Patents by Inventor Hildegard Inge Maier, heiress

Hildegard Inge Maier, heiress has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for producing high-resistance silicon carbide
    Patent number: 5856231
    Abstract: A process for producing high-resistance SiC from low-resistance SiC starting material. The flat (shallow) donor levels of a prevailing nitrogen impurity are overcompensated by admixture of a trivalent doping element with the concentration of the doping element in the SiC being such that it changes the conductivity type from a n-conductivity to a p-conductivity. In addition, a transition element is added having donor levels approximately in the middle of the SiC energy gap, so that the excess acceptor levels are in turn compensated and a high specific resistance is achieved.
    Type: Grant
    Filed: April 12, 1996
    Date of Patent: January 5, 1999
    Assignee: Daimler-Benz Aktiengesellschaft
    Inventors: Ekkehard Niemann, Juergen Schneider, Harald Mueller, Karin Maier, deceased, Hildegard Inge Maier, heiress, Elke Maier, heiress