Abstract: The present disclosure relates to a metal comb structure including a first comb which includes a first set of metal fingers each of the metal fingers being connected at one end thereof by a connecting member from which the metal fingers extend. The metal comb structure also includes a second comb which includes a first set of metal fingers inter-digitated with the metal fingers of the first comb, a first set of vias associated with the metal fingers of the second comb and a connecting member connected to the vias thereby connecting the metal fingers of the second comb. The vias extend from the metal fingers of the second comb such that the connecting member of the second comb is located outside a plane defined by the metal fingers of the first and second combs.

Abstract: A One Time Programming (OTP) cell structure, a method of fabricating an OTP structure, and a method of programming a OTP cell structure. The OTP structure comprises a semiconductor substrate; an n Metal-Oxide-Semiconductor (nMOS) programming structure formed on the substrate; wherein respective electrical contacts to a source of the nMOS programming structure and to a p-bulk of the substrate are separated for individual biasing of the source and the p-bulk of the substrate.

Abstract: The present disclosure relates to a metal comb structure including a first comb which includes a first set of metal fingers each of the metal fingers being connected at one end thereof by a connecting member from which the metal fingers extend. The metal comb structure also includes a second comb which includes a first set of metal fingers inter-digitated with the metal fingers of the first comb, a first set of vias associated with the metal fingers of the second comb and a connecting member connected to the vias thereby connecting the metal fingers of the second comb. The vias extend from the metal fingers of the second comb such that the connecting member of the second comb is located outside a plane defined by the metal fingers of the first and second combs.

Abstract: A method of junction delineation of non-epitaxial wafers comprises the steps of preparing a sample of the wafer, staining the sample using a mixture of between one and three parts hydrofluoric acid to fifty parts nitric acid to twenty parts water, and scanning the sample with a scanning electron microscope.