Abstract: A method is provided for producing an electrically conductive contact on a rear face and/or front face of a solar cell. The method interconnects solar cells in a cost-effective manner and ensures that cell damage, which leads to a reduction in power, is avoided. The rear face and/or front face of the solar cell is treated in the region of the contact and, after the treatment in the region, a pasty adhesive or an adhesive tape is applied in strips.

Abstract: A method and an apparatus for detecting cracks in semiconductor substrates, such as silicon wafers and solar cells, are provided. The method and apparatus are based on the detection of light deflected at a crack.

Abstract: A method is provided for producing an electrically conductive contact on a rear face and/or front face of a solar cell. The method interconnects solar cells in a cost-effective manner and ensures that cell damage, which leads to a reduction in power, is avoided. The rear face and/or front face of the solar cell is treated in the region of the contact and, after the treatment in the region, a pasty adhesive or an adhesive tape is applied in strips.

Abstract: A method for producing a solar cell that has a semiconductor substrate of a first conductivity type. The method includes producing a plurality of passage openings, creating a layer of a conductivity type opposite the first conductivity type along a front side, producing a front-side contact in the form of a metallization and a back-side contact. Electrically conductive front-side contact areas bound the passage openings on the front side and are formed when the front-side contact is formed. The passage openings are provided with an electrically insulating first layer on the inside, and an electrically conductive material is subsequently introduced, starting from a back side, through the passage openings up to the front-side contact areas while back-side contact areas are simultaneously formed.

Abstract: A solar cell is provided that includes a semiconductor substrate with a front-side contact and a rear-side contact. The front-side contact includes contact fingers running parallel to one another and at least one busbar running transversely with respect thereto. A connector runs along the busbar and is cohesively connected thereto. In order to avoid cracking in the event of forces acting on the connector, the busbar includes sections that have soldering edges and over which the connector extends.

Abstract: The invention concerns a method and an apparatus for the application of solder onto a work piece, wherein the solder is soldered on at a soldering temperature TL and subject to the influence of ultrasound. In order to be able to solder without difficulties the solder onto work pieces that exhibit sensitivity to breakage it is proposed that the solder is heated, is applied to the work piece that is supported in particular in a spring-mounted manner, and is soldered-on subject to the influence of ultrasound.

Abstract: The invention concerns a method and an apparatus for the application of solder onto a work piece, wherein the solder is soldered on at a soldering temperature TL and subject to the influence of ultrasound. In order to be able to solder without difficulties the solder onto work pieces that exhibit sensitivity to breakage it is proposed that the solder is heated, is applied to the work piece that is supported in particular in a spring-mounted manner, and is soldered-on subject to the influence of ultrasound.

Abstract: The invention relates to a method for the cohesive connection of a first element (16, 18) to a second element (10), wherein the elements are located one on the other during the connection process and are connected by means of a solder material which is subjected to ultrasonic vibrations during connection by means of a tool (32, 34). In order to allow cohesive connection in an energy-efficient manner, it is proposed that the first element (16, 18) used is one which has through-passage openings (28, 30), that for the purpose of connection the first element and the second element (10) are placed one on the other with through-passage openings open towards the second element, and that molten solder material is located in the through-passage openings during connection and in the through-passage openings the molten solder material is subjected to the ultrasonic vibrations.

Abstract: The invention relates to a method for connecting solder-coated connection leads (3) made of aluminium or an aluminium alloy having a 0.2% yield strength of less than 120 N/mm2 to photovoltaic solar cells (7, 7a, 7b, 7c) which have metallizations on the upper side and the lower side, by a soldering method such as IR soldering, inductive soldering, thermal contact soldering, ultrasonic soldering or hot air soldering. The metallizations of the solar cells can be precoated with solder. A further solder material (2a, 2b) can be arranged between the connection lead (3) and the metallization of the solar cell (7, 7a, 7b, 7c). The solar cells (7, 7a, 7b, 7c) are connected in series with one another by this procedure.

Abstract: A semiconductor component including a first layer (10) of a semiconductor material as a substrate, a second layer (12) running on said first layer (10), and at least two intermediate layers (14, 16) made of the materials of the first and second layers running between the first and second layer, where the first intermediate layer (16) facing the second layer (12) may contain a eutectic mixture (18) made of the materials of the first and second layers. The invention is also directed to an electroconductive contact (15, 15a, 15b) forming an electroconductive connection to the first layer and originating at or running through the second layer, as well as to a method for producing the metal-semiconductor contact.

Abstract: The invention relates to a method and an apparatus for detecting cracks in semiconductor substrates, such as silicon wafers and solar cells. The method and apparatus are based on the detection of light deflected at a crack.

