Patents by Inventor Hikaru Koyama
Hikaru Koyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11276551Abstract: An inspection device includes a charged particle optical system that includes a charged particle beam source emitting a charged particle beam and plural lenses focusing the charged particle beam on a sample, a detector that detects secondary charged particles emitted by an interaction of the charged particle beam and the sample, and a calculation unit that executes auto-focusing at a time a field of view of the charged particle optical system moves over plural inspection spots, the calculation unit irradiates the charged particle beam to the sample under an optical condition that is obtained by introducing astigmatism of a predetermined specification to an optical condition that is for observing a pattern by the charged particle optical system, and executes the auto-focusing using an image formed from a signal outputted by the detector in detecting the secondary charged particles.Type: GrantFiled: March 19, 2020Date of Patent: March 15, 2022Assignee: HITACHI, LTD.Inventors: Atsuko Shintani, Yasunari Sohda, Noritsugu Takahashi, Hikaru Koyama
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Patent number: 11170332Abstract: A data analysis apparatus generates M (M is an integer of 3 or greater) groups each including data regarding a plurality of units from data where first KPIs and K (K is an integer of 2 or greater) explanatory variables are given by 1:1, generates a second KPI indicating the state of the group based on the values of a plurality of first KPIs included in the group, and selects a feature for the first KPIs based on a correlation analysis between the second KPI of each group and the feature of each group calculated based on the explanatory variables.Type: GrantFiled: October 29, 2018Date of Patent: November 9, 2021Assignee: Hitachi, Ltd.Inventors: Hikaru Koyama, Toshio Okochi, Toshihiro Kujirai
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Publication number: 20200365364Abstract: An inspection device includes a charged particle optical system that includes a charged particle beam source emitting a charged particle beam and plural lenses focusing the charged particle beam on a sample, a detector that detects secondary charged particles emitted by an interaction of the charged particle beam and the sample, and a calculation unit that executes auto-focusing at a time a field of view of the charged particle optical system moves over plural inspection spots, the calculation unit irradiates the charged particle beam to the sample under an optical condition that is obtained by introducing astigmatism of a predetermined specification to an optical condition that is for observing a pattern by the charged particle optical system, and executes the auto-focusing using an image formed from a signal outputted by the detector in detecting the secondary charged particles.Type: ApplicationFiled: March 19, 2020Publication date: November 19, 2020Inventors: Atsuko SHINTANI, Yasunari SOHDA, Noritsugu TAKAHASHI, Hikaru KOYAMA
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Patent number: 10840060Abstract: A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a scanned region is formed by scanning a two-dimensional region on the sample with an electron beam or is provided with a GUI having sample information input means which inputs information relating to the sample and display means which displays a recommended scanning condition according to the input and performs scanning with a scanning line density according to the sample by selecting the recommended scanning condition. As a result, in observation using a scanning electron microscope, a suitable scanning device which can improve contrast of a profile of a two-dimensional pattern and suppress shading by suppressing the influence of charging caused by primary charged particle radiation and by improving a detection rate of secondary electrons and a scanning method are provided.Type: GrantFiled: May 18, 2018Date of Patent: November 17, 2020Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Zhaohui Cheng, Hikaru Koyama, Yoshinobu Kimura, Hiroyuki Shinada, Osamu Komuro
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Publication number: 20200328101Abstract: A search apparatus receives each input of a target value and a reference value indicated by the target value; generates a prediction model indicating a relation between the condition and the result based on a setting value of the condition inside the search area and a measured value of the result; acquires a prediction value from the prediction model by assigning the target value to the prediction model and specifies a presence area of the prediction value from the search area; determines whether the prediction value is closer to the target value than the reference value; sets the measured value of the result corresponding to the prediction value to the reference value when the prediction value is closer to the target value, and sets the prediction value presence area to the search area; and outputs a prediction value satisfying an achievement condition when the prediction value satisfies the achievement condition.Type: ApplicationFiled: June 25, 2020Publication date: October 15, 2020Inventors: Takeshi OHMORI, Junichi TANAKA, Hikaru KOYAMA, Masaru KURIHARA
