Abstract: A resist underlayer film-forming composition exhibiting high etching resistance, high heat resistance, and excellent coatability; a resist underlayer film obtained using the resist underlayer film-forming composition and a method for producing the same; a method for forming a resist pattern; and a method for producing a semiconductor device. A resist underlayer film-forming composition including a polymer and a compound represented by Formula (1) as a solvent. In Formula (1), R1, R2, and R3 in Formula (1) each independently represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, which may be interrupted by an oxygen atom, a sulfur atom, or an amide bond, and R1, R2, and R3 may be the same or different and may bond to each other to form a ring structure.

Abstract: A resist underlayer film-forming composition: in which self-curing is performed at a low temperature without an acid catalyst or a crosslinking agent, the amount of a sublimate can be reduced, and a high-hardness film having high bending resistance; suitable as a crosslinking agent; exhibits higher flattening and heat resistance when used as a crosslinking agent; has embedding properties equivalent to conventional products; and has an optical constant or etching resistance freely changeable according to monomer selection. The composition contains a solvent and a polymer (X) containing a repeating structural unit which is obtained by alternately bonding, via a linking group —O—, an aromatic compound A having an ROCH2— group (R is a monovalent organic group, a hydrogen atom, or a mixture thereof) to an aromatic compound B having at most 120 carbon atoms and different from A, and in which one to six B's are bonded to one A.

Abstract: A composition for forming a resist underlayer film includes: a solvent; and a polymer containing a unit structure (A) represented by formula (1). The composition is reduced in the amount of sublimated substances that contaminate a device, is improved in the in-plane uniform coatability of a film to be coated thereon, exhibits satisfactory resistance to a chemical solution used in a resist under layer film, and can exhibit other satisfactory properties.

Abstract: A resist underlayer film-forming composition exhibiting high etching resistance, high heat resistance, and excellent coatability; a resist underlayer film obtained using the resist underlayer film-forming composition and a method for producing the same; a method for forming a resist pattern; and a method for producing a semiconductor device. A resist underlayer film-forming composition including a polymer and a compound represented by Formula (1) as a solvent. In Formula (1), R1, R2, and R3 in Formula (1) each independently represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, which may be interrupted by an oxygen atom, a sulfur atom, or an amide bond, and R1, R2, and R3 may be the same or different and may bond to each other to form a ring structure.

Abstract: A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1): wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B1 and B2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B1 and B2 optionally form a ring with a carbon atom bonded to B1 and B2.

Abstract: A composition for forming a resist underlayer film containing a solvent and polymer comprising a unit structure (A) represented by formula (1) and/or formula (2). The composition is capable of forming a hydrophobic underlayer film that has a high contact angle with pure water and exhibits high adhesion to an upper layer film, thereby being not susceptible to separation therefrom, while meeting the requirement of good coatability, the composition being also capable of exhibiting other good characteristics such as sufficient resistance to a chemical agent that is used for resist underlayer films.

Abstract: A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1): wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B1 and B2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B1 and B2 optionally form a ring with a carbon atom bonded to B1 and B2.

Abstract: A photocurable composition for forming coating film having flattening properties on a substrate, with high fillability into patterns and capability of forming a coating film that is free from thermal shrinkage, which contains at least one compound that contains a photodegradable nitrogen-containing and/or photodegradable sulfur-containing structure, a hydrocarbon structure, and a solvent. The compound may have the photodegradable nitrogen-containing and/or photodegradable sulfur-containing structure and the hydrocarbon structure in one molecule, or may be a combination of compounds which contain the structures in separate molecules.

Abstract: A resist underlayer film forming composition capable of forming a flat film that exhibits high etching resistance, a good dry etching rate ratio and a good optical constant, while having good coverage even with respect to a so-called multileveled substrate and having a small difference in the film thickness after embedding. Also, a method for producing a polymer that is suitable for the resist underlayer film forming composition; a resist underlayer film which uses the resist underlayer film forming composition; and a method for producing a semiconductor device. This resist underlayer film forming composition contains: a reaction product of an aromatic compound (A) that has from 6 to 120 carbon atoms, and a compound that is represented by formula (1); and a solvent.

Abstract: A photocurable composition for forming coating film having flattening properties on a substrate, with high fillability into patterns and capability of forming a coating film that is free from thermal shrinkage, which contains at least one compound that contains a photodegradable nitrogen-containing and/or sulfur-containing structure, a hydrocarbon structure, and a solvent. A compound which contains at least one photodegradable structure in one molecule. A compound which contains the photodegradable structures, and the hydrocarbon structure in one molecule, or a combination of compounds which contain the structures in separate molecules. The hydrocarbon structure is a saturated or unsaturated, linear, branched or cyclic hydrocarbon group having a carbon atom number of 1 to 40.

Abstract: A stepped substrate coating composition for forming a coating film having planarity on a substrate, including: a main agent and a solvent, the main agent containing a compound (A), a compound (B), or a mixture thereof, the compound (A) having a partial structure Formula (A-1) or (A-2): and the compound (B) having at least one partial structure selected from Formulae (B-1)-(B-5), or having a partial structure including a combination of a partial structure of Formula (B-6) and a partial structure of Formula (B-7) or (B-8): where the composition is cured by photoirradiation or by heating at 30° C.-300° C.; and the amount of the main agent in the solid content of the composition is 95%-100% by mass.

