituted C1-6 alkyl group or the like.
    Type: Application
    Filed: June 22, 2018
    Publication date: May 7, 2020
    Applicant: Nippon Soda Co., Ltd.
    Inventors: Keita SAKANISHI, Hikaru AOYAMA, Norifumi SAKIYAMA, Takao IWASA, Daisuke USHIJIMA, Maki MATSUI
  • Patent number: 10580667
    Abstract: A heat treatment apparatus is provided with two cool chambers, that is, a first cool chamber and a second cool chamber. A semiconductor wafer before treatment is alternately carried into the first cool chamber or the second cool chamber and then transported to a heat treatment part by a transport robot after a nitrogen purge is performed. The semiconductor wafer after being heat-treated in the heat treatment part is alternately transported to the first cool chamber or the second cool chamber to be cooled. A sufficient cooling time is secured for the independent semiconductor wafer, and a reduction in throughput as the whole heat treatment apparatus can be suppressed.
    Type: Grant
    Filed: June 29, 2017
    Date of Patent: March 3, 2020
    Assignee: SCREEN Holdings Co., Ltd.
    Inventors: Takayuki Aoyama, Yasuaki Kondo, Shinji Miyawaki, Shinichi Kato, Kazuhiko Fuse, Hideaki Tanimura, Akitsugu Ueda, Hikaru Kawarazaki, Masashi Furukawa
  • Patent number: 10548316
    Abstract: The present invention provides a compound represented by formula (I), (in the formula, A1 and A2 each independently represents a carbon atom or a nitrogen atom; X1 represents an unsubstituted or substituted C1-6 alkyl group or the like; n represents an integer of 0 to 4; R1 represents an unsubstituted or substituted C1-6 alkylthio group or the like; B1 and B4 each independently represent a carbon atom, a nitrogen atom or the like; R2 and R3 each independently represent a hydrogen atom, a halogeno group or the like; Ar represents an unsubstituted or substituted C6-10 aryl group or the like) or a salt thereof, and a harmful organism control agent including thereof.
    Type: Grant
    Filed: June 17, 2016
    Date of Patent: February 4, 2020
    Assignee: Nippon Soda Co., Ltd.
    Inventors: Hikaru Aoyama, Maki Matsui, Keita Sakanishi, Takao Iwasa, Tomomi Kobayashi, Koichi Hirata
  • Publication number: 20190359588
    Abstract: A compound represented by the following Formula (I) or a salt thereof, as well as a formulation for controlling harmful organisms, and in particular, an insecticidal formulation, a miticidal formulation, a formulation for controlling ectoparasites or a formulation for controlling or killing endoparasites, which contains at least one compound selected from the compounds of Formula (I) and salts thereof as an active ingredient wherein, each of R1 and R2 independently represents a hydrogen atom, a substituted or unsubstituted C1-6 alkyl group, or the like, with the proviso that when R2 represents a hydrogen atom, R1 represents a substituted or unsubstituted C6-10 aryl group or a substituted or unsubstituted 3- to 6-membered heterocyclyl group; R3 represents a C1-6 alkylthio group or the like; each of R4 and R5 independently represents a hydrogen atom, a halogeno group or the like; and Ar represents a substituted or unsubstituted C6-10 aryl group, or a substituted or unsubstituted 5- to 6-membered heteroaryl
    Type: Application
    Filed: December 14, 2017
    Publication date: November 28, 2019
    Applicant: Nippon Soda Co., Ltd.
    Inventors: Keita SAKANISHI, Takao IWASA, Norifumi SAKIYAMA, Hikaru AOYAMA, Tomomi KOBAYASHI
  • Patent number: 10446397
    Abstract: When an insulated gate bipolar transistor is incorporated in a drive circuit of a flash lamp, so that a light emission pattern of the flash lamp is freely defined, a temperature change pattern of a surface of a semiconductor wafer that receives the emission of flash light can be adjusted. The length of diffusion of impurities can be controlled by rising a surface temperature of the semiconductor wafer from a preheating temperature to a diffusion temperature through emission of flash light and maintaining the surface temperature at the diffusion temperature for a time period not shorter than 1 millisecond and not longer than 10 milliseconds. Subsequently, the impurities can be activated by rising the surface temperature of the semiconductor wafer from the diffusion temperature to an activation temperature.
    Type: Grant
    Filed: October 19, 2016
    Date of Patent: October 15, 2019
    Assignee: SCREEN Holdings Co., Ltd.