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Patent number: 10734261Abstract: A search apparatus receives an input target value, which indicates a condition to be set in a semiconductor processing apparatus or a result obtained by processing the semiconductor using the processing apparatus, a reference value of the condition inside a search area, and the result, wherein the reference value is indicated by the target value. A prediction model indicating a relation between the condition and the result based on a setting value of the condition inside the search area is generated and, a measured value of the result is obtained. A prediction value is acquired by assigning the target value to the prediction model. The prediction value is set to the reference value when it is determined that the prediction value is closer to the target value, and a prediction value satisfying an achievement condition is set when the prediction value satisfies the achievement condition of the target value.Type: GrantFiled: July 25, 2017Date of Patent: August 4, 2020Assignee: HITACHI, LTD.Inventors: Takeshi Ohmori, Junichi Tanaka, Hikaru Koyama, Masaru Kurihara
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Publication number: 20190164101Abstract: A data analysis apparatus generates M (M is an integer of 3 or greater) groups each including data regarding a plurality of units from data where first KPIs and K (K is an integer of 2 or greater) explanatory variables are given by 1:1, generates a second KPI indicating the state of the group based on the values of a plurality of first KPIs included in the group, and selects a feature for the first KPIs based on a correlation analysis between the second KPI of each group and the feature of each group calculated based on the explanatory variables.Type: ApplicationFiled: October 29, 2018Publication date: May 30, 2019Inventors: Hikaru KOYAMA, Toshio OKOCHI, Toshihiro KUJIRAI
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Publication number: 20180269032Abstract: A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a scanned region is formed by scanning a two-dimensional region on the sample with an electron beam or is provided with a GUI having sample information input means which inputs information relating to the sample and display means which displays a recommended scanning condition according to the input and performs scanning with a scanning line density according to the sample by selecting the recommended scanning condition. As a result, in observation using a scanning electron microscope, a suitable scanning device which can improve contrast of a profile of a two-dimensional pattern and suppress shading by suppressing the influence of charging caused by primary charged particle radiation and by improving a detection rate of secondary electrons and a scanning method are provided.Type: ApplicationFiled: May 18, 2018Publication date: September 20, 2018Inventors: Zhaohui CHENG, Hikaru KOYAMA, Yoshinobu KIMURA, Hiroyuki SHINADA, Osamu KOMURO
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Patent number: 9991092Abstract: A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a scanned region is formed by scanning a two-dimensional region on the sample with an electron beam or is provided with a GUI having sample information input means which inputs information relating to the sample and display means which displays a recommended scanning conditioHn according to the input and performs scanning with a scanning line density according to the sample by selecting the recommended scanning condition. As a result, in observation using a scanning electron microscope, a suitable scanning device which can improve contrast of a profile of a two-dimensional pattern and suppress shading by suppressing the influence of charging caused by primary charged particle radiation and by improving a detection rate of secondary electrons and a scanning method are provided.Type: GrantFiled: July 30, 2010Date of Patent: June 5, 2018Assignee: Hitachi High-Technologies CorporationInventors: Zhaohui Cheng, Hikaru Koyama, Yoshinobu Kimura, Hiroyuki Shinada, Osamu Komuro
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Publication number: 20180082873Abstract: A search apparatus receives an input target value, which indicates a condition to be set in a semiconductor processing apparatus or a result obtained by processing the semiconductor using the processing apparatus, a reference value of the condition inside a search area, and the result, wherein the reference value is indicated by the target value. A prediction model indicating a relation between the condition and the result based on a setting value of the condition inside the search area is generated and, a measured value of the result is obtained. A prediction value is acquired by assigning the target value to the prediction model. The prediction value is set to the reference value when it is determined that the prediction value is closer to the target value, and a prediction value satisfying an achievement condition is set when the prediction value satisfies the achievement condition of the target value.Type: ApplicationFiled: July 25, 2017Publication date: March 22, 2018Inventors: Takeshi OHMORI, Junichi TANAKA, Hikaru KOYAMA, Masaru KURIHARA