Abstract: Provided is a novel composition for forming a resist underlayer film. This composition for forming a resist underlayer film includes a polymer (X) and a solvent, the polymer (X) containing: a plurality of structural units which are the same as or different from each other and have a methoxymethyl group and a ROCH2- group (R is a monovalent organic group, a hydrogen atom, or a mixture thereof) other than the methoxymethyl group; and a linking group that links the more than one structural unit.

Abstract: A method for producing a coated substrate includes applying a photocurable silicon-containing coating film-forming composition to an uneven substrate; and exposing the photocurable silicon-containing coating film-forming composition to light, wherein the photocurable silicon-containing coating film-forming composition comprises a hydrolyzable silane, a hydrolysate thereof, or a hydrolytic condensate thereof, wherein the hydrolyzable silane is a hydrolyzable silane of the following Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) wherein R1 is a functional group relating to photocrosslinking; R2 is an alkyl group and is bonded to a silicon atom via an Si—C bond; R3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3.

Abstract: A composition for forming resist underlayer film for nanoimprinting includes novolac resin that has a repeating unit structure represented by formula (1). In formula (1), group A represents organic group having an aromatic ring, a condensed aromatic ring, or a condensed aromatic heterocycle, group B represents organic group having an aromatic ring or a condensed aromatic ring, group E represents a single bond or a branched or straight-chain C1-10 alkylene group that may be substituted and may include an ether bond and/or a carbonyl group, group D represents organic group that has 1 to 15 carbon atoms and is represented by formula (2) (in which R1, R2, and R3 each independently represent a fluorine atom, or a straight-chain, branched-chain, or cyclic alkyl group, and any two of R1, R2, and R3 may be bonded to one another to form a ring), and n represents a number from 1 to 5.

Abstract: A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1): wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B1 and B2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B1 and B2 optionally form a ring with a carbon atom bonded to B1 and B.

Abstract: Provided are: a resist underlayer film formation composition combining high etching resistance, high heat resistance, and excellent coating properties; a resist underlayer film in which the resist underlayer film formation composition is used and a method for manufacturing the resist underlayer film; a method for forming a resist pattern; and a method for manufacturing a semiconductor device. The resist underlayer film formation composition is characterized by including the compound represented by Formula (1), or a polymer derived from the compound represented by Formula (1) (where: AA represents a single bond or a double bond; X1 represents —N(R1)—; X2 represents —N(R2)—; X3 represents —CH(R3)—; X4 represents —CH(R4)— etc.; R1, R2, R3, and R4 represent hydrogen atoms, C1-20 straight chain, branched, or cyclic alkyl groups, etc.; R5, R6, R9, and R10 represent hydrogen atoms, hydroxy groups, alkyl groups, etc.; R7 and R8 represent benzene rings or naphthalene rings; and n and o are 0 or 1).

Abstract: A composition for forming a resist underlayer film includes: (A) a crosslinkable compound represented by formula (I) and (D) a solvent. [In the formula, n is an integer of 2-6, the n-number of Z each independently are monovalent organic groups including a mono-, di-, tri-, tetra-, penta-, or hexaformylaryl group, the n-number of A each independently represent —OCH2CH(OH)CH2O— or (BB), and T is an n-valent hydrocarbon group and/or repeating unit of a polymer optionally having at least one group selected from the group made of a hydroxy group, an epoxy group, an acyl group, an acetyl group, a benzoyl group, a carboxy group, a carbonyl group, an amino group, an imino group, a cyano group, an azo group, an azide group, a thiol group, a sulfo group, and an allyl group and optionally interrupted by a carbonyl group and/or an oxygen atom.

Abstract: A stepped substrate-coating composition for forming a coating film having filling property of a pattern and flattening property including a compound (E) having a partial structure (I) and a partial structure (II) having a hydroxy group formed by a reaction of an epoxy group with a proton-generating compound, a solvent (F), and a crosslinkable compound (H), wherein the partial structure (I) is from Formulae (1-1) to (1-5) or including a partial structure of Formula (1-6) combined with a partial structure of Formula (1-7) or (1-8), and the partial structure (II) is of the following Formula (2-1) or (2-2), wherein the compound (E) contains the epoxy and hydroxy group at a molar ratio (epoxy group)/(hydroxy group) of 0 or more and 0.5 or less, and contains the partial structure (II) so the molar ratio (partial structure (II))/(partial structure (I)+partial structure (II)) is 0.01 or more and 0.8 or less.

Abstract: A composition having a multi-level substrate coating composition for forming a coating film having a filling onto a pattern and planarization, wherein the composition includes a compound (A) serving as a main agent, and a solvent, wherein the compound (A) forms the following Formula (A-1), (A-2) and (A-3); In Formulas (A-1), (A-2) and (A-3), a broken line is a bond to the aromatic ring; the aromatic ring forming a polymer skeleton or forming a monomer; and n is an integer of 1 or 2; A chain line is a bond to a carbon chain, alicyclic carbon ring, or aromatic ring forming a polymer skeleton; Q is a single bond, or an organic group having an ether bond, an ester bond, a urethane bond, a C1-3 alkylene bond, or an amide bond; m is 1; and Formula (A-3) does not include Formula (A-1), and the composition is cured photoirradiation or heating.

Abstract: There are provided a plasma-curable multi-level substrate coating film-forming composition for forming a coating film having planarity on a substrate, wherein the composition can fill a pattern sufficiently.