Patents by Inventor Hin-Leung Chau
Hin-Leung Chau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 5858809Abstract: A method and apparatus for providing a conductive plane beneath a suspended microstructure. A conductive region is diffused into a substrate. A dielectric layer is added, covering the substrate, and then removed from a portion of the conductive region. A spacer layer is deposited over the dielectric and exposed conductive region. A polysilicon layer is deposited over the spacer layer, and formed into the shape of the suspended microstructure. After removal of the spacer layer, the suspended microstructure is left free to move above an exposed conductive plane. The conductive plane is driven to the same potential as the microstructure.Type: GrantFiled: March 18, 1997Date of Patent: January 12, 1999Assignee: Analog DevicesInventors: Kevin Hin-Leung Chau, Roger T. Howe, Richard S. Payne, Yang Zhao, Theresa A. Core, Steven J. Sherman
-
Patent number: 5640039Abstract: A method and apparatus for providing a conductive plane beneath a suspended microstructure. A conductive region is diffused into a substrate. A dielectric layer is added, covering the substrate, and then removed from a portion of the conductive region. A spacer layer is deposited over the dielectric and exposed conductive region. A polysilicon layer is deposited over the spacer layer, and formed into the shape of the suspended microstructure. After removal of the spacer layer, the suspended microstructure is left free to move above an exposed conductive plane. The conductive plane is driven to the same potential as the microstructure.Type: GrantFiled: December 1, 1994Date of Patent: June 17, 1997Assignee: Analog Devices, Inc.Inventors: Kevin Hin-Leung Chau, Roger T. Howe, Richard S. Payne, Yang Zhao, Theresa A. Core, Steven J. Sherman
-
Patent number: 5207103Abstract: A capacitive pressure sensor suitable for making highly sensitive, low pressure measurements is disclosed. The sensor may be mounted into a 0.5 mm OD catheter suitable for multipoint pressure measurements from within the coronary artery of the heart. The sensor employs a transducer which consists of a rectangular bulk silicon microdiaphragm several hundred microns on a side by two microns thick, surrounded by a supporting bulk silicon rim about 12 microns thick. Both the diaphragm and the rim are defined by a double diffusion etch-stop technique. The transducer fabrication process features a batch wafer-to-glass electrostatic seal followed by a silicon etch, which eliminates handling of individual small diaphragm structures until die separation and final packaging. An addressable read-out interface circuit may be used with the sensor to provide a high-level output signal, and allows the sensor to be compatible for use on a multisite catheter having only two electrical leads.Type: GrantFiled: May 18, 1992Date of Patent: May 4, 1993Inventors: Kensall D. Wise, Hin-Leung Chau
-
Patent number: 5113868Abstract: A capactive pressure sensor suitable for making highly sensitive, low pressure measurements is disclosed. The sensor may be mounted into a 0.5 mm OD catheter suitable for multipoint pressure measurements from within the coronary artery of the heart. The sensor employs a transducer which consists of a rectangular bulk silicon micro-diaphragm several hundred microns on a side by two microns thick, surrounded by a supporting bulk silicon rim about 12 microns thick. Both the diaphragm and the rim are defined by a double diffusion etch-stop technique. The transducer fabrication process features a batch wafer-to-glass electrostatic seal followed by a silicon etch, which eliminates handling of individual small diaphragm structures until die separation and final packaging. An addressable read-out interface circuit may be used with the sensor to provide a high-level output signal, and allows the sensor to be compatible for use on a multisite catheter having only two electrical leads.Type: GrantFiled: December 21, 1990Date of Patent: May 19, 1992Assignee: The Regents of The University of MichiganInventors: Kensall D. Wise, Hin-Leung Chau
-
Patent number: 5013396Abstract: A capacitive pressure sensor suitable for making highly sensitive, low pressure measurements is disclosed. The sensor may be mounted into a 0.5 mm OD catheter suitable for multipoint pressure measurements from within the coronary artery of the heart. The sensor employs a tranducer which consists of a rectangular bulk silicon micro-diaphragm several hundred microns on a side by two microns thick, surrounded by a supporting bulk silicon rim about 12 microns thick. Both the diaphragm and the rim are defined by a double diffusion etch-stop technique. The transducer fabrication process features a batch wafer-to-glass electrostatic seal followed by a silicon etch, which eliminates handling of individual small diaphragm structures until die separation and final packaging. An addressable read-out interface circuit may be used with the sensor to provide a high-level output signal, and allows the sensor to be compatible for use on a multisite catheter having only two electrical leads.Type: GrantFiled: November 3, 1989Date of Patent: May 7, 1991Assignee: The Regents of the University of MichiganInventors: Kensall D. Wise, Hin-Leung Chau
-
Patent number: 4881410Abstract: A capacitive pressure sensor suitable for making highly sensitive, low pressure measurements is disclosed. The sensor may be mounted into a 0.5 mm OD catheter suitable for multipoint pressure measurements from within the coronary artery of the heart. The sensor employs a transducer which consists of a rectangular bulk silicon micro-diaphragm several hundred microns on a side by two microns thick, surrounded by a supporting bulk silicon rim about 12 microns thick. Both the diaphragm and the rim are defined by a double diffusion etch-stop technique. The transducer fabrication process features a batch wafer-to-glass electrostatic seal followed by a silicon etch, which eliminates handling of individual small diaphragm structures until die separation and final packaging. An addressable read-out interface circuit may be used with the sensor to provide a high-level output signal, and allows the sensor to be compatible for use on a multisite catheter having only two electrical leads.Type: GrantFiled: May 4, 1988Date of Patent: November 21, 1989Assignee: The Regents of the University of MichiganInventors: Kensall D. Wise, Hin-Leung Chau
-
Patent number: 4815472Abstract: A capacitive pressure sensor suitable for making highly sensitive, low pressure measurements is disclosed. The sensor may be mounted into a 0.5 mm OD catheter suitable for multipoint pressure measurements from within the coronary artery of the heart. The sensor employs a transducer which consists of a rectangular bulk silicon micro-diaphragm several hundred microns on a side by two microns thick, surrounded by a supporting bulk silicon rim about 12 microns thick. Both the diaphragm and the rim are defined by a double diffusion etch-stop technique. The transducer fabrication process features a batch wafer-to-glass electrostatic seal followed by a silicon etch, which eliminates handling of individual small diaphragm structures until die separation and final packaging. An addressable read-out interface circuit may be used with the sensor to provide a high-level output signal, and allows the sensor to be compatible for use on a multisite catheter having only two electrical leads.Type: GrantFiled: June 1, 1987Date of Patent: March 28, 1989Assignee: The Regents of the University of MichiganInventors: Kensall D. Wise, Hin-Leung Chau