Abstract: A method for bonding a first body (2) to a second, panel-shaped body (3) at bonding surfaces (2a, 3a) lying opposite each other, the second body (3) projecting in at least one direction (X) beyond an edge (2?) of the first body (2). The method includes: producing a plurality of spacers (4a to 4e, 4a? to 4e?) on at least one of the bonding surfaces (2a), applying adhesive (5) into intermediate spaces (6a to 6d) between the spacers beyond an outer spacer (4e, 4e?) as far as an adhesive periphery (5a), which is formed at an edge (2?) of the first body (2), and bonding the bodies (2, 3) by bringing the bonding surfaces (2a, 3a) into contact at the spacers (4a? to 4e?). A prescribed distance (d) between the adhesive periphery (5a) and the outermost spacer (4e) is set to provide a desired state of deformation of the panel-shaped body (3) after a shrinkage of the applied adhesive (5) (e.g. minimized bending of the body.

Abstract: An EUV lithography device including an illumination device for illuminating a mask at an illumination position in the EUV lithography device and a projection device for imaging a structure provided on the mask onto a light-sensitive substrate. The EUV lithography device has a processing device (15) for processing an optical element (6a), in particular the mask, preferably in a locally resolved manner, at a processing position in the EUV lithography device. For activating at least one gas component of the gas stream (27), the processing device (15) comprises a particle generator (30) for generating a particle beam, in particular an electron beam (30a), and/or a high-frequency generator.

Abstract: A cleaning module for an EUV lithography device with a supply (206) for molecular hydrogen, a heating filament (210) and a line (212) for atomic and/or molecular hydrogen. The line (212) has at least one bend with a bending angle of less than 120 degrees, and has a material on its inner surface which has a low recombination rate for atomic hydrogen. The supply (206) is of flared shape at its end, which faces the heating filament (210). A gentler cleaning of optical elements is achieved with such a cleaning module, or also by exciting a cleaning gas with a cold cathode or a plasma, or by filtering out charged particles via of electrical and/or magnetic fields.

Abstract: In order to clean optical components (35) inside an EUV lithography device in a gentle manner, a cleaning module for an EUV lithography device includes a supply line for molecular hydrogen and a heating filament for producing atomic hydrogen and hydrogen ions for cleaning purposes. The cleaning module also has an element, (33) arranged to apply an electric and/or magnetic field, downstream of the heating filament (29) in the direction of flow of the hydrogen (31, 32). The element can be designed as a deflection unit, as a filter unit and/or as an acceleration unit for the ion beam (32).

Abstract: Inside a vacuum chamber 200 a cleaning unit 204 provides atomic hydrogen or atomic deuterium for cleaning a surface 202 at a pressure of less than 10?4 Torr or of more than 10?3 Torr. The surface 202 is heated by the heating unit 203 to a temperature of at least 50° C. This allows achieving cleaning rates of more than 60 ?/h. Preferably, the surface 202 is the surface of a multilayer mirror 201 as used in an EUV lithography apparatus.

Abstract: The disclosure relates to methods for producing mirrors, in particular facet mirrors, and projection exposure apparatuses equipped with the mirrors.