Abstract: In an embodiment a method for calibrating temperature sensors includes arranging devices-under-test (DUTs) in a sealable and thermally isolated chamber of a calibration arrangement such that each of the DUTs is in proximity to, associated to and in thermal contact with at least one of a number of reference samples, controlling the calibration arrangement to thermalize the DUTs and the reference samples to a temperature set point and generating, based on a temperature-dependent quantity, a set of measurement signals for each of the DUTs, wherein each set of measurement signals comprises a test measurement signal from a distinct one of the DUTs and a reference measurement signal from each of an associated at least one of the reference samples.

Abstract: A calibration arrangement has a sealable and thermally-isolated chamber comprising a socket mount having a number of reference samples in thermal contact with the socket mount and a number of sample sockets for devices-under test, DUTs, with each sample socket being arranged in proximity to and associated to at least one of the reference samples. The arrangement further comprises a thermal chuck and a circuit board, which is configured to provide electrical connection to the reference samples in the socket mount and DUTs in the sample sockets. The thermal chuck is configured to thermalize the socket mount and the circuit board to a temperature set point.

Abstract: A monolithic sensor arrangement, a manufacturing method and a measurement method are disclosed. In an embodiment a monolithic gas sensor arrangement includes a sensor including a first transducer with a first sensitive layer and a second transducer with a second sensitive layer, and a readout circuit configured to generate a first measurement signal and a second measurement signal depending on the first and second transducers, wherein the sensor arrangement is a humidity sensor arrangement, wherein the first and second sensitive layers are configured to absorb water molecules, and wherein the first and second sensitive layers differ from each other in at least one property.

Abstract: In an embodiment a sensor device include a first sensor including a heating element configured to heat up the first sensor in a controllable manner and a second sensor thermally coupled to the heating element of the first sensor such that the heating element is further configured to heat up the second sensor in a controllable manner.

Abstract: A calibration arrangement has a sealable and thermally-isolated chamber comprising a socket mount having a number of reference samples in thermal contact with the socket mount and a number of sample sockets for devices-under test, DUTs, with each sample socket being arranged in proximity to and associated to at least one of the reference samples. The arrangement further comprises a thermal chuck and a circuit board, which is configured to provide electrical connection to the reference samples in the socket mount and DUTs in the sample sockets. The thermal chuck is configured to thermalize the socket mount and the circuit board to a temperature set point.

Abstract: A monolithic sensor arrangement, a manufacturing method and a measurement method are disclosed. In an embodiment a monolithic gas sensor arrangement includes a sensor including a first transducer with a first sensitive layer and a second transducer with a second sensitive layer, and a readout circuit configured to generate a first measurement signal and a second measurement signal depending on the first and second transducers, wherein the sensor arrangement is a humidity sensor arrangement, wherein the first and second sensitive layers are configured to absorb water molecules, and wherein the first and second sensitive layers differ from each other in at least one property.

Abstract: A sensor arrangement (10) comprises a capacitive sensor (11) with a first electrode line (12), a second electrode line (16) and a third electrode line (20) and a sensitive layer (30) arranged at the first, the second and the third electrode line (12, 16, 20). The sensor arrangement (10) comprises a readout circuit (50) that comprises a capacitance-to-digital converter (51), is coupled to the first, the second and the third electrode line (12, 16, 20) and is configured to generate a first measurement signal (S1) using the first and the second electrode line (12, 16) and a second measurement signal (S2) using at least the third electrode line (20).

Abstract: The sensor semiconductor device comprises a substrate (1) with a main surface (2), a sensor region (3) on or above the main surface, a coating layer (4) above the main surface, and a trench (5) formed in the coating layer around the sensor region. The trench provides drainage of a liquid from the coating layer.

Abstract: A capacitive environmental sensor and a method for determining the presence of a target substance (e.g. water) using differential capacitive measurements. The sensor includes a semiconductor substrate having a surface. The sensor also includes a plurality of sensor electrodes located on the surface. The electrodes are laterally separated on the surface by intervening spaces. The sensor further includes a sensor layer covering the electrodes. The sensor layer has a permittivity that is sensitive to the presence of the target substance. The surface of the substrate, in a space separating at least one pair of electrodes, includes a recess. The surface of the substrate, in a space separating at least one pair of electrodes, does not include a recess. The sensor may be provided in a Radio Frequency Identification (RFID) tag. The sensor may be provided in a smart building.

Abstract: A sensor arrangement (10) comprises a capacitive sensor (11) with a first electrode line (12), a second electrode line (16) and a third electrode line (20) and a sensitive layer (30) arranged at the first, the second and the third electrode line (12, 16, 20). The sensor arrangement (10) comprises a readout circuit (50) that comprises a capacitance-to-digital converter (51), is coupled to the first, the second and the third electrode line (12, 16, 20) and is configured to generate a first measurement signal (S1) using the first and the second electrode line (12, 16) and a second measurement signal (S2) using at least the third electrode line (20).

Abstract: The sensor semiconductor device comprises a substrate (1) with a main surface (2), a sensor region (3) on or above the main surface, a coating layer (4) above the main surface, and a trench (5) formed in the coating layer around the sensor region. The trench provides drainage of a liquid from the coating layer.

