Abstract: A solder composition of the invention contains solder powders and a flux composition. The flux composition contains (A) a resin and (B) an activator. The (B) component contains (B1) an organic acid, and (B2) a pyridine compound represented by a formula (1) below. A chlorine concentration is 900 mass ppm or less, a bromine concentration is 900 mass ppm or less, an iodine concentration is 900 mass ppm or less and a total halogen concentration is 1500 mass ppm or less in the solder composition. In the formula (1), X1, X2 and X3 are the same or different, each of X1, X2 and X3 representing a hydrogen atom, a hydroxyl group, a methyl group, an ethyl group or a propyl group, and all of X1, X2 and X3 are not simultaneously hydrogen atoms.

Abstract: A solder composition of the invention contains solder powders and a flux composition. The flux composition contains (A) a resin and (B) an activator. The (B) component contains (B1) an organic acid, and (B2) a pyridine compound represented by a formula (1) below. A chlorine concentration is 900 mass ppm or less, a bromine concentration is 900 mass ppm or less, an iodine concentration is 900 mass ppm or less and a total halogen concentration is 1500 mass ppm or less in the solder composition. In the formula (1), X1, X2 and X3 are the same or different, each of X1, X2 and X3 representing a hydrogen atom, a hydroxyl group, a methyl group, an ethyl group or a propyl group, and all of X1, X2 and X3 are not simultaneously hydrogen atoms.

Abstract: A perovskite oxide film is formed on a substrate, in which the perovskite oxide film has an average film thickness of not less than 5 ?m and includes a perovskite oxide represented by a general formula (P) given below: (K1-w-x,Aw,Bx)(Nb1-y-z,Cy,Dz)O3??(P), where: 0<w<1.0, 0?x?0.2, 0?y<1.0, 0?z?0.2, 0<w+x<1.0, A is an A-site element having an ionic valence of 1 other than K, B is an A-site element, C is a B-site element having an ionic valence of 5, D is a B-site element, each of A to D is one kind or a plurality of kinds of metal elements.

Abstract: A perovskite oxide film is formed on a substrate, in which the perovskite oxide film has an average film thickness of not less than 5 ?m and includes a perovskite oxide represented by a general formula (P) given below: (K1?w?x, Aw, Bx)(Nb1?y?z, Cy, Dz)O3 - - - (P), where: 0<w<1.0, 0?x?0.2, 0?y<1.0, 0?z?0.2, 0<w+x<1.0, A is an A-site element having an ionic valence of 1 other than K, B is an A-site element, C is a B-site element having an ionic valence of 5, D is a B-site element, each of A to D is one kind or a plurality of kinds of metal elements.