Abstract: A conductive line structure (in an integrated circuit (IC)) includes: in a first layer of metallization (M_first layer), M_first segments extending in a first direction and being aligned to M_first routing tracks, the M_first segments including first and second ones thereof; and in a second layer of metallization (M_second layer) over the M_first layer, M_second segments extending in a second direction perpendicular to the first direction and being aligned to M_second routing tracks, the M_second segments including first and second ones thereof correspondingly overlapping the first and second M_first segments; and the first and second M_first segments being aligned to different first and second ones of the M_first routing tracks; and relative to the first direction, the first and second M_first segments being separated by a first gap having a size substantially equal to or greater than a minimum permissible offset between co-track aligned M_first segments.

Abstract: A method of forming an integrated circuit device includes forming first segments extending in a first direction in a first conductive layer; forming second segments extending in the first direction in the first conductive layer, the forming the first and second segments including: interspersing the first and second segments relative to a second direction perpendicular to the first direction such that: the first segments are symmetrically spaced apart relative to each other, the second segments are symmetrically spaced apart relative to each other, and ones of the second segments are substantially asymmetrically spaced between corresponding adjacent ones of the first segments.

Abstract: A method (of generating a revised layout diagram of a conductive line structure for an IC) including: for a first set of pillar patterns that represents portions of an M(i) layer of metallization and where i is a non-negative number, the first set including first and second pillar patterns which extend in a first direction, are non-overlapping of each other with respect to the first direction, are aligned with each other and have a first distance of separation, determining a first distance of separation as between corresponding immediately adjacent members of the first set; recognizing that the first distance is less than a transverse routing (TVR) separation threshold for an M(i+j) layer of metallization, where j is an integer and j?2; and increasing the first distance so as to become a second distance which is greater than the TVR separation threshold of the M(i+j) layer.

Abstract: A conductive line structure includes: first and second offset sets of long pillars that are substantially coaxial on an intra-set basis; a third set of offset short pillars, the short pillars being: overlapping of long pillars in the first and second sets; and organized into groups of first quantities of the short pillars; each of the groups being overlapping of and electrically coupled between a pair of one of the long pillars in the first set and a one of the long pillars in the second set such that, in each of the groups, each short pillar being overlapping of and electrically coupled between the pair; and each long pillar in each of the first and second sets being overlapped by a second quantity of short pillars in the third set and being electrically coupled to same; and the first quantity being less than the second quantity.

Abstract: A method executed at least partially by a processor includes determining a power parameter associated with a cell in an integrated circuit (IC) layout diagram. In response to the determined power parameter exceeding a design criterion, the method further includes performing a modification of the IC layout diagram, the modification including at least one of altering a placement of the cell in the IC layout diagram or modifying a power delivery path to the cell. The determining the power parameter is performed before a routing operation in the IC layout diagram.

Abstract: A method (of fabricating a power grid (PG) arrangement in a semiconductor) includes: forming a first layer including conductive lines (C_1st lines) which include interspersed alpha C_1st lines and beta C_1st lines designated correspondingly for first and second reference voltages; and forming a second layer over the first layer, the second layer including segments (C_2nd segments) which include interspersed alpha C_2nd segments and beta C_2nd segments designated correspondingly for the first and second reference voltages; and, relative to the first direction, each beta C_2nd segment being substantially asymmetrically between corresponding adjacent ones of the alpha C_2nd segments.

Abstract: A method of manufacturing a semiconductor device includes forming a set of cells; forming a PG layer, including forming a first metallization layer including forming first conductor portions and second conductor portions, corresponding ones of the first conductor portions being arranged in first pairs; corresponding ones of the second conductor portions being arranged in second pairs; the cells being arranged to overlap at least one of the first and second conductor portions of the first metallization layer relative to the first direction; and forming a second metallization layer over the first metallization layer, the second metallization layer including forming third conductor portions and fourth conductor portions, the cells being arranged in a repeating relationship that each cell overlaps, an intersection of a corresponding one of the first or second pairs with at least a corresponding one of the third conductor portions or a corresponding one of the fourth conductor portions.

Abstract: An integrated circuit includes a cell layer including a first cell and a second cell, a first metal layer over the cell layer and having a first conductive feature, a second metal layer over the first metal layer and having a second conductive feature, and a first via between the first metal layer and the second metal layer and connecting the first conductive feature to the second conductive feature. The first conductive feature spans over a boundary between the first and second cells, and has a lengthwise direction along a first direction. The second conductive feature spans over the boundary between the first and second cells, and has a lengthwise direction along a second direction that is perpendicular to the first direction.

Abstract: A method (of fabricating a power grid (PG) arrangement in a semiconductor) includes: forming a first layer including conductive lines (C_1st lines)which include interspersed alpha C_1st lines and beta C_1st lines designated correspondingly for first and second reference voltages; and forming a second layer over the first layer, the second layer including segments (C_2nd segments) which include interspersed alpha C_2nd segments and beta C_2nd segments designated correspondingly for the first and second reference voltages; and, relative to the first direction, each beta C_2nd segment being substantially asymmetrically between corresponding adjacent ones of the alpha C_2nd segments.

Abstract: A method of forming an IC structure includes forming first and second power rails at a power rail level. First metal segments are formed at a first metal level above the power rail level. Each first metal segment of the plurality of first metal segments overlap one or both of the first power rail or the second power rail. First vias are formed between the power rail level and the first metal level. Second metal segments are formed at a second metal level above the first metal level. At least one second metal segment of the plurality of second metal segments overlaps the first power rail. At least one second metal segment of the plurality of second metal segments overlaps the second power rail. A plurality of second vias are formed between the first metal level and the second metal level.

