Abstract: Disclosed is an Al—Cu alloy of the AA2000-series alloys with high toughness and an improved strength, including the following composition (in weight percent) Cu 4.5-5.5, Mg 0.5-1.6, Mn?0.80, Zr?0.18, Cr?0.18, Si?0.15, Fe?0.15, the balance essentially aluminum and incidental elements and impurities, and wherein the amount (in weight %) of magnesium is either: (a) in a range of 1.0 to 1.6%, or alternatively (b) in a range of 0.50 to 1.2% when the amount of dispersoid forming elements such as Cr, Zr or Mn is controlled and (in weight %) in a range of 0.10 to 0.70%.

Abstract: The invention relates to an aluminium alloy wrought product with high strength and fracture toughness and high fatigue resistance and low fatigue crack growth rate, and having a composition for the alloy comprising, in weight %, about 0.3 to 1.0% magnesium (Mg), about 4.4 to 5.5% copper (Cu), about 0 to 0.20% iron (Fe), about 0 to 0.20% silicon (Si), about 0 to 0.40% zinc (Zn), and Mn in a range 0.15 to 0.8 as a dispersoids forming element in combination with one or more of dispersoids forming elements selected from the group consisting of: (Zr, Sc, Cr, Hf, Ag, Ti, V), in ranges of: about 0 to 0.5% zirconium (Zr), about 0 to 0.7% scandium (Sc), about 0 to 0.4% chromium (Cr), about 0 to 0.3% hafnium (Hf), about 0 to 0.4% titanium (Ti), about 0 to 1.0% silver (Ag), the balance being aluminium (Al) and other incidental elements, and whereby there is a limitation of the Cu—Mg content such that ?1.1[Mg]+5.38?[Cu]?5.5. The invention further relates to a method of manufacturing such a product.

Abstract: A physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A physical vapor deposition target includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.

Abstract: A physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A physical vapor deposition target includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.

Abstract: A physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A physical vapor deposition target includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.

Abstract: A physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A physical vapor deposition target includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.

Abstract: A physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A physical vapor deposition target includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.