    Inventors: Takayuki Aoyama, Hikaru Kawarazaki
  • Publication number: 20190311924
    Abstract: Over a front surface of a silicon semiconductor wafer is deposited a high dielectric constant film with a silicon oxide film, serving as an interface layer, provided between the semiconductor wafer and the high dielectric constant film. After a chamber houses the semiconductor wafer, a chamber's pressure is reduced to be lower than atmospheric pressure. Subsequently, a gaseous mixture of ammonia and nitrogen gas is supplied into the chamber to return the pressure to ordinary pressure, and the front surface is irradiated with a flash light, thereby performing post deposition annealing (PDA) on the high dielectric constant film. Since the pressure is reduced once to be lower than atmospheric pressure and then returned to ordinary pressure, a chamber's oxygen concentration is lowered remarkably during the PDA. This restricts an increase in thickness of the silicon oxide film underlying the high dielectric constant film by oxygen taken in during the PDA.
    Type: Application
    Filed: June 25, 2019
    Publication date: October 10, 2019
    Inventors: Takayuki AOYAMA, Hikaru KAWARAZAKI, Masashi FURUKAWA, Shinichi KATO, Kazuhiko FUSE, Hideaki TANIMURA
  • Patent number: 10424483
    Abstract: A metal film is deposited on a front surface of a semiconductor wafer of silicon. After the semiconductor wafer is received in a chamber, the pressure in the chamber is reduced to a pressure lower than atmospheric pressure. Thereafter, nitrogen gas is supplied into the chamber to return the pressure in the chamber to ordinary pressure, and the front surface of the semiconductor wafer is irradiated with a flash of light, so that a silicide that is a compound of the metal film and silicon is formed. The oxygen concentration in the chamber is significantly lowered during the formation of the silicide because the pressure in the chamber is reduced once to the pressure lower than atmospheric pressure and then returned to the ordinary pressure. This suppresses the increase in resistance of the silicide resulting from the entry of oxygen in the atmosphere in the chamber into defects near the interface between the metal film and a base material.
    Type: Grant
    Filed: December 3, 2018
    Date of Patent: September 24, 2019
    Assignee: SCREEN Holdings Co., Ltd.
    Inventors: Takayuki Aoyama, Hikaru Kawarazaki, Masashi Furukawa, Kazuhiko Fuse, Hideaki Tanimura, Shinichi Kato
  • Publication number: 20190185459
    Abstract: A compound represented by Formula (I), or a salt thereof: wherein, R1 represents an unsubstituted or substituted C1-6 alkylthio group, or the like; A1 represents a nitrogen atom or CH; A2 represents a nitrogen atom or CR2; R2 and R3 each independently represents a hydrogen atom, an unsubstituted or substituted C6-10 aryl group, an unsubstituted or substituted 3- to 6-membered heterocyclyl group, or the like; B1 and B2 each independently represents a nitrogen atom or CR5, with the proviso that B1 and B2 do not represent CR5 at the same time, wherein R5 represents a hydrogen atom, an unsubstituted or substituted C1-6 alkyl group, or the like; R4 represents an unsubstituted or substituted C1-6 alkyl group, or the like, and R4 binds to any one of nitrogen atoms forming an imidazole ring or a triazole ring; and Ar represents an unsubstituted or substituted C6-10 aryl group or the like.
    Type: Application
    Filed: September 13, 2017
    Publication date: June 20, 2019
    Applicant: Nippon Soda Co., Ltd.
    Inventors: Keita SAKANISHI, Takao IWASA, Hikaru AOYAMA, Norifumi SAKIYAMA, Daisuke USHIJIMA, Maki MATSUI, Tomomi KOBAYASHI
  • Publication number: 20190164789
    Abstract: A semiconductor wafer to be treated is heated at a first preheating temperature ranging from 100 to 200° C. while a pressure in a chamber housing the semiconductor wafer is reduced to a pressure lower than an atmospheric pressure. After the semiconductor wafer is preheated to increase the temperature into a second preheating temperature ranging from 500 to 700° C. while the pressure in the chamber is restored to a pressure higher than the reduced pressure, a flash lamp emits a flashlight to a surface of the semiconductor wafer. Heating the semiconductor wafer at the first preheating temperature that is a relatively low temperature enables, for example, the moisture absorbed on the surface of the semiconductor wafer in trace amounts to be desorbed from the surface, and also enables the flash heating treatment to be performed with oxygen derived from such absorption removed as much as possible.
    Type: Application
    Filed: April 4, 2017
    Publication date: May 30, 2019
    Inventors: Takayuki AOYAMA, Shinichi KATO, Kazuhiko FUSE, Hikaru KAWARAZAKI, Masashi FURUKAWA, Hideaki TANIMURA, Akitsugu UEDA
  • Publication number: 20180362470
    Abstract: A compound represented by Formula (I), or a salt or N-oxide compound thereof is provided. In Formula (I), A1 to A4 each independently represents a carbon atom or nitrogen atom, X1 represents a C1-6 alkyl group or the like, n represents the number of X1 groups, R1 represents a C1-6 alkylthio group or the like, and D is a group represented by Formula (D-1) or (D-2), and in Formula (D-1) and (D-2), * represents a binding position, Q represents a C1-6 alkyl group or the like, B1 and B2 each independently represents a nitrogen atom or the like, R2 represents a C1-6 alkyl group or the like that is bound to one of the nitrogen atoms in Formula (D-1), B3 and B4 each independently represents a nitrogen atom or carbon atom, R4 represents a C1-6 alkyl group or the like, and m represents the number of R4 groups.
