Patents by Inventor Himchan PARK

Himchan PARK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250221056
    Abstract: A device includes: a plurality of first transistors included in a first current path, in a normal mode, between a first power node to which a positive supply voltage is configured to be applied and a second power node to which a negative supply voltage is configured to be applied; and a first protection transistor connected to a first node which two of the plurality of first transistors are connected to, wherein the first protection transistor is configured to be turned off in the normal mode and to be turned on to provide a protection voltage to the first node in a power down mode.
    Type: Application
    Filed: December 19, 2024
    Publication date: July 3, 2025
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Himchan PARK, Jooseong Kim, Junhyeok Yang, Sungmin Yoo, Haejung Choi
  • Publication number: 20250085329
    Abstract: A semiconductor device may include a voltage generator configured to generate a first base-emitter voltage of a first bipolar junction transistor, and a failure detector configured to generate a failure signal by comparing the first base-emitter voltage with an upper limit reference voltage and a lower limit reference voltage. The failure detector may include a second bipolar junction transistor a current source configured to generate a bias current, a first resistor coupled between the current source and a emitter of the second bipolar junction transistor to generate the upper limit reference voltage, a second resistor and a third resistor configured to divide a second base-emitter voltage of the second bipolar junction transistor to generate the lower limit reference voltage, and a first and second comparator configured to compare the first base-emitter voltage with the upper limit reference voltage and the lower limit reference voltage, respectively, to generate respective failure signals.
    Type: Application
    Filed: November 25, 2024
    Publication date: March 13, 2025
    Inventors: Donghun Heo, Himchan Park, Cheolhwan Lim
  • Patent number: 12181512
    Abstract: A semiconductor device may include a voltage generator configured to generate a first base-emitter voltage of a first bipolar junction transistor, and a failure detector configured to generate a failure signal by comparing the first base-emitter voltage with an upper limit reference voltage and a lower limit reference voltage. The failure detector may include a second bipolar junction transistor a current source configured to generate a bias current, a first resistor coupled between the current source and a emitter of the second bipolar junction transistor to generate the upper limit reference voltage, a second resistor and a third resistor configured to divide a second base-emitter voltage of the second bipolar junction transistor to generate the lower limit reference voltage, and a first and second comparator configured to compare the first base-emitter voltage with the upper limit reference voltage and the lower limit reference voltage, respectively, to generate respective failure signals.
    Type: Grant
    Filed: November 10, 2022
    Date of Patent: December 31, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Donghun Heo, Himchan Park, Cheolhwan Lim
  • Publication number: 20230296661
    Abstract: A semiconductor device may include a voltage generator configured to generate a first base-emitter voltage of a first bipolar junction transistor, and a failure detector configured to generate a failure signal by comparing the first base-emitter voltage with an upper limit reference voltage and a lower limit reference voltage. The failure detector may include a second bipolar junction transistor a current source configured to generate a bias current, a first resistor coupled between the current source and a emitter of the second bipolar junction transistor to generate the upper limit reference voltage, a second resistor and a third resistor configured to divide a second base-emitter voltage of the second bipolar junction transistor to generate the lower limit reference voltage, and a first and second comparator configured to compare the first base-emitter voltage with the upper limit reference voltage and the lower limit reference voltage, respectively, to generate respective failure signals.
    Type: Application
    Filed: November 10, 2022
    Publication date: September 21, 2023
    Inventors: Donghun Heo, Himchan Park, Cheolhwan Lim
  • Patent number: 11107187
    Abstract: A graph upscaling method and apparatus is disclosed. The graph upscaling apparatus may store, in a main memory, original graph data including topological data including a vertex and an edge, determine a parent edge using a hash function and the original graph data, and generate a new edge based on the determined parent edge. The graph upscaling apparatus may store, in a main memory, original graph data including topological data including a vertex and an edge, allocate identities (IDs) of edges to be generated to cores included in a central processing unit (CPU) based on the number of the cores, and generate new edges based on the IDs of the edges using a hash function and the original graph data.
