Abstract: The invention concerns an ion trap, including a first ring-shaped end cap electrode and a second ring-shaped end cap electrode, between which is formed a ring-shaped ion storage cell, as well as a plurality of radially inner disk-shaped ring electrodes and a plurality of radially outer disk-shaped ring electrodes, which delimit the ring-shaped ion storage cell. The invention also relates to a mass spectrometer that has such an ion trap as well as a control device that is designed to actuate the disk-shaped ring electrodes and the end cap electrodes for the storage, selection, excitation and/or detection of ions in the ring-shaped ion storage cell.

Abstract: The invention relates to a mass spectrometer for analysing a gas by mass spectrometry, comprising: a controllable inlet system for pulsed feeding of the gas to be analysed from a process region outside the mass spectrometer into an ionisation region, an ionisation device for ionising the gas to be analysed in the ionisation region, an ion transfer device for transferring the ionised gas from a ionisation region via an ion transfer region into an analysis region, and an analyser for detecting the ionised gas in the analysis region. The invention further relates to an associated method for mass spectrometrically analysing a gas.

Abstract: The invention concerns an ion trap, including a first ring-shaped end cap electrode and a second ring-shaped end cap electrode, between which is formed a ring-shaped ion storage cell, as well as a plurality of radially inner disk-shaped ring electrodes and a plurality of radially outer disk-shaped ring electrodes, which delimit the ring-shaped ion storage cell. The invention also relates to a mass spectrometer that has such an ion trap as well as a control device that is designed to actuate the disk-shaped ring electrodes and the end cap electrodes for the storage, selection, excitation and/or detection of ions in the ring-shaped ion storage cell.

Abstract: The invention relates to a mass spectrometer for analysing a gas by mass spectrometry, comprising: a controllable inlet system for pulsed feeding of the gas to be analysed from a process region outside the mass spectrometer into an ionisation region, an ionisation device for ionising the gas to be analysed in the ionisation region, an ion transfer device for transferring the ionised gas from a ionisation region via an ion transfer region into an analysis region, and an analyser for detecting the ionised gas in the analysis region. The invention further relates to an associated method for mass spectrometrically analysing a gas.

Abstract: A holding device is presented in which a layer which is to be oxidized is processed, in a single-substrate process. The process temperature during the processing is recorded directly at the substrate or at a holding device for the substrate. The process includes introducing a substrate, which bears a layer to be oxidized uncovered in an edge region in a layer stack, into a heating device, passing an oxidation gas onto the substrate, heating the substrate to a process temperature, which is recorded during the processing via a temperature of the holding device which holds the substrate, and controlling the substrate temperature to a desired temperature or temperature curve during the processing.

Abstract: A holding device is presented in which a layer which is to be oxidized is processed, in a single-substrate process. The process temperature during the processing is recorded directly at the substrate or at a holding device for the substrate. The process includes introducing a substrate, which bears a layer to be oxidized uncovered in an edge region in a layer stack, into a heating device, passing an oxidation gas onto the substrate, heating the substrate to a process temperature, which is recorded during the processing via a temperature of the holding device which holds the substrate, and controlling the substrate temperature to a desired temperature or temperature curve during the processing.

Abstract: A method is presented in which a layer which is to be oxidized is processed, in a single-substrate process. The process temperature during the processing is recorded directly at the substrate or at a holding device for the substrate. The method includes introducing a substrate, which bears a layer to be oxidized uncovered in an edge region in a layer stack, into a heating device, passing an oxidation gas onto the substrate, heating the substrate to a process temperature, which is recorded during the processing via a temperature of a holding device which holds the substrate, and controlling the substrate temperature to a desired temperature or temperature curve during the processing.

Abstract: A method of thermally treating a substrate that has multiple layers is provided. A substrate layer that is covered on opposite sides is oxidized from side edges thereof toward a center thereof such that, via the following steps, a defined central portion is not oxidized. The substrate is heated in a process chamber to a prescribed treatment temperature. A hydrogen-rich water vapor is introduced into the process chamber for a specified period of time, wherein such introduction is effected prior to, during and/or after the step of heating the substrate to the prescribed temperature. After conclusion of the specified period of time, introduced into the process chamber is one of the group consisting of: dry oxygen, namely pure oxygen in the form of at least one of atomic O, molecular O2 and O3; a mixture of oxygen and an inert gas that does not chemically react with the layers of the substrate; an oxygen-containing compound that contains no water; and an oxygen-rich water vapor.

Abstract: A method is presented in which a layer which is to be oxidized is processed, in a single-substrate process. The process temperature during the processing is recorded directly at the substrate or at a holding device for the substrate. The method includes introducing a substrate, which bears a layer to be oxidized uncovered in an edge region in a layer stack, into a heating device, passing an oxidation gas onto the substrate, heating the substrate to a process temperature, which is recorded during the processing via a temperature of a holding device which holds the substrate, and controlling the substrate temperature to a desired temperature or temperature curve during the processing.

Abstract: The aim of the invention is to stop the progression of a lateral oxidation of a layer of a multi-layer substrate at a defined point. To achieve this aim, the invention provides a method for thermally treating a substrate that comprises several layers, especially a semiconductor wafer, according to which a substrate layer that is covered from above and from below is oxidized from the lateral edges thereof to the center in such a manner that a defined center portion is not oxidized. The inventive method comprises the following steps: heating the substrate in a process chamber to a defined treatment temperature; introducing a hydrogen-rich water vapor into the process chamber for a defined period of time; and introducing dry oxygen or an oxygen-rich water vapor into the process chamber once the defined period of time has expired. The hydrogen-rich water vapor can be introduced into the process chamber either before, during and/or after the substrate is heated.

Abstract: A device for receiving plate-shaped objects, preferably semiconductor wafers, for the thermal treatment thereof, enabling the processing of wafers made of connecting semiconductors in a particularly simple manner. The inventive device offers high productivity and low risk of damage as a carrier has at least two recesses for respectively receiving an object. The recesses on the carrier can preferably be provided with covers. Preferably, support pins are provided for loading and unloading purposes. The carrier and the support pins can move in a vertical direction in relation to each other. A handling device for objects is also disclosed.