    Type: Application
    Filed: December 15, 2016
    Publication date: December 20, 2018
    Applicant: Nippon Soda Co., Ltd.
    Inventors: Isami Hamamoto, Hikaru AOYAMA, Keita SAKANISHI, Takao IWASA, Tomomi KOBAYASHI
  • Publication number: 20180289006
    Abstract: The present invention provides a compound represented by formula (I) or salt thereof (in the formula, A1 and A2 each independently represents a nitrogen atom or the like, B1, B2, B3 and B4 each independently represents a carbon atom or nitrogen atom, X1 represents an unsubstituted or substituted C1-6 alkyl group or the like, n represents a number of X1 and represents an integer of 0-4, R1 represents a halogeno group or the like, R2 represents an unsubstituted or substituted C1-6 alkyl group or the like, m represents a number of the oxide group bonding with the nitrogen atom which does not bond with R2 on the imidazole ring, and represents 0 or 1, R3 represents a hydrogen atom or the like, Ar represents an unsubstituted or substituted C6-10 aryl group.
    Type: Application
    Filed: June 11, 2018
    Publication date: October 11, 2018
    Applicant: Nippon Soda Co., Ltd.
    Inventors: Hikaru Aoyama, Maki MATSUI, Takao IWASA, Kazushige FUJII, Tomomi KOBAYASHI, Keita SAKANISHI
  • Patent number: 10021880
    Abstract: The present invention provides a compound represented by formula (I) or salt thereof (in the formula, A1 and A2 each independently represents a nitrogen atom or the like, B1, B2, B3 and B4 each independently represents a carbon atom or nitrogen atom, X1 represents an unsubstituted or substituted C1-6 alkyl group or the like, n represents a number of X1 and represents an integer of 0-4, R1 represents a halogeno group or the like, R2 represents an unsubstituted or substituted C1-6 alkyl group or the like, m represents a number of the oxide group bonding with the nitrogen atom which does not bond with R2 on the imidazole ring, and represents 0 or 1, R3 represents a hydrogen atom or the like, Ar represents an unsubstituted or substituted C6-10 aryl group.
    Type: Grant
    Filed: August 11, 2015
    Date of Patent: July 17, 2018
    Assignee: Nippon Soda Co., Ltd.
    Inventors: Hikaru Aoyama, Maki Matsui, Takao Iwasa, Kazushige Fujii, Tomomi Kobayashi, Keita Sakanishi
  • Publication number: 20180160686
    Abstract: The present invention provides a compound represented by formula (I), (in the formula, A1 and A2 each independently represents a carbon atom or a nitrogen atom; X1 represents an unsubstituted or substituted C1-6 alkyl group or the like; n represents an integer of 0 to 4; R1 represents an unsubstituted or substituted C1-6 alkylthio group or the like; B1 and B4 each independently represent a carbon atom, a nitrogen atom or the like; R2 and R3 each independently represent a hydrogen atom, a halogeno group or the like; Ar represents an unsubstituted or substituted C6-10 aryl group or the like) or a salt thereof, and a harmful organism control agent including thereof.
    Type: Application
    Filed: June 17, 2016
    Publication date: June 14, 2018
    Applicant: Nippon Soda Co., Ltd.
    Inventors: Hikaru AOYAMA, Maki MATSUI, Keita SAKANISHI, Takao IWASA, Tomomi KOBAYASHI, Koichi HIRATA
  • Publication number: 20170223958
    Abstract: The present invention provides a compound represented by formula (I) or salt thereof (in the formula, A1 and A2 each independently represents a nitrogen atom or the like, B1, B2, B3 and B4 each independently represents a carbon atom or nitrogen atom, X1 represents an unsubstituted or substituted C1-6 alkyl group or the like, n represents a number of X1 and represents an integer of 0-4, R1 represents a halogeno group or the like, R2 represents an unsubstituted or substituted C1-6 alkyl group or the like, m represents a number of the oxide group bonding with the nitrogen atom which does not bond with R2 on the imidazole ring, and represents 0 or 1, R3 represents a hydrogen atom or the like, Ar represents an unsubstituted or substituted C6-10 aryl group.
    Type: Application
    Filed: August 11, 2015
    Publication date: August 10, 2017
    Applicant: Nippon Soda Co., Ltd.
    Inventors: Hikaru AOYAMA, Maki MATSUI, Takao IWASA, Kazushige FUJII, Tomomi KOBAYASHI, Keita SAKANISHI