Abstract: A light-emitting device may include an active layer. The light-emitting device may include a first semiconductor layer of a first conductivity type. The first semiconductor layer may be in physical contact with the active layer. The light-emitting device may also include a second semiconductor layer of a second conductivity type. The second semiconductor layer may be in physical contact with the active layer and opposite the first conductive layer. The light-emitting device may further include a first electrode in physical contact with a first side of the first semiconductor layer. The light-emitting device may additionally include a second electrode in physical contact with a second side of the first semiconductor layer. The second side of the first semiconductor layer may be different from the first side of the first semiconductor layer. The light-emitting device may also include a third electrode in physical contact with the second semiconductor layer.

Abstract: An optical element includes a plurality of nanowires disposed in the form of an array and a light emitting material disposed on the nanowires, where the nanowires are longitudinally aligned in the array to linearly polarize at least a portion of light emitted from the light emitting material, and an electronic device includes the optical element.

Abstract: The present invention generally relates to an extraction structure for a UV lighting element. The present invention also relates to a UV lamp comprising such an extraction structure onto a substrate. The extraction structure comprises a plurality of nanostructures for anti-reflecting purposes. The nanostructures are grown on the top surface of at least one of the first and second side of the substrate.

Abstract: A photoluminescent polarizer including: a base having a first surface, a second surface opposite to the first surface, and a plurality of grid elements disposed on the first surface; wherein a grid element includes a first lateral face, a second lateral face, and at least one photoluminescent unit stack disposed on at least one of the first lateral face and the second lateral face, wherein the first lateral face is angled away from a line perpendicular to the first surface of the base and the second lateral face angled toward the first lateral face and away from the line, wherein the photoluminescent unit stack is disposed on at least one of the first lateral face and/or to the second lateral face, wherein the photoluminescent unit stack comprises a light emitting film and a metal film, the metal film disposed on a surface of the light emitting film.

Abstract: An optical element includes a plurality of nanowires disposed in the form of an array and a light emitting material disposed on the nanowires, where the nanowires are longitudinally aligned in the array to linearly polarize at least a portion of light emitted from the light emitting material, and an electronic device includes the optical element.

Abstract: The present invention generally relates to a field emission light source and specifically to a miniaturized field emission light source that is possible to manufacture in large volumes at low cost using the concept of wafer level manufacturing, i.e. a similar approach as used by IC's and MEMS. The invention also relates to a lighting arrangement comprising at least one field emission light source.

Abstract: The present invention relates to a photocatalytic nanocomposite material, wherein the realization of the optimal wavelength for optical activation is controlled and accordingly is designed to work together with a LED operating at the wavelength for yielding the maximum efficiency.

Abstract: Vertical high power LEDs are the technological choice for the application of general lighting due to their advantages of high efficiency and capability of handling high power. However, the technologies of vertical LED fabrication reported so far involve the wafer-level metal substrate substitution which may cause large stress due to the mismatch between metal substrate and LED layer. Moreover, the metal substrate has to be diced to separate LED dies which may cause metal contamination and thus increase the leakage current. These factors will lower the yield of LED production and increase the cost as well. The present invention is to disclose a novel method for the fabrication of GaN vertical high power LEDs and/or a novel method for the fabrication of GaN vertical high power LEDs which is compatible to mass production conditions. The novelty of the invention is that the island metal plating is conducted with the help of pattern formation techniques.

Abstract: A wireless strain sensing device uses a plurality of wireless sensors to obtain individual local strain data on the spot (area) where the wireless sensor is disposed on a stress member using a specific frequency response that is scanned externally. The resonance frequency shifts accordance with the locally applied strain on the specific point of the stress member. The change in the resonance frequency in response to the local strain can then be allocated within a limited spectral range for each of the wireless sensors. This permits a plurality of wireless sensors, each having a different initial resonance frequency, to be read concurrently and distinguished.

Abstract: A light-emitting device may include an active layer. The light-emitting device may include a first semiconductor layer of a first conductivity type. The first semiconductor layer may be in physical contact with the active layer. The light-emitting device may also include a second semiconductor layer of a second conductivity type. The second semiconductor layer may be in physical contact with the active layer and opposite the first conductive layer. The light-emitting device may further include a first electrode in physical contact with a first side of the first semiconductor layer. The light-emitting device may additionally include a second electrode in physical contact with a second side of the first semiconductor layer. The second side of the first semiconductor layer may be different from the first side of the first semiconductor layer. The light-emitting device may also include a third electrode in physical contact with the second semiconductor layer.

