Abstract: A memory chip includes: a memory region; a chip determining unit configured to perform a chip determination, in writing operation, to determine whether or not the memory region is a writing target on the basis of an inputted address of writing destination, and to output a determination result of the chip determination; an address-cycle identifying unit configured to detect a final cycle of the address of writing destination, and to output a detection result at a timing before the output of the determination result; and a buffer controller configured to switch an input buffer from one state to another on the basis of the determination result, wherein the buffer controller keeps the input buffer in an active state irrespective of the determination result of the chip determination while the address-cycle identifying unit is outputting the detection result.

Abstract: A memory chip includes: a memory region; a chip determining unit configured to perform a chip determination, in writing operation, to determine whether or not the memory region is a writing target on the basis of an inputted address of writing destination, and to output a determination result of the chip determination; an address-cycle identifying unit configured to detect a final cycle of the address of writing destination, and to output a detection result at a timing before the output of the determination result; and a buffer controller configured to switch an input buffer from one state to another on the basis of the determination result, wherein the buffer controller keeps the input buffer in an active state irrespective of the determination result of the chip determination while the address-cycle identifying unit is outputting the detection result.

Abstract: 1. A semiconductor storage device has a first MOS transistor connected at a first end thereof to a power supply and diode-connected; a second MOS transistor connected in parallel with the first MOS transistor; a memory cell connected between the second end of the first MOS transistor and ground, the memory cell capable of adjusting a current flowing through the memory cell; a third MOS transistor connected at a first end thereof to the power supply, and diode-connected; a fourth MOS transistor connected in parallel with the third MOS transistor; a fifth MOS transistor connected between the second end of the fourth MOS transistor and the ground and supplied at a gate thereof with the first reference voltage; and an amplifier circuit which compares the sense voltage with the comparison voltage, and which outputs a comparison result signal depending upon a result of the comparison.