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Publication number: 20150371825Abstract: A plasma processing apparatus in which high frequency power to generate plasma supplied from a high frequency power supply is introduced into a processing chamber via a top plate and a shower plate and a member to be processed mounted on a stage electrode is processed, wherein a grounded spacer whose base material is a metal is installed between the shower. plate and an inner cylinder.Type: ApplicationFiled: February 20, 2015Publication date: December 24, 2015Inventors: Hiroyuki Kobayashi, Makoto Nawata, Hikaru Koyama, Kazuyuki Ikenaga
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Publication number: 20120153145Abstract: A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a scanned region is formed by scanning a two-dimensional region on the sample with an electron beam or is provided with a GUI having sample information input means which inputs information relating to the sample and display means which displays a recommended scanning condition according to the input and performs scanning with a scanning line density according to the sample by selecting the recommended scanning condition. As a result, in observation using a scanning electron microscope, a suitable scanning device which can improve contrast of a profile of a two-dimensional pattern and suppress shading by suppressing the influence of charging caused by primary charged particle radiation and by improving a detection rate of secondary electrons and a scanning method are provided.Type: ApplicationFiled: July 30, 2010Publication date: June 21, 2012Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Zhaohui Cheng, Hikaru Koyama, Yoshinobu Kimura, Hiroyuki Shinada, Osamu Komuro
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Patent number: 7655906Abstract: An inspection and measurement method and apparatus for semiconductor devices and patterns such as photomasks using an electron beam capable of measuring the potential of a sample with higher precision than conventional systems. When an S curve is observed in a semiconductor device to be inspected, fluctuations of the potential of the inspection sample surface are suppressed by optimizing the energy of a primary electron beam used for irradiation. When the surface potential of the semiconductor device is measured, a more precise measurement can be obtained without adverse effects from an insulation film surface. Further, the surface potential can be measured without installing a special apparatus for wafer surface potential measurement such as an energy filter, so the cost of the apparatus can be reduced.Type: GrantFiled: August 15, 2006Date of Patent: February 2, 2010Assignee: Hitachi High-Technologies CorporationInventors: Zhaohui Cheng, Hiroshi Makino, Hikaru Koyama, Mitsugu Sato
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Patent number: 7652248Abstract: When performing an inspection using a charge control function in a SEM wafer inspection apparatus, acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by “acceleration voltage?deceleration voltage” and bias voltage determined by “deceleration voltage?control voltage” do not change. By this means, charge of a wafer can be controlled, while restraining electrostatic lens effect generated near a control electrode. As a result, an inspection using a charge control function at low incident energy and in a wide viewing field can be performed, and a highly sensitive inspection of semiconductor patterns subject to damages due to electron beam irradiation can be realized. Acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by “acceleration voltage?deceleration voltage” and bias voltage determined by “deceleration voltage?control voltage” do not change.Type: GrantFiled: March 28, 2007Date of Patent: January 26, 2010Assignee: Hitachi High-Technologies CorporationInventors: Hiroshi Makino, Kenji Tanimoto, Zhaohui Cheng, Hikaru Koyama
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Patent number: 7547884Abstract: In the present invention, the structure of an electrification control electrode is changed from a grid type to a slit type and thereby shadows are not formed when a wafer is irradiated with a beam. Further, a beam forming slit is disposed ahead of an electrification control slit, thus the electrification control slit is prevented from being irradiated with an electron beam for preliminary electrification, and thereby secondary electrons which disturb the control of the electrification are inhibited from being generated. The shape of the slit is designed so that the strength of an electron beam may gradually decrease toward both the ends of an electron beam irradiation region in the longitudinal direction thereof. Furthermore, a preliminary static eliminator to remove or reduce the unevenness in an electrification potential distribution which has undesirably been formed earlier is disposed.Type: GrantFiled: June 9, 2006Date of Patent: June 16, 2009Assignee: Hitachi High-Technologies CorporationInventors: Masaki Hasegawa, Hiroshi Makino, Hikaru Koyama, Zhaohui Cheng, Hisaya Murakoshi