Abstract: A method for providing an integrated circuit such that first and second sensing electrodes respectively have at their surfaces first and second receptor molecules for selectively binding to first and second analytes of interest; exposing the integrated circuit to a sample potentially comprising at least one of the first and second analytes, providing a first bead having a first electrical signature attached to a first molecule having a conformation/affinity for binding to the first sensing electrode dependent on the presence of the first analyte; providing a second bead having a second electrical signature attached to a second molecule having a conformation/affinity for binding to the second sensing electrode dependent on the presence of the second analyte; and determining the presence of the electrical signature of the first and/or second bead(s) on the first and second sensing electrodes respectively. An IC for implementing this method.

Abstract: One example discloses a multi-sensor assembly, comprising: a first temperature sensor, having a first thermal profile; a second temperature sensor, having a second thermal profile different from the first thermal profile; wherein the first and second temperature sensors are mounted on a set of lead-frames; wherein the first and second temperature sensors include a first heat path input coupled to an ambient environment, and a second heat path input coupled to at least one of the lead-frames; and wherein the first and second sensors and set of lead-frames are included in a single multi-sensor assembly. Another example discloses a method of manufacture for the multi-sensor assembly.

Abstract: A capacitive environmental sensor and a method for determining the presence of a target substance (e.g. water) using differential capacitive measurements. The sensor includes a semiconductor substrate having a surface. The sensor also includes a plurality of sensor electrodes located on the surface. The electrodes are laterally separated on the surface by intervening spaces. The sensor further includes a sensor layer covering the electrodes. The sensor layer has a permittivity that is sensitive to the presence of the target substance. The surface of the substrate, in a space separating at least one pair of electrodes, includes a recess. The surface of the substrate, in a space separating at least one pair of electrodes, does not include a recess. The sensor may be provided in a Radio Frequency Identification (RFID) tag. The sensor may be provided in a smart building.

Abstract: One example discloses a multi-sensor assembly, comprising: a first temperature sensor, having a first thermal profile; a second temperature sensor, having a second thermal profile different from the first thermal profile; wherein the first and second temperature sensors are mounted on a set of lead-frames; wherein the first and second temperature sensors include a first heat path input coupled to an ambient environment, and a second heat path input coupled to at least one of the lead-frames; and wherein the first and second sensors and set of lead-frames are included in a single multi-sensor assembly. Another example discloses a method of manufacture for the multi-sensor assembly.

Abstract: The present invention provides a capacitive MEMS device comprising a first electrode lying in a plane, and a second electrode suspended above the first electrode and movable with respect to the first electrode. The first electrode functions as an actuation electrode. A gap is present between the first electrode and the second electrode. A third electrode is placed intermediate the first and second electrode with the gap between the third electrode and the second electrode. The third electrode has one or a plurality of holes therein, preferably in an orderly or irregular array. An aspect of the present invention integration of a conductive, e.g. metallic grating as a middle (or third) electrode. An advantage of the present invention is that it can reduce at least one problem of the prior art. This advantage allows an independent control over the pull-in and release voltage of a switch.

Abstract: A MEMS switch in which at least first, second and third signal lines are provided over the substrate, which each terminate at a connection region. A lower actuation electrode arrangement is over the substrate. A movable contact electrode is suspended over the connection regions for making or breaking electrical contact between at least two of the three connection regions and an upper actuation electrode provided over the lower actuation electrode. The use of three of more signal lines enables a symmetrical actuation force to be achieved or enables multiple switch functions to be implemented by the single movable electrode, or both.

Abstract: A MEMS device comprises first and second opposing electrode arrangements (22,28), wherein the second electrode arrangement (28) is electrically movable to vary the electrode spacing between facing sides of the first and second electrode arrangements. At least one of the facing sides has a non-flat surface with at least one peak and at least one trough. The height of the peak and depth of the trough is between 0.01t and 0.1t where t is the thickness of the movable electrode.

Abstract: A MEMS switch (1, 81), and methods of fabricating thereof, the switch comprising: a sealed cavity (24); and a membrane (26); wherein the sealed cavity (24) is defined in part by the membrane (26); and the membrane is a 5 metallic membrane (26), for example consisting of a single type of metal or metal alloy. The MEMS switch (1, 81) may comprise a top electrode (30), for example extending into the cavity (24), located in a hole (32) in the metallic membrane (26). Fabrication may include providing a sacrificial layer (22) in a partly defined cavity (24). The bending stiffness of the membrane (26) may be 10 higher along an RF line (102) than along a line (104) perpendicular to the RF line (102), for example by virtue of the cavity (24) being elliptical.

Abstract: A MEMS switch comprises a substrate, first and second signal lines over the substrate, which each terminate at a connection region, a lower actuation electrode over the substrate and movable contact electrode suspended over the connection regions of the first and second signal lines. An upper actuation electrode is provided over the lower actuation electrode. The connection regions of the first and second signal lines are at a first height from the substrate, wherein signal line portions extending from the connection regions are at a lower height from the substrate, and the lower actuation electrode is provided over the lower height signal line portions, so that the lower height signal line portions are buried. The area available for the actuation electrodes becomes larger and undesired forces and interference are reduced.