Patents by Inventor Himanshu Pokharrna

Himanshu Pokharrna has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process
    Patent number: 6255222
    Abstract: A method of minimizing particle or residue accumulation within an exhaust line of a substrate processing chamber having a downstream plasma apparatus connected to the exhaust line. One embodiment of the method turns ON the downstream plasma apparatus during a substrate deposition step and a chamber clean operation, and switches the downstream plasma apparatus OFF at other times including the time during which purge gases are flowed into the chamber and various chamber set up or conditioning steps are performed.
    Type: Grant
    Filed: August 24, 1999
    Date of Patent: July 3, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Li-Qun Xia, Himanshu Pokharrna, Tian-Hoe Lim