Abstract: A method and an apparatus for plasma etching semiconductor materials by providing an intermediate electrode between the electrodes in a parallel state type plasma etching apparatus, moving the intermediate electrode by a drive mechanism, and continuously changing from a condition of high input power and high self-bias voltage to a condition of low input power and low self-bias voltage while varying the distance between the intermediate electrode and the first electrode and the RF power, thereby to remove damage or deposits that may have been formed on the surface when the semiconductor material was being subjected to processing.