Abstract: A cutting mill for crushing broken polycrystalline needle-shaped silicon material, which contains particles that have an aspect ratio of AI with 5<AI ?30, and/or broken Si wafer consisting of laminar particles, wherein the cutting mill has an interior space that is lined with silicon and/or plastic, wherein the cutting mill has a rotational body configured as a multi-sided column, wherein said rotational body, in the regions facing the interior space of the cutting mill, is lined with silicon or features silicon, and wherein blades which run parallel with the longitudinal edges of the rotational body and are disposed in the rotational area of the rotational body, are arranged in the interior space of the cutting mill, and are adjustable with respect to the rotational body.

Abstract: A method and a device for introducing solder onto a solar cell is provided. The method and device employ a solder wire introduced in the molten state onto the solar cell under the action of ultrasonic vibrations applied by a sonotrode. Solder is introduced very precisely onto the solar cell, without subjecting the solar cell to undesirably high temperatures, by introducing the solder wire into a gap running between a heating device and the sonotrode, which applies ultrasonic vibrations and melts and flows through the gap onto the solar cell.

Abstract: The invention concerns a method and an apparatus for the application of solder onto a work piece, wherein the solder is soldered on at a soldering temperature TL and subject to the influence of ultrasound. In order to be able to solder without difficulties the solder onto work pieces that exhibit sensitivity to breakage it is proposed that the solder is heated, is applied to the work piece that is supported in particular in a spring-mounted manner, and is soldered-on subject to the influence of ultrasound.

Abstract: The invention relates to a method and a device for screening first particles out of a granulate comprised of first and second particles by conveying the granulate along a first screen surface which extends outward from a vibrating device, wherein the first particles have an aspect ratio a1, with a1>3:1, and the dimensions of the second particles allow them to fall through the mesh of the first screen surface.

Abstract: A soldered connection between an outer surface of a semiconductor device, connected to a substrate by means of an adhesive layer, and a connector in the form of a strip. In order that tensile forces acting on the connector do not cause the semiconductor device to become detached from the substrate or the adhesive layer, it is proposed that a supporting location extends from the outer surface of the semiconductor device, which supporting location is formed of solderable material and makes contact with the outer surface by way of a contact surface A, in or on which the connector is soldered while maintaining a distance a from the outer surface where a?10?; and/or that the distance b between the edge of the contact surface between the supporting surface and the outer surface and the entry of the connector into the supporting location or the beginning of contact therebetween is b?50?.

Abstract: Method for constructing a line or dotted structure on a support, especially for constructing strip-like electrically conducting contacts on a semiconductor component such as a solar cell, by applying an electrically conducting paste-like substance containing a solvent adhering to a support and subsequent hardening of the substance. After the substance is applied to the support, a medium containing a polar molecule is applied on the support and/or the substance, through which the solvent contained in the substance is extracted.

Abstract: A method for recovering and/or recycling starting silicon material by crushing the starting material. The recovered or recycled material is melted, and crystals, e.g. as a silicon block, tube, or strip, are grown from the obtained melt. To use starting materials that have a high aspect ratio to be able to convey the same without any problem, broken polycrystalline needle-shaped Si material (material I) containing particles having an aspect ratio AI, 5<AI?30, is used as a starting material. Material I is crushed so that the crushed particles (material II) have an aspect ratio AII<3. Alternatively, a broken Si wafer is used that is composed of laminar particles which are crushed so that the crushed particles (material III) have an aspect ratio AIII<3.

Abstract: A method for recovering and/or recycling starting silicon material by crushing the starting material. The recovered or recycled material is melted, and crystals, e.g. as a silicon block, tube, or strip, are grown from the obtained melt. To use starting materials that have a high aspect ratio to be able to convey the same without any problem, broken polycrystalline needle-shaped Si material (material I) containing particles having an aspect ratio AI, 5<A1?30, is used as a starting material. Material I is crushed so that the crushed particles (material II) have an aspect ratio AII<3. Alternatively, a broken Si wafer is used that is composed of laminar particles which are crushed so that the crushed particles (material III) have an aspect ratio AIII<3.

Abstract: A method for recovering and/or recycling starting silicon material by crushing the starting material. The recovered or recycled material is melted, and crystals, e.g. as a silicon block, tube, or strip, are grown from the obtained melt. To use starting materials that have a high aspect ratio to be able to convey the same without any problem, broken polycrystalline needle-shaped Si material (material I) containing particles having an aspect ratio AI, 5<A1?30, is used as a starting material. Material I is crushed so that the crushed particles (material II) have an aspect ratio AII<3. Alternatively, a broken Si wafer is used that is composed of laminar particles which are crushed so that the crushed particles (material III) have an aspect ratio AIII<3.