Patents by Inventor Hilke Donohue

Hilke Donohue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Depositing a tantalum film
    Patent number: 7129161
    Abstract: This invention relates to a method of depositing a tantalum film in which ?-Ta dominates and to methods of electroplating copper using such films. The films have a thickness of less than 300 nm and are formed by depositing a seed layer of an organic containing low dielectric constant insulating layer and sputtering tantalum onto the seed layer at a temperature below 250° C.
    Type: Grant
    Filed: July 15, 2002
    Date of Patent: October 31, 2006
    Assignee: Trikon Holdings Limited
    Inventor: Hilke Donohue
  • Depositing a tantalum film
    Publication number: 20050048775
    Abstract: This invention relates to a method of depositing a tantalum film in which ?-Ta dominates and to methods of electroplating copper using such films. The films have a thickness of less than 300 nm and are formed by depositing a seed layer of an organic containing low dielectric constant insulating layer and sputtering tantalum onto the seed layer at a temperature below 250° C.
    Type: Application
    Filed: July 15, 2002
    Publication date: March 3, 2005
    Inventor: Hilke Donohue
  • Barrier layer and method of depositing a barrier layer
    Patent number: 6860975
    Abstract: A barrier layer is deposited on a substrate having a recess by sputtering tantalum in a nitrogen atmosphere. A flow of the nitrogen is selected to deposit mixed phase bcc/?Ta, and sputter ions are sufficiently energetic to cause re-sputtering of deposited material from the base of the recess to its sidewall or sidewalls.
    Type: Grant
    Filed: February 19, 2003
    Date of Patent: March 1, 2005
    Assignee: Trikon Technologies Limited
    Inventors: Hilke Donohue, Stephen Robert Burgess
  • Barrier layer and method of depositing a barrier layer
    Publication number: 20030162391
    Abstract: A barrier layer is deposited on a substrate having a recess by sputtering tantalum in a nitrogen atmosphere. A flow of the nitrogen is selected to deposit mixed phase bcc/&bgr;Ta, and sputter ions are sufficiently energetic to cause re-sputtering of deposited material from the base of the recess to its sidewall or sidewalls.
    Type: Application
    Filed: February 19, 2003
    Publication date: August 28, 2003
    Inventors: Hilke Donohue, Stephen Robert Burgess
  • Methods of sputtering using krypton
    Publication number: 20030024808
    Abstract: A method of sputtering a layer from a target having a plurality of recesses or openings includes using Krypton as a sputtering gas and is characterized in that the gas flow is less than 20 sccm and or the Krypton pressure is less than 1 militor.
    Type: Application
    Filed: August 21, 2002
    Publication date: February 6, 2003
    Inventors: Hilke Donohue, Mark Graeme Martin Harris