Abstract: A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection

Abstract: A multipurpose ion implanter beam line configuration constructed for enabling implantation of common monatomic dopant ion species and cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept art ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions o

Abstract: A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection

Abstract: A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection

Abstract: A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection

Abstract: In a magnetic analysis apparatus, high voltage insulation (86, 94) isolates the magnet excitation coil (40), power leads (90) and cooling fluid lines (92) from the ferromagnetic assembly (26, 28, 30, 32, 34) of a sector magnet, and the coil supply is disposed in a grounded housing (E). A sleeve (94), containing electric power leads and cooling fluid lines, forms an insulator through the magnet assembly to the coil (40) and the coil is surrounded by electrical insulation providing electrical isolation from the magnet assembly of least 20 KV. The excitation coil comprises alternating coil segments (80) and cooling plates (82) within an impervious cocoon (86) of insulating material of at least 6 mm thickness. Yoke and core members (20, 30, 32, 34) of the magnet assembly are disposed outside of the vacuum housing (20) while pole members (28) extend through and are sealed to walls of the vacuum housing.

Abstract: The ion implanting apparatus according to this invention includes: an ion source for producing the ion beam 20 including desired ion species and being shaped in a sheet with a width longer than a narrow width of a substrate 82, a mass separating magnet 36 for selectively deriving the desired ion species by bending the ion beam in a direction perpendicular to a sheet face thereof, a separating slit 72 for selectively making the desired ion species pass through by cooperating with the mass separating magnet 36, and a substrate drive device 86 for reciprocatedly driving the substrate 82 in a direction substantially perpendicular to the sheet face 20s of the ion beam 20 within an irradiating area of the ion beam 20 which has passed through a separating slit 72.

Abstract: An apparatus and method is provided for manufacturing a semiconductor substrate such as web crystals. The apparatus includes a chamber and a growth hardware assembly housed within the chamber. A magnetic field system produces a vertical magnetic field within the chamber.

Abstract: An apparatus and method is provided for manufacturing a semiconductor substrate such as web crystals. The apparatus includes a chamber and a growth hardware assembly housed within the chamber. A magnetic field system produces a vertical magnetic field within the chamber.

Abstract: An apparatus and method is provided for manufacturing a semiconductor substrate such as web crystals. The apparatus includes a chamber and a growth hardware assembly housed within the chamber. A magnetic field system produces a vertical magnetic field within the chamber.

Abstract: An apparatus and method is provided for manufacturing a semiconductor substrate such as web crystals. The apparatus includes a chamber and a growth hardware assembly housed within the chamber. A magnetic field system produces a vertical magnetic field within the chamber.

Abstract: An apparatus and method is provided for manufacturing a semiconductor substrate such as web crystals. The apparatus includes a chamber and a growth hardware assembly housed within the chamber. A magnetic field system produces a vertical magnetic field within the chamber.

Abstract: An apparatus and method is provided for manufacturing a semiconductor substrate such as web crystals. The apparatus includes a chamber and a growth hardware assembly housed within the chamber. A magnetic field system produces a vertical magnetic field within the chamber.

Abstract: An ion implanter employs two three gap rf accelerator stages to boost the implant energy after mass selection. The electrodes of the accelerator stages have slit-shaped apertures that accommodate high beam current, when the accelerator is in drift mode. By particular choice of the parameters of the accelerator, each stage of the accelerator produces accelerated ions having a relatively small energy spread, even though the acceptance range of the accelerator stage extends over a substantial phase angle of the applied rf voltage. The resulting accelerator is flexible, permitting a wide variation of output energies with good beam dynamics. Ion bunches from the first three gap stage are caused to have the correct flight time to reach the second stage for acceleration by adjusting the speed of the ions while maintaining the rf phase of the fields in the two stages locked to fixed values.

Abstract: Ion implanter having at least two independent ion generating systems coupled to a single scanning end station. In a preferred embodiment one of the ion generating systems generates ions approximately in the 3-80 keV range and the other system generates ions approximately in the 80-3,000 keV range. The scanning end station may be employ magnetic, electrostatic, or mechanical scanning. This invention has particular relevance for the controlled doping of semiconducting materials and flat panel displays units in which doping may be needed for the production of micro-electronic devices, the sub-circuit crystal damage that is useful for gettering unwanted impurity atoms and for the development of etch pits in flat panel displays. The disclosed apparatus makes possible a variety of chained implants at different energies using the same mask.

Abstract: A magnetic system for producing a magnetic field having static and high frequency time-varying components comprising: two magnetic poles defining a gap therebetween, the poles being formed with electrically insulating material for confining any high frequency induced eddy currents to limited values in local paths in the poles; an ac coil associated with the magnetic poles for producing a time-varying magnetic field in the gap; a magnetic structure including a yoke and two cores which are respectively coupled to the two poles, the magnetic structure being formed of solid material, with a high magnetic saturation level; and dc coils associated with the cores of the magnetic structure for producing a static magnetic field in the gap. The magnetic system are used for magnetically scanning an ion beam and an ion implantation system, both of which are based on the above system, as well as a magnetic system useful for magnetic resonance imaging applications.

Abstract: An ion beam accelerator and an ion implantation system including a plurality of spaced apart electrodes, including at least one active electrode, and a pair of oppositely wound coils disposed within the shield, the coils being in parallel, having respective terminating ends electrically coupled together in pairs, the end regions of the two coils being positioned relative to each other for flow of flux between the coils so that, when the coils are energized, magnetic fields produced by the coils are reinforced within the coils and are reduced outside of the coils; wherein, when the coils are energized, the coils produce at the active electrode a time-varying oscillatory electric potential of a selected resonant frequency to establish between electrodes a time-varying oscillatory electric field in the vicinity of the beam path to accelerate ions. A general purpose resonant system based on the above-mentioned oppositely wound coil structure is also disclosed.

Abstract: Deflection apparatus is shown for high perveance ion beams, operating at 20 Hz fundamental and substantially higher order harmonics, having a magnetic structure formed of laminations with thickness in range between 0.2 and 1 millimeter. Additionally, a compensator is shown with similar laminated structures with resonant excitation circuit, operating at 20 Hz or higher, in phase locked relationship with the frequency of the previously deflected beam. Furthermore, features are shown which have broader applicability to producing strong magnetic field in magnetic gap. Among the numerous important features shown are special laminated magnetic structures, including different sets of crosswise laminations in which the field in one lamination of one set is distributed into multiplicity of laminations of the other set of coil-form structures, field detection means and feedback control system, cooling plate attached in thermal contact with number of lamination layers.

Abstract: A magnetic system for uniformly scanning an ion beam comprising a magnetic structure having poles with associated scanning coils and respective pole faces that define therebetween a gap through which the ion beam passes; and a magnetic circuit for producing in the gap a magnetic field of sufficient magnitude to prevent the occurrence of a recently observed plasma effect in which the transverse cross-section of the ion beam substantially fluctuates in size while the ion beam is being scanned across the selected surface.

Abstract: A magnetic deflection system for scanning an ion beam over a selected surface comprising: a magnetic structure having poles with respective scanning coils and respective pole faces that define therebetween a gap through which the ion beam passes; a primary current source coupled to the scanning coils adapted to apply to the scanning coils an excitation current to generate a substantially unipolar oscillatory magnetic field in the gap that alternates in polarity as a function of time to cause scanning of the ion beam, the substantially unipolar magnetic field having a magnitude sufficiently greater than zero to prevent the transverse cross-section of the ion beam from substantially fluctuating in size while the ion beam is being scanned across the selected surface.