Abstract: A system includes a processor configured to determine a power parameter associated with a cell in an integrated circuit (IC) layout diagram. In response to the determined power parameter exceeding a design criterion, the processor is configured to perform a modification of the IC layout diagram, the modification including at least one of altering a placement of the cell in the IC layout diagram or modifying a power delivery path to the cell. The power parameter includes at least one of a power density of a tile containing the cell, a voltage drop of the tile containing the cell, or a voltage drop of the cell.

Abstract: A method (of generating a revised layout diagram of a conductive line structure for an IC) including: for a first set of pillar patterns that represents portions of an M(i) layer of metallization and where i is a non-negative number, the first set including first and second pillar patterns which extend in a first direction, are non-overlapping of each other with respect to the first direction, are aligned with each other and have a first distance of separation, determining a first distance of separation as between corresponding immediately adjacent members of the first set; recognizing that the first distance is less than a transverse routing (TVR) separation threshold for an M(i+j) layer of metallization, where j is an integer and j?2; and increasing the first distance so as to become a second distance which is greater than the TVR separation threshold of the M(i+j) layer.

Abstract: A method (of revising an initial layout diagram of a wire routing arrangement, the initial layout diagram and versions thereof being stored on a non-transitory computer-readable medium) includes identifying, in a first conductance layer of the initial layout diagram, a routed pattern and a dummy pattern, each of which extends in a first direction and revising to form a revised layout diagram. The routed patterns are functional in a representation of a circuit and the dummy patterns are non-functional in the representation of the circuit. The revising includes connecting first ends of the corresponding routed and dummy patterns and connecting second ends of the corresponding routed and dummy patterns.

Abstract: Power grid of an integrated circuit (IC) is provided. A plurality of first power lines are formed in a first metal layer. A plurality of second power lines are formed in the first metal layer and parallel to the first power lines, and the first and second power lines are interlaced in the first metal layer. A plurality of third power lines formed in a second metal layer, and the third power lines are perpendicular to the first power lines. A plurality of fourth power lines are formed in the second metal layer and parallel to the third power lines, and the third and fourth power lines are interlaced in the second metal layer. Distances from each of the third power lines to two adjacent fourth power lines are different, and distances from each of the fourth power lines to two adjacent third power lines are the same.

Abstract: A method includes forming a cell layer including first and second cells, each of which is configured to perform a circuit function; forming a first metal layer above the cell layer and including a first conductive feature and a second conductive feature extending along a first direction, in which the first conductive feature extends from the first cell into the second cell, and in which a shortest distance between a center line of the first conductive feature and a center line of the second conductive feature along a second direction is less than a width of the first conductive feature, and the second direction is perpendicular to the first direction; forming a first conductive via interconnecting the cell layer and the conductive feature.

Abstract: A method (of fabricating a power grid (PG) arrangement in a semiconductor) includes: forming a first conductive layer including segments which are conductive, including forming first segments designated for a first reference voltage and second segments designated for a second reference voltage, and interspersing the first and second segments; relative to a first direction; and forming a second conductive layer over the first conductive layer, the second conductive layer including segments that are conductive, including forming third segments designated for the first reference voltage and fourth segments designated for the second reference voltage, interspersing the third and fourth segments relative to a second direction, the second direction being perpendicular to the first direction, and arranging the segments in the second conductive layer substantially asymmetrically including, relative to the first direction, locating each fourth segment substantially asymmetrically between corresponding adjacent ones of

Abstract: A semiconductor structure includes a power grid layer (including a first metallization layer) and a set of cells. The first metallization layer includes: conductive first and second portions which provide correspondingly a power-supply voltage and a reference voltage, and which have corresponding long axes oriented substantially parallel to a first direction; and conductive third and fourth portions which provide correspondingly the power-supply voltage and the reference voltage, and which have corresponding long axes oriented substantially parallel to a second direction substantially perpendicular to the first direction. The set of cells is located below the PG layer. Each cell is monostate cell which lacks an input signal and has a single output state. The cells are arranged to overlap at least one of the first and second portions in a repeating relationship with respect to at least one of the first or second portions of the first metallization layer.

Abstract: A power grid of an integrated circuit (IC) is provided. The power grid includes a plurality of first power lines formed in a first metal layer, a plurality of second power lines formed in the first metal layer, a plurality of third power lines formed in a second metal layer and a plurality of fourth power lines formed in the second metal layer. The second power lines are parallel to the first power lines, and the first and second power lines are interlaced in the first metal layer. The third power lines are perpendicular to the first power lines. The fourth power lines are parallel to the third power lines, and the third and fourth power lines are interlaced in the second metal layer. A first power pitch between two adjacent third power lines is greater than a second power pitch between two adjacent fourth power lines.

Abstract: A method of a layout diagram (of a conductive line structure for an IC) including: for a first set of pillar patterns included in an initial layout diagram that represents portions of an M(i) layer of metallization and where i is a non-negative number, the first set including first and second pillar patterns which are non-overlapping of each other, which have long axes that are substantially collinear with a reference line, and which have a first distance of separation, determining a first distance of separation as between corresponding immediately adjacent members of the first set; recognizing that the first distance is less than a transverse routing (TVR) separation threshold for an M(i+j) layer of metallization, where j is an integer and j?2; and increasing the first distance so as to become a second distance which is greater than the TVR separation threshold of the M(i+j) layer.

Abstract: A method includes determining a cell loading of a cell in an integrated circuit (IC) layout diagram. Based on the determined cell loading, a power parameter associated with the cell is determined. In response to the determined power parameter exceeding a design criterion, at least one of altering a placement of the cell in the IC layout diagram or modifying a power delivery path to the cell is performed. At least one of the determining the cell loading, the determining the power parameter, the altering the placement of the cell, or the modifying the power delivery path is executed by a processor.