Abstract: The present invention relates to plane-parallel structures of silicon/silicon oxide (silicon/silicon oxide flakes), obtainable by heating plane-parallel structures of SiOy in an oxygen-free atmosphere at a temperature above 400° C., wherein 0.70?y?1.8, or plane-parallel structures of silicon/silicon oxide, obtainable by heating plane-parallel structures of SiOx in an oxygen-free atmosphere at a temperature above 400° C., wherein 0.03?x?0.95, a process for their production and their use for the production of interference pigments.

Abstract: A product produced in a PVD method is described, which consists of thin plane-parallel structures having a thickness in the range from 20 to 2000 nm and small dimensions in the range below one mm. Production is carried out by condensation of silicon suboxide onto a carrier passing by way of the vaporisers. The carrier is pre-coated, before condensation of the silicon suboxide, with a soluble, inorganic or organic separating agent in a PVD method. All steps, including that of detaching the product by dissolution, can be carried out continuously and simultaneously at different locations. As final step, the SiOy may be oxidised to SiO2 in an oxygen-containing gas at atmospheric pressure and temperatures of more than 200° C. or SiOy may be converted to SiC at the surface of the plane-parallel structures in a carbon-containing gas at from 500° C. to 1500° C. The products produced in that manner are distinguished by high uniformity of thickness.

Abstract: A new method is proposed for the production of plane-parallel platelets, comprising the steps a) vapor-deposition, at a pressure below atmospheric pressure, of a separating agent onto a carrier to produce a separating agent layer, b) vapor-deposition, at a pressure below atmospheric pressure, of at least one product layer onto the separating agent layer, c) dissolution of the separating agent layer in a solvent and production of a suspension in which the at least one product layer is present in the form of plane-parallel platelets, in which method the separating agent is selected from the group consisting of anthracene, anthraquinone, acetamidophenol, acetylsalicylic acid, camphoric anhydride, benzimidazole, benzene-1,2,4-tricarboxylic acid, biphenyl-2,2-dicarboxylic acid, bis(4-hydroxyphenyl)-sulfone, dihydroxyanthraquinone, hydantoin, 3-hydroxybenzoic acid, 8-hydroxyquinoline-5-sulfonic acid monohydrate, 4-hydroxycoumarin, 7-hydroxycoumarin, 3-hydroxynaphthalene-2-carboxylic acid, isophthalic acid, 4,4-meth

Abstract: The present invention relates to plane-parallel structures of silicon/silicon oxide (silicon/silicon oxide flakes), obtainable by heating plane-parallel structures of SiOy in an oxygen-free atmosphere at a temperature above 400° C., wherein 0.70?y?1.8, or plane-parallel structures of silicon/silicon oxide, obtainable by heating plane-parallel structures of SiOx in an oxygen-free atmosphere at a temperature above 400° C., wherein 0.03?x?0.95, a process for their production and their use for the production of interference pigments.

Abstract: A product produced in a PVD method is described, which consists of thin plane-parallel structures having a thickness in the range from 20 to 2000 nm and small dimensions in the range below one mm. Production is carried out by condensation of silicon suboxide onto a carrier passing by way of the vaporisers. The carrier is pre-coated, before condensation of the silicon suboxide, with a soluble, inorganic or organic separating agent in a PVD method. All steps, including that of detaching the product by dissolution, can be carried out continuously and simultaneously at different locations. As final step, the SiOy may be oxidised to SiO2 in an oxygen-containing gas at atmospheric pressure and temperatures of more than 200° C. or SiOy may be converted to SiC at the surface of the plane-parallel structures in a carbon-containing gas at from 500° C. to 1500° C. The products produced in that manner are distinguished by high uniformity of thickness.

Abstract: A new method is proposed for the production of plane-parallel platelets, comprising the steps a) vapour-deposition, at a pressure below atmospheric pressure, of a separating agent onto a carrier to produce a separating agent layer, b) vapour-deposition, at a pressure below atmospheric pressure, of at least one product layer onto the separating agent layer, c) dissolution of the separating agent layer in a solvent and production of a suspension in which the at least one product layer is present in the form of plane-parallel platelets, in which method the separating agent is selected from the group consisting of anthracene, anthraquinone, acetamidophenol, acetylsalicylic acid, camphoric anhydride, benzimidazole, benzene-1,2,4-tricarboxylic acid, biphenyl-2,2-dicarboxylic acid, bis(4-hydroxyphenyl)-sulfone, dihydroxyanthraquinone, hydantoin, 3-hydroxybenzoic acid, 8-hydroxyquinoline-5-sulfonic acid monohydrate, 4-hydroxycoumarin, 7-hydroxycoumarin, 3-hydroxynaphthalene-2-carboxylic acid, isophthalic acid, 4,4-me

Abstract: A device for heating a material to an evaporation temperature so that the material can be coated on a substrate is provided which includes a series evaporator for containing the material to be coated. There is also provided a plurality of radiant heaters disposed above the evaporator and the material to be evaporated, the heaters each being essentially flat and disposed parallel and adjacent to the upper surface of the material. Heat shields are also disposed above the radiant heaters and below a substrate to be coated and have an area sufficient to prevent direct radiant heat contact with the substrate to be coated. A plurality of vapor outlet openings are formed between each adjacent heat shield of the series evaporator and face the substrate to be coated. The outlets are in vapor communication with the material being evaporated. Each of the radiant heaters are located beneath an upper heat shield and within the area protected by the heat shields.