Patents by Inventor Hippo Wu

Hippo Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7094659
    Abstract: A method of forming a trench capacitor is disclosed. After completion of the bottom electrode of the capacitor, a collar dielectric layer is directly formed on the sidewall of the deep trench using self-starved atomic layer chemical vapor deposition (self-starved ALCVD). Then, a high dielectric constant (high k) dielectric layer is formed overlying the collar dielectric and the bottom portion of the deep trench using atomic layer chemical vapor deposition (ALCVD). Thereafter, a conductive layer is filled into the deep trench and recessed to a predetermined depth. A portion of the dielectric layer and the high dielectric constant (high k) layer at the top of the deep trench are removed to complete the fabrication of the deep trench capacitor.
    Type: Grant
    Filed: October 13, 2004
    Date of Patent: August 22, 2006
    Assignee: ProMOS Technologies Inc.
    Inventors: Hsi-Chieh Chen, James Shyu, Hippo Wu
  • Publication number: 20050079680
    Abstract: A method of forming a trench capacitor is disclosed. After completion of the bottom electrode of the capacitor, a collar dielectric layer is directly formed on the sidewall of the deep trench using self-starved atomic layer chemical vapor deposition (self-starved ALCVD). Then, a high dielectric constant (high k) dielectric layer is formed overlying the collar dielectric and the bottom portion of the deep trench using atomic layer chemical vapor deposition (ALCVD). Thereafter, a conductive layer is filled into the deep trench and recessed to a predetermined depth. A portion of the dielectric layer and the high dielectric constant (high k) layer at the top of the deep trench are removed to complete the fabrication of the deep trench capacitor.
    Type: Application
    Filed: October 13, 2004
    Publication date: April 14, 2005
    Inventors: Hsi-Chieh Chen, James Shyu, Hippo Wu
  • Publication number: 20040069409
    Abstract: A front opening unified pod (FOUP) with a dust-proof device that is set up beside a station for processing 12-inch wafers. The FOUP door opener opens up to allow wafers going to or from the FOUP while preventing external dust particles from diffusing into the station. The FOUP door opener includes an inner door and an outer door. The dust-proofing device is set up close to the FOUP door opener next to a nitrogen load-lock area inside the station. The dust-proofing device has a gas pump for pumping gases, a gas filter connected to the gas outlet port of the gas pump for removing dust particles, a gas outflow unit connected to the gas outlet port of the gas filter for blowing a layer of laminar gas and a gas inflow unit connected to the gas inlet port of the gas pump so that gas blown out from the gas outflow unit is returned to the gas pump via the gas inflow unit. The FOUP door opener prevents dust particles from contaminating the loading area of the furnace while using very little nitrogen.
    Type: Application
    Filed: October 11, 2002
    Publication date: April 15, 2004
    Inventors: Hippo Wu, James Shyu