Patents by Inventor Himani Suhag Kamineni

Himani Suhag Kamineni has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated circuit product having a through-substrate-via (TSV) and a metallization layer that are formed after formation of a semiconductor device
    Patent number: 10446443
    Abstract: An integrated circuit product includes a substrate, an interlayer dielectric (ILD) material positioned above the substrate and a through-substrate-via (TSV) extending continuously through the substrate and the ILD material. The TSV includes a substrate portion of the TSV that is positioned in and extends continuously through the substrate and an ILD portion of the TSV that is positioned in and extends continuously through the ILD. An insulating liner layer is selectively positioned between and separates the substrate portion of the TSV and the substrate, wherein the selectively positioned insulating liner layer does not extend from the substrate to the ILD material.
    Type: Grant
    Filed: January 23, 2018
    Date of Patent: October 15, 2019
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Himani Suhag Kamineni, Vimal Kumar Kamineni, Daniel Smith, Maxwell Lippitt
  • INTEGRATED CIURCUIT PRODUCT HAVING A THROUGH-SUBSTRATE-VIA (TSV) AND A METALLIZATION LAYER THAT ARE FORMED AFTER FORMATION OF A SEMICONDUCTOR DEVICE
    Publication number: 20180158733
    Abstract: An integrated circuit product includes a substrate, an interlayer dielectric (ILD) material positioned above the substrate and a through-substrate-via (TSV) extending continuously through the substrate and the ILD material. The TSV includes a substrate portion of the TSV that is positioned in and extends continuously through the substrate and an ILD portion of the TSV that is positioned in and extends continuously through the ILD. An insulating liner layer is selectively positioned between and separates the substrate portion of the TSV and the substrate, wherein the selectively positioned insulating liner layer does not extend from the substrate to the ILD material.
    Type: Application
    Filed: January 23, 2018
    Publication date: June 7, 2018
    Inventors: Himani Suhag Kamineni, Vimal Kumar Kamineni, Daniel Smith, Maxwell Lippitt
  • Methods of forming a through-substrate-via (TSV) and a metallization layer after formation of a semiconductor device
    Patent number: 9917009
    Abstract: One illustrative method disclosed includes, among other things, forming a semiconductor device above a semiconducting substrate, forming a device level contact to the semiconductor device and, after forming the device level contact, performing at least one common process operation so as to form a through-substrate-via (TSV) in a trench in the substrate, a TSV contact structure that is conductively coupled to the TSV and a conductive metallization element that is conductively coupled to the device level contact.
    Type: Grant
    Filed: August 4, 2016
    Date of Patent: March 13, 2018
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Himani Suhag Kamineni, Vimal Kumar Kamineni, Daniel Smith, Maxwell Lippitt
  • METHODS OF FORMING A THROUGH-SUBSTRATE-VIA (TSV) AND A METALLIZATION LAYER AFTER FORMATION OF A SEMICONDUCTOR DEVICE
    Publication number: 20180040511
    Abstract: One illustrative method disclosed includes, among other things, forming a semiconductor device above a semiconducting substrate, forming a device level contact to the semiconductor device and, after forming the device level contact, performing at least one common process operation so as to form a through-substrate-via (TSV) in a trench in the substrate, a TSV contact structure that is conductively coupled to the TSV and a conductive metallization element that is conductively coupled to the device level contact.
    Type: Application
    Filed: August 4, 2016
    Publication date: February 8, 2018
    Inventors: Himani Suhag Kamineni, Vimal Kumar Kamineni, Daniel Smith, Maxwell Lippitt