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Patent number: 7501625Abstract: A charge control electrode emitting photoelectrons is disposed just above a wafer (sample) in parallel thereto, and the electrode has a through hole so that ultraviolet light can be irradiated to the wafer through the charge control electrode. Specifically, a metal plate which is formed in mesh or includes one or plural holes is used as the charge control electrode. By disposing the charge control electrode just above the sample in parallel thereto, when negative voltage is applied to the electrode, electric field approximately perpendicular to the wafer is generated. Therefore, photoelectrons are efficiently absorbed in the wafer. Also, by using the charge control electrode having approximately the same size as that of the wafer, charges on a whole surface of the wafer can be removed collectively and uniformly. Therefore, time required for the process can be reduced.Type: GrantFiled: May 30, 2006Date of Patent: March 10, 2009Assignee: Hitachi High-Technologies CorporationInventors: Hikaru Koyama, Hiroshi Makino, Mitsugu Sato
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Publication number: 20070228276Abstract: When performing an inspection using a charge control function in a SEM wafer inspection apparatus, acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by “acceleration voltage?deceleration voltage” and bias voltage determined by “deceleration voltage?control voltage” do not change. By this means, charge of a wafer can be controlled, while restraining electrostatic lens effect generated near a control electrode. As a result, an inspection using a charge control function at low incident energy and in a wide viewing field can be performed, and a highly sensitive inspection of semiconductor patterns subject to damages due to electron beam irradiation can be realized. Acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by “acceleration voltage?deceleration voltage” and bias voltage determined by “deceleration voltage?control voltage” do not change.Type: ApplicationFiled: March 28, 2007Publication date: October 4, 2007Inventors: HIROSHI MAKINO, Kenji Tanimoto, Zhaohui Cheng, Hikaru Koyama
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Patent number: 7276693Abstract: A scanning electron microscope or inspection system includes a sample stage on which a sample such as a wafer is loaded, an electro optical unit to scan an electron beam to the sample, and a charge control electrode to which voltage for controlling a charged state of the sample is applied. Further, there is provided an ultraviolet irradiation device for irradiating ultraviolet light onto the sample, a retarding electric source to apply a retarding voltage to the sample stage or the sample, and a detection unit for detecting secondary electrons or backscattering electrons generated in response to the scan of the electron beam. A monitoring unit for displaying an image of the sample or an inspection unit for inspection of the sample is provided which effects display or inspection based on signals from the detection unit.Type: GrantFiled: March 15, 2006Date of Patent: October 2, 2007Assignee: Hitachi High-Technologies CorporationInventors: Hikaru Koyama, Hidetoshi Nishiyama, Mari Nozoe
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Publication number: 20070085005Abstract: In the present invention, the structure of an electrification control electrode is changed from a grid type to a slit type and thereby shadows are not formed when a wafer is irradiated with a beam. Further, a beam forming slit is disposed ahead of an electrification control slit, thus the electrification control slit is prevented from being irradiated with an electron beam for preliminary electrification, and thereby secondary electrons which disturb the control of the electrification are inhibited from being generated. The shape of the slit is designed so that the strength of an electron beam may gradually decrease toward both the ends of an electron beam irradiation region in the longitudinal direction thereof. Furthermore, a preliminary static eliminator to remove or reduce the unevenness in an electrification potential distribution which has undesirably been formed earlier is disposed.Type: ApplicationFiled: June 9, 2006Publication date: April 19, 2007Inventors: Masaki Hasegawa, Hiroshi Makino, Hikaru Koyama, Zhaohui Cheng, Hisaya Murakoshi
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Publication number: 20070040118Abstract: A inspecting and measurement method and inspecting and measurement apparatus for semiconductor devices and patterns such as photomasks using an electron beam which can measure the charged potential of a sample with higher precision than in the prior art, and a inspecting and measurement apparatus which can measure charged potential by means of a simple construction. When an S curve is observed in a semiconductor device to be inspectioned and measured, fluctuations of the charged potential of the inspection sample surface are suppressed by optimizing the energy of a primary electron beam used for irradiation. When the surface potential of the semiconductor device is measured, a more precise potential measurement than that of the prior art can be performed which is almost unaffected by the charged potential of an insulation film surface.Type: ApplicationFiled: August 15, 2006Publication date: February 22, 2007Inventors: Zhaohui Cheng, Hiroshi Makino, Hikaru Koyama, Mitsugu Sato