Abstract: The invention relates generally to perovskite materials, and in particular, to perovskite thin films having large crystalline grains. Methods of forming the perovskite thin films are disclosed herein. The perovskite thin films find particular use in photovoltaic applications.

Abstract: Electronic devices, apparatus, systems, and methods of operating and constructing the devices, apparatus, and/or systems include a wireless sensor configured to measure strain of hardware, which can be implanted in a subject. In various embodiments, temporal measurement of the hardware strain includes monitoring changes of the resonant frequency of the sensor. The sensor can be realized as an inductively powered device that operates as an all-on-chip resonator, where the components of the sensor are biocompatible. Additional apparatus, systems, and methods are disclosed.

Abstract: This invention is related to a functional inorganic-organic hybrid nanocomposite structured with boron. With the present invention, a nanosized material is obtained with enhanced UV and Visible region activity wherein metal-oxide nanoparticle combinations with boron compounds are used.

Abstract: A light emitting device comprising a plurality of current spreading layers including a first P doped layer, a first N doped layer and a second P doped layer, wherein the N doped layer having a doping level and thickness configured for substantial depletion or full depletion.

Abstract: According to one embodiment, an organic light emitting device is described including a first light emitting unit, a second light emitting unit and a charge generation layer wherein the second light emitting unit is stacked over the first light emitting unit and is connected to the first light emitting unit by means of the charge generation layer and wherein the charge generation layer includes an electron transport layer, a transition metal oxide layer arranged over the electron transport layer and a diffusion suppressing layer arranged between the electron transport layer and the transition metal oxide layer to separate the electron transport layer from the transition metal oxide layer.

Abstract: Electronic devices, apparatus, systems, and methods of operating and constructing the devices, apparatus, and/or systems include a wireless sensor configured to measure strain of hardware implanted in a subject. In various embodiments, temporal measurement of the hardware strain includes monitoring changes of the resonant frequency of the sensor. The sensor can be realized as an inductively powered device that operates as an all-on-chip resonator, where the components of the sensor are biocompatible. Additional apparatus, systems, and methods are disclosed.

Abstract: A light-emitting device comprising: a hole injection layer, an electron injection layer, and a composite emitter layer including a soft material exciton donor and exciton acceptor nanoparticles substantially dispersed within the exciton donor matrix, wherein electrons from the electron injection layer and holes from the hole injection layer generate excitons in the exciton donor matrix, and the primary mechanism of photon generation at the nanoparticles is substantially through non-radiative energy transfer of the generated excitons directly into the nanoparticles.

Abstract: Embodiments of the present invention address the problems with previously known MRI enhancement resonators. The embodiments provide capacitances that are sufficiently large to result in resonance frequencies that are sufficiently low for medical MRI applications in devices that are sufficiently small for implantation into the body. Further, the capacitance and resonance frequency of the MRI enhancement resonator may be easily adjusted to particular desired values by selecting corresponding thin-film dielectrics, or thicknesses of such thin-film dielectrics. Moreover, the design and geometry of the embodiments provide MRI enhancement resonators with high Q-factors. The construction and material of such MRI enhancement resonators also yield flexible and biocompatible devices that are appropriate for applications involving implantation into the body.

Abstract: An optical element includes a plurality of nanowires disposed in the form of an array and a light emitting material disposed on the nanowires, where the nanowires are longitudinally aligned in the array to linearly polarize at least a portion of light emitted from the light emitting material, and an electronic device includes the optical element.

Abstract: Vertical high power LEDs are the technological choice for the application of general lighting due to their advantages of high efficiency and capability of handling high power. However, the technologies of vertical LED fabrication reported so far involve the wafer-level metal substrate substitution which may cause large stress due to the mismatch between metal substrate and LED layer. Moreover, the metal substrate has to be diced to separate LED dies which may cause metal contamination and thus increase the leakage current. These factors will lower the yield of LED production and increase the cost as well. The present invention is to disclose a novel method for the fabrication of GaN vertical high power LEDs and/or a novel method for the fabrication of GaN vertical high power LEDs which is compatible to mass production conditions. The novelty of the invention is that the island metal plating is conducted with the help of pattern formation techniques.