Patents by Inventor Himani Sharma

Himani Sharma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230314371
    Abstract: Described herein is a bias-free high-throughput and high-yield continuous isoelectric fractionation (CIF) nanocarrier fractionation technique based on distinct isoelectric points. The nanocarrier fractionation platform is enabled by a robust and tunable linear pH profile provided by water-splitting at a bipolar membrane and stabilized by flow without ampholytes.
    Type: Application
    Filed: February 23, 2023
    Publication date: October 5, 2023
    Inventors: Satyajyoti Senapati, Hsueh-Chia Chang, Himani Sharma, David Go
  • Patent number: 11756985
    Abstract: An exemplary embodiment of the present invention provides a planar inductor including a substrate, a first magnetic layer, a conductive coil, and a second magnetic layer. The first magnetic layer can be disposed on at least a portion of the substrate. The conductive coil can be disposed on a first portion of the first magnetic layer. The second magnetic layer can be disposed on a second portion of the first magnetic layer and on at least a portion of the conductive coil.
    Type: Grant
    Filed: November 16, 2017
    Date of Patent: September 12, 2023
    Assignees: Georgia Tech Research Corporation, NITTO DENKO CORPORATION
    Inventors: Markondeya Raj Pulugurtha, Yoshihiro Furukawa, Himani Sharma, Keiji Takemura, Rao R. Tummala, Teng Sun
  • Publication number: 20210036095
    Abstract: An exemplary embodiment of the present invention provides a planar inductor including a substrate, a first magnetic layer, a conductive coil, and a second magnetic layer. The first magnetic layer can be disposed on at least a portion of the substrate. The conductive coil can be disposed on a first portion of the first magnetic layer. The second magnetic layer can be disposed on a second portion of the first magnetic layer and on at least a portion of the conductive coil.
    Type: Application
    Filed: November 16, 2017
    Publication date: February 4, 2021
    Applicants: Georgia Tech Research Corporation, NITTO DENKO CORPORATION
    Inventors: Markondeya Raj PULUGURTHA, Yoshihiro FURUKAWA, Himani SHARMA, Keiji TAKEMURA, Rao R. TUMMALA, Teng SUN
  • Publication number: 20180134771
    Abstract: The present invention discloses a method of treating, preventing or ameliorating tumor growth by immune response modulation via targeting ABCB5 and an immune checkpoint molecule related pathways using various therapeutic agents such as antibody or small molecule. The present invention also provides use of an ABCB5 inhibitor and an immune checkpoint inhibitor(s) for enhancing, increasing, promoting, expressing, modulating desirable immune response for prevention and treatment of tumors.
    Type: Application
    Filed: May 9, 2016
    Publication date: May 17, 2018
    Inventors: Krishnan NANDABALAN, Himani SHARMA, Aparna Katoch SAPRA, Sanatan UPMANYU
  • Publication number: 20180094058
    Abstract: The present invention discloses a method of treating, preventing or ameliorating tumor growth by immune response modulation via targeting LGALS3BP-CD33 related Siglec pathway using antibody or antibody-drug conjugate therapy. The present invention also provide use of anti-LGALS3BP antibody in combination with an immune checkpoint inhibitor for enhancing, increasing, promoting, expressing, modulating desirable immune response for prevention and treatment of tumors and metastases thereof. Also provides combination therapy with an immune checkpoint inhibitor.
    Type: Application
    Filed: April 18, 2016
    Publication date: April 5, 2018
    Inventors: Himani SHARMA, Krishnan Nandabalan
  • Publication number: 20100284123
    Abstract: The present invention describes systems and methods for fabricating high-density capacitors. An exemplary embodiment of the present invention provides a method for fabricating a high-density capacitor system including the steps of providing a substrate and depositing a nanoelectrode particulate paste layer onto the substrate. The method for fabricating a high-density capacitor system further includes sintering the nanoelectrode particulate paste layer to form a bottom electrode. Additionally, the method for fabricating a high-density capacitor system includes depositing a dielectric material onto the bottom electrode with an atomic layer deposition process. Furthermore, the method for fabricating a high-density capacitor system includes depositing a conductive material on the dielectric material to form a top electrode.
    Type: Application
    Filed: May 5, 2009
    Publication date: November 11, 2010
    Inventors: MarkondeyaRaj Pulugurtha, Andreas Fenner, Anna Malin, Kanika Sethi, Himani Sharma, Dasharatham Janagama Goud, Rao Tummala