    Type: Grant
    Filed: August 15, 2019
    Date of Patent: August 31, 2021
    Assignee: DAEGU GYEONGBUK INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Min Soo Kim, Himchan Park
  • Patent number: 10895798
    Abstract: A beam deflector, a holographic display device including the beam deflector, and a method of driving the beam deflector are provided. The beam deflector includes first electrodes spaced apart from each other on a first substrate, second electrodes spaced apart from each other on a second substrate, a liquid crystal layer between the first substrate and the second substrate, and a controller configured to cause active prisms to be formed in the liquid crystal layer and to form a floating zone by turning off a voltage of at least one of the first electrode and the second electrode disposed between adjacent ones of the active prisms.
    Type: Grant
    Filed: September 4, 2018
    Date of Patent: January 19, 2021
    Assignees: SAMSUNG ELECTRONICS CO., LTD., SOGANG UNIVERSITY RESEARCH FOUNDATION
    Inventors: Young Kim, Kanghee Won, Himchan Park, Jinwook Burm, Hoon Song, Hongseok Lee
  • Patent number: 10593080
    Abstract: Disclosed is a graph generating method and apparatus, the graph generating apparatus that may recognize one source vertex among a plurality of vertices, obtain the target number of at least one edge to generate from the source vertex, among the total target number of edges to generate between the vertices, obtain a recursive vector to be used repeatedly to generate the at least one edge, in a scope in which an existence of an edge for the source vertex needs to be verified, and generate the at least one edge between the source vertex and at least one destination vertex based on the target number and the recursive vector.
    Type: Grant
    Filed: April 18, 2018
    Date of Patent: March 17, 2020
    Assignee: Daegu Gyeongbuk Institute of Science and Technology
    Inventors: Min Soo Kim, Himchan Park
  • Publication number: 20200065939
    Abstract: A graph upscaling method and apparatus is disclosed. The graph upscaling apparatus may store, in a main memory, original graph data including topological data including a vertex and an edge, determine a parent edge using a hash function and the original graph data, and generate a new edge based on the determined parent edge. The graph upscaling apparatus may store, in a main memory, original graph data including topological data including a vertex and an edge, allocate identities (IDs) of edges to be generated to cores included in a central processing unit (CPU) based on the number of the cores, and generate new edges based on the IDs of the edges using a hash function and the original graph data.
    Type: Application
    Filed: August 15, 2019
    Publication date: February 27, 2020
    Inventors: Min Soo Kim, Himchan PARK
  • Publication number: 20190331980
    Abstract: A beam deflector, a holographic display device including the beam deflector, and a method of driving the beam deflector are provided. The beam deflector includes first electrodes spaced apart from each other on a first substrate, second electrodes spaced apart from each other on a second substrate, a liquid crystal layer between the first substrate and the second substrate, and a controller configured to cause active prisms to be formed in the liquid crystal layer and to form a floating zone by turning off a voltage of at least one of the first electrode and the second electrode disposed between adjacent ones of the active prisms.
    Type: Application
    Filed: September 4, 2018
    Publication date: October 31, 2019
    Applicants: SAMSUNG ELECTRONICS CO., LTD., SOGANG UNIVERSITY RESEARCH FOUNDATION
    Inventors: Young KIM, Kanghee WON, Himchan PARK, Jinwook BURM, Hoon SONG, Hongseok LEE
  • Publication number: 20180315229
    Abstract: Disclosed is a graph generating method and apparatus, the graph generating apparatus that may recognize one source vertex among a plurality of vertices, obtain the target number of at least one edge to generate from the source vertex, among the total target number of edges to generate between the vertices, obtain a recursive vector to be used repeatedly to generate the at least one edge, in a scope in which an existence of an edge for the source vertex needs to be verified, and generate the at least one edge between the source vertex and at least one destination vertex based on the target number and the recursive vector
    Type: Application
    Filed: April 18, 2018
    Publication date: November 1, 2018
    Applicant: Daegu Gyeongbuk Institute of Science and Technology
    Inventors: Min Soo KIM, Himchan PARK