Abstract: A polycrystalline bulk body of this invention has uniformity in superconducting properties, in comparison to a polycrystalline bulk body including crystal grains each constituted by (Ba1-xKx)Fe2As2. A polycrystalline bulk body (1) of this invention includes crystal grains each constituted by an iron-based compound (10) expressed by chemical formula AA?Fe4As4, where A is Ca and A? is K, the iron-based compound (10) having a crystal structure in which AFe2As2 layers (16) and A?Fe2As2 layers (17) are alternately stacked.

Abstract: The present invention provides an oxide-base scintillator single crystal having an extremely large energy of light emission, adoptable to X-ray CT and radioactive ray transmission inspection apparatus, and more specifically to provide a Pr-containing, garnet-type oxide single crystal, a Pr-containing perovskite-type oxide single crystal, and a Pr-containing silicate oxide single crystal allowing detection therefrom light emission supposedly ascribable to 5d-4f transition of Pr.

Abstract: The present invention provides an oxide-base scintillator single crystal having an extremely large energy of light emission, adoptable to X-ray CT and radioactive ray transmission inspection apparatus, and more specifically to provide a Pr-containing, garnet-type oxide single crystal, a Pr-containing perovskite-type oxide single crystal, and a Pr-containing silicate oxide single crystal allowing detection therefrom light emission supposedly ascribable to 5d-4f transition of Pr.

Abstract: To find out a crystalline material for a high speed scintillator in place of BaF2 and the like, and a method for producing the material at a low cost. A single crystal of (Zn1?xMx)O1+x (M: Al, Ga, In, Y, Sc, La, Gd, Lu) (x=0 to 0.0500), (Zn1?xM?x)O1+2x(M?: Si, Ge, Sn, Pb)(x=0 to 0.0250) or (Zn1?xCdx)O (x=0 to 0.0500) is used as a scintillator. Defects of a ZnO single crystal can be reduced by using a platinum inner cylinder in order for a solution not to directly contact with an autoclave, for reducing impurities in the ZnO single crystal and precluding impurities interfering with scintillation, and by using LiOH and KOH as a mineralizer. ZnO can be doped with Al2O3, Ga2O3, In2O3, Si, Cd or the like by adding those materials to a starting material for the hydrothermal synthesis. The doping amounts can be controlled by changing charging amounts thereof.