Patents by Inventor Himansu Pokharna

Himansu Pokharna has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Lid cooling mechanism and method for optimized deposition of low-K dielectric using TR methylsilane-ozone based processes
    Patent number: 6899763
    Abstract: An apparatus and method for depositing thin films. The apparatus generally comprises a process chamber having one or more walls and a lid and two heat exchangers. A first heat exchanger is coupled to the walls and a second heat exchanger is coupled to the lid. The two heat exchangers are configured to provide separate temperature control of the walls and lid. Separate control of the lid and wall temperatures inhibits reaction of the organosilane within the lid while optimizing a reaction within the chamber. The apparatus implements a method, in which a process gas comprising ozone and an organosilane are admitted through the into a processing while a substrate is heated to form a carbon-doped silicon oxide layer over the substrate. During deposition, the lid is kept cooler than the walls.
    Type: Grant
    Filed: November 8, 2002
    Date of Patent: May 31, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Himansu Pokharna, Li-Qun Xia, Tian H. Lim
  • Lid cooling mechanism and method for optimized deposition of low-K dielectric using TRI methylsilane-ozone based processes
    Publication number: 20030066482
    Abstract: An apparatus and method for depositing thin films. The apparatus generally comprises a process chamber having one or more walls and a lid and two heat exchangers. A first heat exchanger is coupled to the walls and a second heat exchanger is coupled to the lid. The two heat exchangers are configured to provide separate temperature control of the walls and lid. Separate control of the lid and wall temperatures inhibits reaction of the organosilane within the lid while optimizing a reaction within the chamber. The apparatus implements a method, in which a process gas comprising ozone and an organosilane are admitted through the into a processing while a substrate is heated to form a carbon-doped silicon oxide layer over the substrate. During deposition, the lid is kept cooler than the walls.
    Type: Application
    Filed: November 8, 2002
    Publication date: April 10, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Himansu Pokharna, Li-Qun Xia, Tian H. Lim
  • Lid cooling mechanism and method for optimized deposition of low-k dielectric using tri methylsilane-ozone based processes
    Patent number: 6528116
    Abstract: An apparatus and method for depositing thin films. The apparatus generally comprises a process chamber having one or more walls and a lid and two heat exchangers. A first heat exchanger is coupled to the walls and a second heat exchanger is coupled to the lid. The two heat exchangers are configured to provide separate temperature control of the walls and lid. Separate control of the lid and wall temperatures inhibits reaction of the organosilane within the lid while optimizing a reaction within the chamber. The apparatus implements a method, in which a process gas comprising ozone and an organosilane are admitted through the into a processing while a substrate is heated to form a carbon-doped silicon oxide layer over the substrate. During deposition, the lid is kept cooler than the walls.
    Type: Grant
    Filed: August 7, 2000
    Date of Patent: March 4, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Himansu Pokharna, Li-Qun Xia, Tian H. Lim